MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications · The electrodes are isolated from case. · Enhancement-mode · Thermal output terminal (TH) Unit: mm Equivalent Circuit TH1 Ｃ1 TH2 G1 Fo1 E1 E1/C2 G2 JEDEC ― JEITA ― TOSHIBA Fo2 2-126A1A Weight: 680 g (typ.) E2 E2 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V Collector current DC IC 800 A Forward current DC IF 800 A Collector power dissipation (Tc = 25°C) PC 2900 W Junction temperature Tj 150 °C Storage temperature range Tstg -40~125 °C Isolation voltage VIsol 2500 (AC 1 min) V Terminal: M8 ¾ 10 N･m Mounting: M5 ¾ 3 N･m Screw torque 1 2002-10-31 MG800J2YS50A Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate Leakage current IGES VGE = ±20 V, VCE = 0 V ¾ ¾ ±10 mA Collector cut-off current ICES VCE = 600 V, VGE = 0 V ¾ ¾ 1 mA Gate-emitter cut-off voltage VGE (off) IC = 800 mA, VCE = 5 V ¾ 6.5 ¾ V Collector-emitter saturation voltage VCE (sat) IC = 800 A, VGE = 15 V Tj = 25°C ¾ 2.4 3.0 Tj = 125°C ¾ 2.6 3.3 ¾ 93000 ¾ pF VCE = 10 V, VGE = 0 V, f = 1 MHz V Input capacitance Cies Gate-emitter voltage VGE ¾ 13 15 17 V Gate resistance RG ¾ 4.7 ¾ 15 W ¾ 0.3 ¾ ¾ 0.25 ¾ ¾ 0.55 ¾ ¾ 0.85 ¾ ¾ 0.15 0.30 ¾ 1.05 ¾ Tj = 25°C ¾ 2.3 3.0 Tj = 125°C ¾ 2.1 ¾ td (on) tr ton Switching time td (off) Inductive load VCC = 300 V IC = 800 A VGE = ±15 V RG = 4.7 W (Note) tf toff ms Forward voltage VF IF = 800A, VGE = 0V Reverse recovery time trr IF = 800 A, VGE = -10 V di/dt = 2000 A/ms ¾ ¾ 0.5 Transistor stage ¾ ¾ 0.043 Diode stage ¾ ¾ 0.056 1600 ¾ ¾ A Min Typ. Max Unit Tc = 25°C ¾ 100 ¾ kW Tc = 25°C/Tc = 85°C ¾ 4390 ¾ K 2500 ¾ ¾ Vrms Thermal resistance Rth (j-c) RTC Operating current Irtc Tj = 25°C V ms C/W Thermistor Characteristics Symbol Zero power resistance R25 B value R25/85 Test Condition Tc = 25°C Isolation voltage Note: Switching time measurement circuit and input/output waveforms VGE 90% RG IF IC RG 10% 0 -VGE trr VCC L IC 90% 90% VCE 10% 0 td (off) tf toff 2 10% td (on) tr ton 2002-10-31 MG800J2YS50A IC – VCE IC – VCE 1800 Common emitter 20 15 12 1600 Tj = 25°C (A) 1400 IC 1200 1000 Collector current Collector current IC (A) 1600 1800 10 800 600 400 9 200 1 2 3 Collector-emitter voltage 4 VCE 1200 10 1000 800 9 600 400 VGE = 8 V (V) 1 3 4 VCE 5 (V) VCE – VGE 12 (V) Common emitter VCE Tj = 25°C 8 Collector-emitter voltage (V) VCE 2 Collector-emitter voltage VCE – VGE Collector-emitter voltage 12 1400 0 0 5 12 10 15 20 Tj = 125°C 200 VGE = 8 V 0 0 Common emitter 6 4 1600 800 2 IC = 400 A 0 0 4 8 12 16 Gate-emitter voltage VGE Common emitter 10 8 6 (V) 1600 4 800 2 IC = 400 A 0 0 20 Tj = 125°C 