Document No.001-89529 Rev. ** ECN # 4145424 Cypress Semiconductor Product Qualification Report QTP# I000005 October 2013 0.35um Technology, CSM Fab 2 CY7B9950 2.5V / 3.3V, 200MHz High Speed MultiPhase PLL Clock Buffer CY2DP818* 3.3V, 1:8 Clock Fanout Buffer CY28346 3.3V, Clock Synthesizer with Differential CPU Out- put CY29946 CY29947 CY29948 2.5V / 3.3V, 200MHz, 1:9,1:10, 1:12 Clock Distribution Buffer CY29972 CY29973 3.3V, 125MHz Multi-Output Zero Delay Buffer CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 9 Document No.001-89529 Rev. ** ECN # 4145424 PRODUCT QUALIFICATION HISTORY Qual Report I000005 Description of Qualification Purpose 3.3V, 125MHz Multi-Output Zero Delay Buffer, CY29972AIT is a member of the G35C base wafer product, 0.35um Technology, Chartered Semiconductor Singapore, Fab 2 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 9 Date Comp 2000 Document No.001-89529 Rev. ** ECN # 4145424 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify G35C Die Marketing Part #: Various Device Description: 3.45V, Commercial, available in various packages Cypress Division: Cypress Semiconductor Corporation – Timing Technology Division (TTD-IMI) Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. A Die Size (stepping): 80 mils x 93 mils What ID markings on DIE G35C TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 3 Metal Composition: Metal 1,2: 100Å IMPTi/300Å TiN/.5KAlCu/350Å Tin ARC Metal 3: 300Å IMPTi /300Å TiN/.8K AlCu/350Å TiN ARC Passivation Type and Materials: 350Å TiN/2K PSG/7K Si3N4 Free Phosphorus contents in top glass layer(%): Number of Transistors in Device: 0% 8,000 Number of Gates in Device 2225 Generic Process Technology/Design Rule (µ-drawn): CMOS, Triple Metal /0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 65Å Name/Location of Die Fab (prime) Facility: Chartered Semiconductor Singapore Die Fab Line ID/Wafer Process ID: 2L313-698-CBB/CRA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 9 Document No.001-89529 Rev. ** ECN # 4145424 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: N/A TQFP N/A V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Solder Plated 85% Sn, 15% Pb Die Backside Preparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: N/A Die Attach Material: N/A Die Attach Method: Epoxy Bond Diagram Designation: N/A Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 94.2°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: N/A Name/Location of Assembly (prime) facility: Signetics (Korea) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 9 Document No.001-89529 Rev. ** ECN # 4145424 DIE QUALIFICATION TEST RESULTS CY28346 was used to qualified G35C base die platform (0.35 um, 3 layers metal, CMOS, CSM-Singapore) Test Military or Industry Conditions Test Test Results Comments Standard Points Life Test MIL-STD-883 500 0/116 125oC/3.6V Method 1005 1000 0/116 Life Test MIL-STD-883 o 500 0/116 125 C/3.6V Method 1005 1000 0/116 Life Test MIL-STD-883 o 500 0/116 125 C/3.6V Method 1005 1000 0/116 ESD MIL-STD-883 HBM 2000V 0/3 Method 3015 3000V 0/3 4000V 0/3 Latch-up JESD78 200 mA 0/5 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 9 Document No.001-89529 Rev. ** ECN # 4145424 PACKAGE QUALIFICATION TEST RESULTS TQFP Test Military or Industry Standard MIL-STD-883 Method 1010 Conditions Test Points 500 Test Results Pressure Pot JEDEC Std. 22 Test Method 102 168 Hours, 100% RH, 121oC, 2 atm 168 0/76 Temperature Cycle MIL-STD-883 Method 1010 500 cycles, -65/+ 150oC 500 0/76 Pressure Pot JEDEC Std. 22 Test Method 102 168 Hours, 100% RH, 121oC, 2 atm 168 0/76 Temperature Cycle MIL-STD-883 Method 1010 500 cycles, -65/+ 150oC 500 0/45 Pressure Pot JEDEC Std. 22 Test Method 102 168 Hours, 100% RH, 121oC, 2 atm 168 0/45 Physical Dimension Resistance to Solvent Solderability JEDEC Spec. Applicable drawing N/A 0/12 N/A 0/12 N/A 0/5 N/A N/A 0/20 0/12 N/A 0/12 N/A 0/5 N/A 0/20 Temperature Cycle Coplanarity Physical Dimension Resistance to Solvent Solderability Coplanarity MIL-STD-883 Method 2015 MIL-STD-883 Method 2003 JEDEC Spec. JEDEC Spec. MIL-STD-883 Method 2015 MIL-STD-883 Method 2003 JEDEC Spec. 500 cycles, -65/+ 150oC 260 Deg, 5 sec 95% Min Covrg Max = 4 Mil Applicable drawing 260 Deg, 5 sec 95% Min Covrg Max = 4 Mil Comments 0/76 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 9 Document No.001-89529 Rev. ** ECN # 4145424 Package: SSOP Test Military or Industry Standard MIL-STD-883 Method 1010 Conditions Test Points 500 Test Results Temperature Cycle MIL-STD-883 Method 1010 500 cycles, -65/+ 150oC 500 0/77 Temperature Cycle MIL-STD-883 Method 1010 500 cycles, -65/+ 150oC 500 0/77 Pressure Pot JEDEC Std. 22 Test Method 102 168 Hours, 100% RH, 121oC, 2 atm 168 0/76 Pressure Pot JEDEC Std. 22 Test Method 102 168 Hours, 100% RH, 121oC, 2 atm 168 0/77 Pressure Pot JEDEC Std. 22 Test Method 102 168 Hours, 100% RH, 121oC, 2 atm 168 0/76 Temperature Cycle 500 cycles, -65/+ 150oC Comments 0/76 Note: “MSL-1” indicates samples were preconditioned to MSL-1 moisture level prior to package qualification stress tests Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 9 Document No.001-89529 Rev. ** ECN # 4145424 Package: TSSOP Test Conditions Temperature Cycle Military or Industry Standard MIL-STD-883 Method 1010 Test Points 500 Test Results Temperature Cycle MIL-STD-883 Method 1010 500 cycles, -65/+ 150oC 500 0/45 Pressure Pot JEDEC Std. 22 Test Method 102 168 Hours, 100% RH, 121oC, 2 atm 168 0/76 Pressure Pot JEDEC Std. 22 Test Method 102 168 Hours, 100% RH, 121oC, 2 atm 168 0/45 500 cycles, -65/+ 150oC Comments 0/76 Note: “MSL-1” indicates samples were preconditioned to MSL-1 moisture level prior to package qualification stress tests Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 9 Document No.001-89529 Rev. ** ECN # 4145424 Document History Page Document Title: QTP#I000005:125MHZ MULTI-OUTPUT ZERO DELAY BUFFER "CY29972AIT" 0.35UM TECHNOLOGY, CSM FAB 2 Document Number: 001-89529 Rev. ECN Orig. of No. Change ** 4145424 HSTO Description of Change Initial Spec Release Qualification report published on Cypress.com and was transferred to qualification report spec template. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 9