TOSHIBA TLP131

TLP131
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP131
Unit in mm
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP131 is a small outline coupler,
suitable for surface mount assembly.
TLP131 consists of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode.
•
Collector−emitter voltage: 80V (min.)
•
Current transfer ratio: 50% (min.)
•
Isolation voltage: 3750Vrms (min.)
•
UL recognized: UL1577, file No. E67349
Rank GB: 100% (min.)
TLP131 base terminal is for the improvement of speed, reduction of dark
current, and enable operation.
TOSHIBA
11−4C2
Weight: 0.09 g
Pin Configurations (top view)
1
6
5
3
4
1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base
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2007-10-01
TLP131
Current Transfer Ratio
Type
TLP131
Classification
Current Transfer
Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Marking Of Classification
Min.
Max.
(None)
50
600
BLANK, Y, Y , G, G , B, B , GB
Rank Y
50
150
Y, Y
Rank GR
100
300
G, G
Rank GB
100
600
G, G , B, B , GB
■
■
■
■
■
■
■
Note: Application type name for certiffication test,please use standard product type name,i.e.
TLP131(GB): TLP131
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
ΔIF / °C
−0.7
mA / °C
Peak forward current (100μs pulse,100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
VCEO
80
V
Collector−base voltage
VCBO
80
V
Emitter−collector voltage
VECO
7
V
Emitter−base voltage
VEBO
7
V
Collector current
IC
50
mA
Peak collector current (10ms pulse,100pps)
ICP
100
mA
Power dissipation
PC
150
mW
ΔPC / °C
−1.5
mW / °C
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−55~100
°C
Lead soldering temperature (10s)
Tsol
260
°C
Total package power dissipation
PT
200
mW
ΔPT / °C
−2.0
mW / °C
BVS
3750
Vrms
Forward current
LED
Forward current derating (Ta≥53°C)
Detector
Collector−emitter voltage
Power dissipation derationg (Ta ≥ 25°C)
Junction temperature
Total package power dissipation derating (Ta ≥ 25°C)
Isolation voltage (AC, 1min., RH≤ 60%)
(Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
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2007-10-01
TLP131
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
―
5
48
V
Forward current
IF
―
16
25
mA
Collector current
IC
―
1
10
mA
Topr
−25
―
85
°C
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
―
―
10
μA
Capacitance
CT
V = 0, f = 1 MHz
―
30
―
pF
Collector−emitter
breakdown voltage
V(BR)CEO
IC = 0.5mA
80
―
―
V
Emitter−collector
breakdown voltage
V(BR)ECO
IE = 0.1mA
7
―
―
V
Collector−base breakdown voltage
V(BR)CBO
IC = 0.1mA
80
―
―
V
Emitter−base breakdown voltage
V(BR)EBO
IE = 0.1mA
7
―
―
V
VCE = 48V
―
10
100
nA
VCE = 48V,Ta = 85°C
―
2
50
μA
collector dark current
ICEO
Collector dark current
ICER
VCE = 48V,Ta = 85°C
RBE = 1MΩ
―
0.5
10
μA
Collector dark current
ICBO
VCB = 10V
―
0.1
―
nA
DC forward current gain
hFE
VCE = 5V,IC = 0.5mA
―
400
―
―
Capacitance (collector to emitter)
CCE
V = 0, f = 1MHz
―
10
―
pF
Min.
Typ.
Max.
Unit
50
―
600
100
―
600
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo−current
Collector−emitter
saturation voltage
Off−state collector current
Symbol
Test Condition
IC / IF
IF = 5 mA, VCE = 5 V
Rank GB
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
―
60
―
30
―
―
IF = 5mA,VCB = 5V
―
10
―
IPB
VCE (sat)
IC (off)
IC = 2.4 mA, IF = 8 mA
―
―
0.4
IC = 0.2 mA, IF = 1 mA
Rank GB
―
0.2
―
―
―
0.4
IF = 0.7mA, VCE = 48 V
―
1
10
3
%
%
μA
V
μA
2007-10-01
TLP131
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Capacitance (input to output)
CS
Isolation resistance
Test Condition
VS = 0, f = 1 MHz
RS
VS = 500 V
BVS
Typ.
Max.
Unit
―
0.8
―
pF
―
Ω
10
5×10
AC, 1 minute
Isolation voltage
Min.
10
14
3750
―
―
AC, 1 second, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
Vdc
Min.
Typ.
Max.
