BLF872 UHF power LDMOS transistor Rev. 01 — 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features ■ Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: ◆ Peak envelope power load power PL(PEP) = 300 W ◆ Gain Gp = 15 dB ◆ Drain efficiency ηD = 43 % ◆ Third order intermodulation distortion IMD3 = −28 dBc ■ Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: ◆ Average output power PL(AV) = 70 W ◆ Gain Gp = 15 dB ◆ Drain efficiency ηD = 30 % ◆ Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center frequency) ■ Advanced flange material for optimum thermal behavior and reliability ■ Excellent ruggedness ■ High power gain ■ Designed for broadband operation (UHF band) ■ Excellent reliability ■ Internal input and output matching for high gain and optimum broadband operation ■ Source on underside eliminates DC isolators, reducing common-mode inductance ■ Easy power control BLF872 Philips Semiconductors UHF power LDMOS transistor 1.3 Applications ■ Communication transmitter applications in the UHF band ■ Industrial applications in the UHF band 1.4 Quick reference data Table 1: Quick reference data Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source narrowband 860 MHz test circuit. [1] f (MHz) CW, class AB 860 300 - - 14 55 - 2-tone, class AB f1 = 860; f2 = 860.1 - 300 - 15 42 −28 PAL BG 860 (ch69) 300 (peak sync.) [2] - - 15 42 - DVB-T (8K OFDM) 858 - 70 15 30 −28 [3] [1] PL (W) PL(PEP) PL(AV) (W) (W) ηD (%) Mode of operation - Gp (dB) IMD3 (dBc) Th is the heatsink temperature. [2] Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %. [3] Measured dBc at 4.3 MHz from center frequency. 2. Pinning information Table 2: Pinning Description Pin drain 1 1 drain 2 2 gate 1 3 gate 2 4 source 5 [1] Simplified outline 1 2 5 [1] 3 4 Connected to flange. 3. Ordering information Table 3: Ordering information Type number BLF872 Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; 4 SOT800-1 leads BLF872_1 Product data sheet Version © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 2 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage - ±13 V Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Typ Unit 0.32 K/W 0.4 K/W 5. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to case Th = 25 °C [1] thermal resistance from junction to heatsink Th = 25 °C [1] [2] Rth(j-c) Rth(j-h) [1] Th is the heatsink temperature. [2] Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device. 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified. Conditions [1] Min Typ Max Unit drain-source breakdown voltage VGS = 0 V; ID = 5 mA 65 - - V gate-source threshold voltage VDS = 20 V; ID = 250 mA 5.2 - 6.2 V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 2.2 µA IDSX drain cut-off current VGS = VGSth + 6 V; VDS = 10 V - 41 - A Symbol Parameter V(BR)DSS VGSth IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 40 nA gfs forward transconductance VGS = 20 V; ID = 16 A - 10 - S RDSon drain-source on-state resistance VGS = VGSth + 6 V; ID = 9 A input capacitance Ciss - 80 - mΩ VGS = 0 V; VDS = 32 V; f = 1 MHz [2] - 200 - pF - 70 - pF - 2.5 - pF Coss output capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz [2] Crss reverse transfer capacitance VGS = 0 V; VDS = 32 V; f = 1 MHz [2] [1] ID is the drain current. [2] Capacitance values without internal matching. BLF872_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 3 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor 001aad743 200 Coss (pF) 150 100 50 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance Coss as a function of drain-source voltage VDS; typical values per section; capacitance value without internal matching 7. Application information Table 7: RF performance in a common-source 860 MHz narrowband test circuit Th = 25 °C unless otherwise specified. [1] Mode of operation f VDS IDq PL(PEP) PL(AV) Gp ηD IMD3 ∆Gp (MHz) (V) (A) (W) (W) (dB) (%) (dBc) (dB) 2-tone, class AB f1 = 860; f2 = 860.1 32 2 × 0.9 300 - > 14 > 40 ≤ −25 ≤1 DVB-T (8K OFDM) 858 32 2 × 0.9 - 70 > 14 > 26 ≤ −25 - [1] Sync. compression: input sync. ≥ 33 %, output sync. 27 %. BLF872_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 4 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor 001aad744 16 Gp Gp (dB) 60 ηD, ηadd (%) ηD 14 40 ηadd 12 20 0 400 10 0 100 200 300 PL (W) VDS = 32 V; f = 860 MHz; IDq = 2 × 0.9 A; Th = 25 °C. Fig 2. CW power gain Gp, drain efficiency ηD and power added efficiency ηadd as a function of output power PL; typical values 001aad745 16 Gp (dB) IMD (dBc) Gp −20 14 001aad746 16 0 Gp (dB) ηD −40 12 −60 200 250 PL(AV) (W) 10 IMD5 10 0 50 100 150 VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz; IDq = 2 × 0.9 A; Th = 25 °C. 20 0 50 100 150 0 200 250 PL(AV) (W) VDS = 32 V; f1 = 860 MHz; f2 = 860.1 MHz; IDq = 2 × 0.9 A; Th = 25 °C. Fig 3. 