4 8 12 Gate-emitter voltage VGE 16 20 (V) IC – VGE 1800 Collector current IC (A) 1600 Common emitter VCE = 5 V 1400 1200 1000 Tj = 125°C 25 800 600 400 200 0 0 2 4 6 8 10 Gate-emitter voltage VGE 12 14 16 (V) 3 2002-10-31 MG800J2YS50A IF – VF VCE, VGE – QG 700 600 Collector-emitter voltage VCE Forward current IF (A) 800 Tj = 25°C 125 500 400 300 200 Common cathode 100 0 0 VGE = 0 V 0.5 1 1.5 2.5 2 3 Forward voltage VF 3.5 4 350 14 VCE = 0 300 12 300 250 200 6 Common emitter RL = 0.375 W Tj = 25°C 100 50 4 2 1000 2000 Charge Switching time – RG 0 4000 3000 QG (nC) Switching time – RG 10000 Tj = 25°C Tj = 125°C (mJ) Common emitter VCC = 300 V 5000 VGE = ±15 V IC = 800 A 3000 Switching time loss (ms) 8 200 150 (V) 10000 Switching time 10 100 0 0 5 4.5 16 (V) (V) 400 Gate-emitter voltage VGE 900 toff ton 1000 td (off) 500 td (on) 300 tr Common emitter VCC = 300 V 5000 VGE = ±15 V IC = 800 A 3000 Tj = 25°C Tj = 125°C Eon Eoff 1000 500 300 tf 100 2 4 6 8 10 Gate resistance RG 12 14 100 2 16 (9) 4 6 8 10 Gate resistance RG 4 12 14 16 (9) 2002-10-31 MG800J2YS50A Switching time – IC Switching loss – IC 10000 100 Eoff (mJ) toff 1000 td (on) ton Switching time loss Switching time (ms) 50 td (on) tr 100 10 0 tf Common emitter VCC = 300 V VGE = ±15 V RG = 4.7 W 100 200 300 400 500 Collector current Tj = 25°C Tj = 125°C 600 IC 700 800 30 10 5 Common emitter VCC = 300 V VGE = ±15 V RG = 4.7 W 3 1 0 900 Eon (A) 100 200 300 trr, Irr – IF 600 IC 700 800 900 (A) Edsw – IF 1000 Common cathode 100 Reverse recovery loss Edsw (mJ) trr Irr (A) (ns) Peak reverse recovery current Reverse recovery time trr 500 Collector current 1000 Irr 10 Common cathode di/dt = 2000 A/ms VGE = ±15 V VCC = 300 V 1 0 400 Tj = 25°C Tj = 125°C 200 400 Forward current Tj = 25°C VGE = -10 V VCC = 300 V Tj = 25°C Tj = 125°C 100 10 Tj = 125°C 600 IF di/dt = 2000 A/ms 1 0 800 (A) 200 400 Forward current 5 600 IF 800 (A) 2002-10-31 MG800J2YS50A Rth (t) – tw C – VCE 1000000 1 Tc = 25°C 100000 (pF) Capacitance C 0.1 Ciss Diode stage Transistor stage 10000 0.01 Coss 1000 100 0 Common emitter VGE = 0 f = 1 MHz Tj = 25°C 1 0.001 0.001 Crss 0.01 0.1 Pulse width 10 Collector-emitter voltage 100 VCE 600 800 (s) 1000 Reverse bias SOA Scsoa (A) 10000 1000 IC 1000 Collector current IC (A) 10 (V) 10000 Collector current tw 1 100 10 Tj < = 125°C 100 10 VGE = ±15 V 1 0 RG = 4.7 W 200 400 Collector-emitter voltage 600 VCE 1 0 800 (V) Common emitter VCC = 300 V Tj < = 125°C tw = 10 ms 200 400 Collector-emitter voltage 6 VCE (V) 2002-10-31 MG800J2YS50A RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-10-31