MICROWAVE POWER GaAs FET TIM5964-35SLA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Gain Compression Point P1dB Power Gain at 1dB Gain Compression Point G1dB Drain Current IDS1 Gain Flatness ( Ta= 25°C ) UNIT MIN. TYP. MAX. dBm 45.0 45.5 ⎯ dB 8.0 9.0 ⎯ A ⎯ 8.0 9.0 ΔG dB ⎯ ±0.8 Power Added Efficiency ηadd % 3rd Order Intermodulation Distortion IM3 Two-Tone Test Po=35.0dBm dBc ⎯ -42 ⎯ 39 -45 ⎯ Drain Current IDS2 (Single Carrier Level) A ⎯ 8.0 9.0 ΔTch (VDS X IDS + Pin – P1dB) °C ⎯ ⎯ 100 UNIT MIN. TYP. MAX. mS ⎯ 6500 ⎯ V -1.0 -2.5 -4.0 A ⎯ 20 ⎯ V -5 ⎯ ⎯ °C/W ⎯ 1.0 1.3 Channel Temperature Rise CONDITIONS VDS=10V f = 5.9 to 6.4GHz ⎯ X Rth(c-c) Recommended gate resistance(Rg) : Rg= 28 Ω(MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) ( Ta= 25°C ) CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420μA Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Oct. 2006 TIM5964-35SLA ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25 °C) PT W 115.4 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2 TIM5964-35SLA RF PERFORMANCE Output Power vs. Frequency 47 Po(dBm) 46 VDS= 10 V IDS≅ 8 A Pin= 36.5 dBm 45 44 43 42 5.9 6.0 6.1 6.2 6.3 6.4 Frequency (GHz) Output Power vs. Input Power 90 70 Po(dBm) 46 Po 50 44 42 30 ηadd 10 40 30 32 34 36 Pin(dBm) 3 38 40 ηadd(%) 48 f=6.15 GHz VDS= 10 V IDS≅ 8 A TIM5964-35SLA Power Dissipation vs. Case Temperature 120 PT(W) 100 80 60 40 20 0 0 40 80 120 160 200 Tc(°C) IM3 vs. Output Power Characteristics -10 VDS=10V IDS≅ 8 A -20 freq.=6.15GHz Δf=5MHz IM3(dBc) -30 -40 -50 -60 30 32 34 36 Pout(dBm) @Single carrier level 4 38 40