SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High Speed Switching Applications Analog Switch Applications Low on-resistance Unit: mm Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V DC ID −100 Pulse IDP −200 PD (Note 1) 150 Drain power dissipation (Ta = 25°C) mA Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.585 mm ) 1 1 3 2 mW Channel temperature 0.80 ± 0.05 0.5 ± 0.05 Drain current 0.4 0.4 Rating 0.8 ± 0.05 Symbol 1.2 ± 0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics 1.2 ± 0.05 0.22 ± 0.05 : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) 0.32 ± 0.05 Optimum for high-density mounting in small packages • 0.13 ± 0.05 • 1.GATE VESM 2.SOURCE 3.DRAIN JEDEC ― JEITA ― TOSHIBA 2-1L1B Weight: 0.0015 g(typ.) 0.5mm 0.45mm 0.45mm 0.4mm Marking Equivalent Circuit (top view) 3 3 DQ 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3J15FV Electrical Characteristics (Ta = 25°C) Characteristic Symbol MIN. TYP. MAX. UNIT IGSS VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = −0.1 mA, VGS = 0 −30 ⎯ ⎯ V IDSS VDS = −30 V, VGS = 0 ⎯ ⎯ −1 μA Gate leakage current Drain-Source breakdown voltage Test Condition Drain cut-off current Vth VDS = −3 V, ID = −0.1 mA −1.1 ⎯ −1.7 V Forward transfer admittance ⎪Yfs⎪ VDS = −3 V, ID = −10 mA 20 ⎯ ⎯ mS Drain-Source on-resistance RDS (ON) ID = −10 mA, VGS = −4 V ⎯ 8 12 ID = −1 mA, VGS = −2.5 V ⎯ 14 32 ⎯ 9.1 ⎯ pF ⎯ 3.5 ⎯ pF ⎯ 8.6 ⎯ pF ⎯ 65 ⎯ ⎯ 175 ⎯ Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time Turn-on time ton Turn-off time toff VDS = −3 V, VGS = 0, f = 1 MHz VDD = −5 V, ID = −10 mA, VGS = 0~−5 V Ω ns Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 10% IN 50 Ω −5V 10 μs VDD 90% −5 V RL (c) VOUT VDD = −5 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration when using the device. 2 2007-11-01 SSM3J15FV ID - VGS ID - VDS -250 -1000 -7 -5 -150 -3.3 -100 -3.0 -2.7 -2.5 -50 Drain-Source on resistance RDS(ON) (Ω) 0 -0.5 -1 -1.5 Drain-Source Voltage VDS(V) Ta=100°C -10 25°C -1 -0.01 -2 0 Common Source Ta=25°C 30 20 VGS=-2.5V 10 -4V 0 -1 -1 -2 -3 -4 Gate-Source Voltage VGS(V) -10 -100 Drain Current ID(mA) -1000 20 18 Source Common ID= -1mA 16 14 12 Ta=100°C 10 25° 8 6 4 2 -25°C 0 0 -2 -4 -6 -8 Gate-Source Voltage VGS (V) RDS(ON) - Ta -10 Vth - Ta 30 -2 Common Source 20 Common Source ID=-0.1mA VDS=-3V -1.8 Gate threshold valtage Vth(V) Drain-Source on resistance RDS(ON) (Ω) -5 RDS(ON) - VGS RDS(ON) - ID 40 -25°C -0.1 VGS=-2.3V 0 Common Source VDS=-3V -100 -4 Drain-Source on resistance RDS(ON) (Ω) Drain Current ID(mA) -200 -10 Drain Current ID(mA) Common Source Ta=25°C VGS=-2.5V,ID=-1mA 10 -4V,-10mA -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 -25 0 25 50 75 100 125 0 150 -25 Ambient temperature Ta(°C) 0 25 50 75 100 125 150 Ambient temperature Ta(°C) 3 2007-11-01 SSM3J15FV |Yfs| - ID IDR - VDS -250 Common Source VDS= -3V Ta=25°C Drain reveres current IDR (mA) Forword transfer admittance |Yfs| (mS) 1000 100 10 1 -200 -150 -100 -50 0 -1 -10 -100 Drain current ID (mA) -1000 0 C - VDS 0.2 0.4 0.6 0.8 1 1.2 Drain-Source voltage VDS (V) Switching Time t (ns) Common Source VGS=0V f=1MHz Ta=25°C 10 Ciss Coss toff 1000 100 1.4 t - ID 10000 100 Capacitance C (pF) Common Source VGS=0V Ta=25°C Common Source VDD= -5V VGS=0~-5V Ta=25°C tf ton tr Crss 1 -0.1 -1 -10 Drain-Source voltage VDS (V) -100 10 -0.1 -1 -10 Drain Current ID (mA) -100 PD - Ta Drain power dissipation Pd (mW) 250 mounted on FR4 board (25.4mm×25.4mm×1.6t Cu Pad:0.585mm2) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta(°C) 4 2007-11-01 SSM3J15FV RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01