2-tone power gain Gp and intermodulation distortion IMD as a function of average output power PL(AV); typical values Fig 4. 2-tone power gain Gp, drain efficiency ηD and power added efficiency ηadd as a function of average output power PL(AV); typical values BLF872_1 Product data sheet 40 ηadd IMD3 12 ηD, ηadd (%) Gp 14 60 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 5 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor 001aad748 20 0 IMD (dBc) Gp (dB) 16 Gp 001aad747 20 50 ηD, ηadd (%) Gp (dB) −10 16 −20 12 40 Gp ηadd 12 30 IMD3HI ηD −30 8 20 −40 4 10 −50 120 160 PL(AV) (W) 0 8 IMD3LO 4 0 0 40 80 IMD at ±4.3 MHz from frequency center. 0 80 0 120 160 PL(AV) (W) VDS = 32 V; f = 858 MHz; IDq = 2 × 0.9 A; Th = 25 °C. Fig 5. DVB-T (8K OFDM) power gain Gp and third order intermodulation distortion (high-frequency component IMD3HI and low-frequency component IMD3LO) as a function of average output power PL(AV); typical values Fig 6. DVB-T (8K OFDM) power gain Gp, drain efficiency ηD and power added efficiency ηadd as a function of average output power PL(AV); typical values BLF872_1 Product data sheet 40 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 6 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor 7.1 Broadband operation data Measured in a common-source broadband (470 MHz to 860 MHz) test circuit. 001aad749 300 P (W) 001aad750 20 80 ηD (%) Gp (dB) Po(sync)M Gp 15 60 200 ηD 10 40 5 20 PL(AV) 100 0 400 500 600 700 800 900 f (MHz) 0 400 500 600 700 0 800 900 f (MHz) VDS = 32 V; IDq = 2 × 0.9 A; Th = 25 °C. VDS = 32 V; IDq = 2 × 0.9 A; Th = 25 °C. Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %. Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %. Fig 7. Analog TV (black video signal) peak sync output power Po(sync)M and average output power PL(AV) as a function of frequency f Fig 8. Analog TV (black video signal) power gain Gp and drain efficiency ηD as a function of frequency f 7.2 Ruggedness in class-AB operation The BLF872 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated power. Measured in a common-source broadband (470 MHz to 860 MHz) test circuit. BLF872_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 7 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor 7.3 Reliability 001aad751 107 Years 106 (1) (2) (3) (4) (5) (6) 105 104 103 102 (7) (8) (9) (10) (11) 10 0 4 8 12 16 20 ID (A) TTF; 0.1 % failure fraction; best estimate values. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 9. BLF872 electromigration (ID, total device) 8. Test information Table 8: List of components For test circuit, see Figure 10, 11 and 12. Component Description Value B1, B2 balun semi rigid coax 25 Ω Remarks EZ90-25-TP C1 multilayer ceramic chip capacitor 12 pF [1] C2 multilayer ceramic chip capacitor 10 pF [1] C3, C5 multilayer ceramic chip capacitor 5.6 pF [1] C4 multilayer ceramic chip capacitor 6.8 pF [1] C6, C7 multilayer ceramic chip capacitor 2.0 pF [2] C8 multilayer ceramic chip capacitor 18 pF [1] C9, C10 multilayer ceramic chip capacitor 0.5 pF [2] C11, C12 multilayer ceramic chip capacitor 100 pF [1] C13, C14 multilayer ceramic chip capacitor 100 pF [2] BLF872_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 8 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor Table 8: List of components …continued For test circuit, see Figure 10, 11 and 12. Component Description Value C15, C16 ceramic capacitor 15 nF C17, C18 electrolytic capacitor 470 µF C20 multilayer ceramic chip capacitor 13 pF C21 tekelec trimmer 0.6 pF to 4.5 pF C22 multilayer ceramic chip capacitor 3.9 pF [3] C23 multilayer ceramic chip capacitor 10 pF [3] C24, C32 multilayer ceramic chip capacitor 3.0 pF [3] C25 multilayer ceramic chip capacitor 30 pF [3] C26, C27 multilayer ceramic chip capacitor 100 pF [3] C28, C29 ceramic capacitor 15 nF C30, C31 electrolytic capacitor 10 µF L1 stripline [4] (W × L) 24 mm × 13.1 mm stripline [4] (W × L) 10 mm × 17.7 mm stripline [4] (W × L) 5 mm × 16.5 mm L4 stripline [4] (W × L) 2.4 mm × 15 mm L5 stripline [4] (W × L) 3.5 mm × 43 mm stripline [4] (W × L) 2 mm × 43.3 mm stripline [4] (W × L) 24 mm × 10 mm L11 stripline [4] (W × L) 10 mm × 15 mm L12 stripline [4] (W × L) 3 mm × 31.5 mm L13 stripline [4] (W × L) 2 mm × 43.3 mm R1 resistor 5.6 Ω R2 resistor 5.6 Ω R3 resistor 100 Ω R4 resistor 100 Ω R5 potentiometer 2 kΩ R6 potentiometer 2 kΩ L2 L3 L6 L10 Remarks [3] [1] American technical ceramics type 180R or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. [4] PCB: Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. BLF872_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 9 of 16 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx L5 Philips Semiconductors BLF872_1 Product data sheet +VG1(test) C9 C30 R5 L1 L10 C13 C15 C17 R3 Rev. 01 — 20 February 2006 C28 R1 50 Ω +VD1(test) L2 L11 C24 C26 C11 C6 L3 L12 L13 L6 C25 L13 R2 C27 C22 C21 C20 C1 C2 C3 C4 50 Ω C8 L4 C23 B2 B1 C5 L6 L12 C32 L3 C29 C7 C12 +VD2(test) L11 L2 C14 R4 L10 C16 C18 L1 R6 C31 C10 L5 BLF872 Fig 10. Class-AB common-source broadband test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages 001aad752 UHF power LDMOS transistor 10 of 16 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. +VG2(test) xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Philips Semiconductors BLF872_1 Product data sheet Rev. 01 — 20 February 2006 80 mm 95 mm 95 mm 001aad753 BLF872 UHF power LDMOS transistor 11 of 16 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Fig 11. Printed-circuit board for class-AB broadband test circuit xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx Philips Semiconductors BLF872_1 Product data sheet 32 mm + C30 +VG1(test) +VD1(test) L5 C9 15 mm C15 R5 C13 C17 L10 C28 L1 + R3 13.1 mm L6 strip (+32 V supply) R1 B2 L13 L2 Rev. 01 — 20 February 2006 L11 L3 L12 C26 C23 C24 C25 C20 C22 C11 C6 C5 L4 C8 BLF872 C32 C27 C3 C4 C1 C21 C7 C12 C2 L12 L3 C29 3.5 mm L2 1.5 mm broadband BLF872 input R2 R4 L6 L10 L1 15 mm + +VG2(test) C10 L5 C16 +VD2(test) 32 mm 001aad833 BLF872 UHF power LDMOS transistor 12 of 16 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Fig 12. Component layout for class-AB broadband test circuit C18 C14 R6 C31 B1 + 10 mm L13 L11 BLF872 Philips Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT800-1 D A F y D1 U1 B q C 1 c w1 M A 2 H U2 M B M E P E1 5 L 3 4 A b w2 M C Q M e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 e F H L p Q q U1 U2 w1 w2 y mm 6.6 6.2 10.55 10.45 0.15 0.10 30.5 29.9 31.1 30.9 14.6 14.4 15.3 15.1 12.7 2.26 2.00 22.8 21.8 3.7 3.3 3.56 3.49 3.4 3.1 38.5 44.5 44.2 15.4 15.0 0.25 0.25 0.05 0.260 0.415 0.006 1.201 1.224 0.575 0.602 0.244 0.411 0.004 1.177 1.216 0.567 0.594 0.5 0.089 0.898 0.146 0.140 0.134 1.752 0.606 1.516 0.079 0.858 0.130 0.137 0.122 1.740 0.591 0.01 0.01 0.002 inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-06-02 05-06-07 SOT800-1 Fig 13. Package outline SOT800-1 BLF872_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 13 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 9: Abbreviations Acronym Description CDMA Code Division Multiple Access CW Continuous Wave DVB Digital Video Broadcast EDGE Enhanced Data rates for GSM Evolution ESR Equivalent Series Resistance EVM Error Vector Magnitude GSM Global System for Mobile communications IMD InterModulation Distortion LDMOS Laterally Diffused Metal Oxide Semiconductor OFDM Orthogonal Frequency Division Multiplexing PCB Printed-Circuit Board PEP Peak Envelope Power RF Radio Frequency SMD Surface Mount Device TTF Time To Failure VSWR Voltage Standing Wave Ratio 11. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BLF872_1 20060220 Product data sheet - - - BLF872_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 14 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BLF872_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 20 February 2006 15 of 16 BLF872 Philips Semiconductors UHF power LDMOS transistor 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 7.1 7.2 7.3 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Broadband operation data . . . . . . . . . . . . . . . . 7 Ruggedness in class-AB operation. . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 February 2006 Document number: BLF872_1 Published in The Netherlands