isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4765 DESCRIPTION ·High Breakdown Voltage: VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for medium resolution display. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous ±5 A ICP Collector Current-Pulse ±10 A IB Base Current- Continuous 2.5 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4765 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1.0A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 1.0A 1.5 V ICBO Collector Cutoff Current VCB= 1700V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 66 200 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 3.5A ; VCE= 5V VECF C-E Diode Forward Voltage IF= 3.5A Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V Output Capacitance IE=0 ; VCB=10V;ftest=1.0MHz fT COB 5 UNIT V 3.5 7.5 2.0 1 V 3 MHz 250 pF Switching times ;Resistive load tstg Storage Time 3.0 μs 0.2 μs IC= 3.5A , IB1= 0.7A ; IB2= -1.4A RL= 56Ω tf Fall Time isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SC4765