MICROWAVE POWER GaAs FET TIM3742-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB SYMBOL CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 41.5 42.5 dB 9.5 10.5 A 4.4 5.0 Compression Point Power Gain at 1dB G1dB Compression Point VDS= 10V f = 3.7 to 4.2GHz Drain Current IDS1 Gain Flatness ∆G dB ±0.6 Power Added Efficiency ηadd % 37 3rd Order Intermodulation IM3 dBc -44 -47 Distortion Two-Tone Test Po= 31.5dBm Drain Current IDS2 (Single Carrier Level) A 4.4 5.0 Channel Temperature Rise ∆Tch (VDS X IDS + Pin – P1dB) °C 80 UNIT mS MIN. V -1.0 -2.5 -4.0 A 10.5 V -5 °C/W 1.5 1.8 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200µA Rth(c-c) Channel to Case TYP. MAX. 3600 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM3742-16UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 14 Total Power Dissipation (Tc= 25 °C) PT W 83.3 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.7±0.15 2.5 MIN. Unit in mm 4 – C1.0 (1) (1) Gate (2) Source (2) 2.5 MIN. 2.6±0.3 (2) 17.4± 0.4 8.0±0.2 (3) Drain (3) 20.4±0.3 5.5 MAX. 2.4± 0.3 0.2 MAX. 16.4 MAX. 1.4± 0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM3742-16UL RF PERFORMANCE Output Power vs. Frequency 4 5 VDS= 10V IDS≅ 4.4A Pin= 32.0dBm 4 3 4 2 4 1 4 0 3 .5 3 .6 3 .7 3 .8 3 .9 4 4 .1 4 .2 4 .3 4 .4 Frequency (GHz) Output Power vs. Input Power 4 5 9 0 f= 3.95GHz VDS= 10V IDS≅ 4.4A 8 0 4 3 7 0 4 2 6 0 4 1 5 0 4 0 4 0 3 9 3 0 a dd (%) P o 3 8 2 0 η 4 4 P o (dBm ) P o (dB m ) 4 4 3 7 1 0 3 6 0 η 2 5 2 7 2 9 P in 3 1 (dB m ) 3 a dd 3 3 3 5 TIM3742-16UL Power Dissipation vs. Case Temperature 1 0 0 P T (W ) 8 0 6 0 4 0 2 0 0 0 4 0 8 0 1 2 0 T c (℃ 1 6 0 2 0 0 ) IM3 vs. Output Power Characteristics - 2 0 VDS= 10V IDS≅ 4.4A f= 3.95GHz ∆f= 5MHz I M 3 (dBc ) - 3 0 - 4 0 - 5 0 - 6 0 2 7 2 9 3 1 3 3 3 5 Po(dBm), Single Carrier Level 4 3 7