DZ3S068D Silicon epitaxial planar type Unit: mm For surge absorption circuit Features Excellent rising characteristics of zener current IZ Low zener operating resistance RZ Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 02 Packaging DZ3S068D0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Total power dissipation *1 PT 150 mW Electrostatic discharge *2 ESD ±10 kV Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C 1: Cathode-1 2: Cathode-2 3: Anode-1, 2 Panasonic JEITA Code SSMini3-F3-B SC-89 SOT-490 3 Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) (2 Diode total) Solder in ( 0.6 mm × 0.6 mm) *2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times) 1 2 Common Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit 1.0 V 7.14 V Forward voltage VF IF = 10 mA Zener voltage *1, 2 VZ IZ = 5 mA Zener operating resistance RZ IZ = 5 mA 30 W Zener rise operating resistance RZK IZ = 0.5 mA 60 W 0.1 µA Reverse current IR VR = 4 V Temparature coefficient of zener voltage *3 SZ IZ = 5 mA 6.46 3.1 mV/°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C) * 2: VZ guaranteed 20 ms after current flow. *3: Tj = 25°C to 150°C Publication date: July 2012 Ver. CED 1 DZ3S068D DZ3S068D_IF-VF 103 IZ VZ 102 Ta = 25°C 10 1 Reverse current IR (mA) Zener current IZ (mA) 1 10−7 10−1 10−2 10−3 10−9 10−2 0 0.5 1.0 1.5 2.0 10−3 0 4 Forward voltage VF (V) 102 1 −1 0 2 4 50 0 0 40 80 120 6 8 20 10 0 10 0 160 Ambient temperature Ta (°C) 200 2 3 4 Reverse voltage VR (V) DZ3S__Rth-t DZ3S__PZSM-tW (1) (2) Rth(j-l) = 70°C/W 10 (1) Non-heat sink (2) Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) Solder in : 0.6 mm × 0.6 mm 10−1 10 Time t (s) Ver. CED 5 PZSM tW 102 1 10−3 1 Zener current IZ (mA) 103 Thermal resistance Rth (°C/W) 100 6 30 Rth t 150 5 Ct VR 3 PT Ta 200 4 Ta = 25°C DZ3S__ PT-Ta Mounted on glass epoxy print board. (2 diode total) (45 mm × 45 mm × 1 mm) Solder in : 0.6 mm × 0.6 mm 3 40 5 −3 2 DZ3S068D_Ct-VR Terminal capacitance Ct (pF) Temparature coefficient of zener voltage SZ (mV/°C) Zener operating resistance RZ (Ω) 10 1 Reverse voltage VR (V) 7 Zener current IZ (mA) 250 0 SZ IZ Ta = 25°C 1 10−11 DZ3S068D_SZ-IZ RZ IZ 1 10−1 12 Zener voltage VZ (V) DZ3S068D_RZ-IZ 10 8 103 Non-repetitive reverse surge power dissipation PZSM (W) Forward current IF (mA) Ta = 25°C Ta = 25°C 10 10−1 Total power dissipation PT (mW) IR VR 10−5 102 2 DZ3S068D_IR-VR DZ3S068D_IZ-VZ IF VF 102 Ta = 25°C 10 1 10−1 2 10 103 Pulse width tW (µs) 104 DZ3S068D SSMini3-F3-B Unit: mm +0.05 1.60 −0.03 +0.05 0.375 ±0.05 0.26 −0.02 (5°) 1.60 ±0.05 0.85 −0.03 +0.05 3 1 2 (0.50) +0.05 0.13 −0.02 (0.50) (0.45) 1.00 ±0.05 0 to 0.10 0.70 −0.03 +0.05 (5°) Land Pattern (Reference) (Unit: mm) Ver. CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202