Unit
―
2
―
―
3
―
―
3
―
―
3
―
―
2
―
―
25
―
―
40
―
―
2
―
―
20
―
―
30
―
Vrms
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Rise time
tr
Fall time
tf
Turn−on time
ton
Turn−off time
toff
Turn−on time
tON
Storage time
ts
Turn−off time
tOFF
Turn−on time
tON
Storage time
ts
Turn−off time
tOFF
Test Condition
VCC = 10 V, IC = 2 mA
RL = 100Ω
RL = 1.9 kΩ%)
RBE = OPEN
VCC = 5 V, IF = 16 mA
(Fig.1)
RL = 1.9 kΩ%)
RBE = 220 kΩ
VCC = 5 V, IF = 16 mA
(Fig.1)
μs
μs
μs
Fig. 1 Switching time test circuit
IF
VCC
IF
tS
RL
RBE
VCE
VCE
VCC
4.5V
0.5V
tON
4
tOFF
2007-10-01
TLP131
IF – Ta
PC – Ta
200
Allowable collector power
dissipation PC (mW)
Allowable forward current
IF (mA)
100
80
60
40
20
0
−20
0
40
20
60
100
80
Ambient temperature
Ta
160
120
80
40
0
−20
120
0
40
20
Ambient temperature
(°C)
IFP – DR
Pulse width ≦ 100μs
(mA)
500
IF
300
Forward current
Pulse forward current
IFP (mA)
1000
100
50
30
10
−3
3
10
−2
3
10
Duty cycle ratio
−1
3
10
0
DR
30
10
5
3
1
0.5
0.3
0.1
0.6
0.8
1.0
ΔVF / ΔTa – IF
1.2
1.4
VF
1.6
1.8
2.6
3.0
(V)
IFP – VFP
−3.2
−2.8
(mA)
−2.4
IFP
1000
−2.0
Pulse forward current
Forward voltage temperature coefficient
ΔVF / ΔTa (mV / °C)
(°C)
Ta = 25°C
Forward voltage
−1.6
−1.2
−0.8
−0.4
0.1
Ta
120
50
Ta = 25°C
10
3
100
80
IF – V F
100
3000
60
0.3 0.5
1
3
Forward current
5
10
30
500
300
100
50
30
10
Pulse width ≦ 10μs
5
Repetitive
3
Frequency = 100Hz
Ta = 25°C
1
50
1.0
IF (mA)
1.4
1.8
Pulse forward voltage
5
2.2
VFP
(V)
2007-10-01
TLP131
IC – VCE
IC – VCE
30
Ta = 25°C
Ta = 25°C
IF = 50mA
(mA)
50mA
40
IC
30mA
20mA
15mA
40mA
30mA
20
30
Collector current
Collector current
IC
(mA)
50
10mA
PC(MAX.)
20
IF = 5mA
10
0
0
2
6
4
8
Collector–emitter voltage
20mA
10mA
5mA
10
2mA
0
0
10
0.2
IC / IF (%)
Ta = 25°C
SAMPLE A
Current transfer ratio
IC (mA)
Collector current
5
10
3
SAMPLE B
1
VCE = 10V
0.5
VCE = 5V
0.3
VCE = 0.4V
0.1
0.3
0.5
1
3
5
10
Forward current
30
IF
50
VCE = 10V
Ta = 25°C
VCE = 0.4V
500
300
SAMPLE A
100
SAMPLE B
50
0.5
1
3
30
(μs)
10
IPB
30
Base photo current
100
5
3
VCC
IF
A
1
50kΩ
0.3 0.5
100kΩ
1
RBE
(mA)
IC
Collector current
Ta = 25°C
50 VCE = 5V
0.1
0.1
3
5
Forward current
10
30
50
100
IF (mA)
IPB – IF
300
RBE = ∞ 500kΩ
5
Forward current
(mA)
IC – IF at RBE
0.3
VCE (V)
VCE = 5V
0.3
100
100
0.5
1.0
IC / IF – IF
1000
50
30
0.8
Collector–emitter voltage
VCE (V)
I C – IF
100
0.6
0.4
10
30
50
10
IF (mA)
VCB
IF
VCB = 0V
VCB = 5V
A
3
1
0.3
0.1
0.1
100
Ta = 25°C
0.3 0.5
1
3
Forward current
6
5
10
30
50 100
IF (mA)
2007-10-01
TLP131
ICEO – Ta
VCE(sat) – Ta
101
0.24
IF = 5mA
Ic = 1mA
Collector–emitter saturation
voltage VCE(sat) (V)
0.20
Collector dark current ICEO (μA)
100
VCE = 48V
24V
10V
10−1
5V
0.16
0.12
0.08
0.04
10−2
0
−40
−20
20
0
40
60
80
100
Ambient temperature Ta (℃)
10−3
10−4
0
20
60
40
100
80
120
Ambient temperature Ta (℃)
IC – Ta
100
Switching Time – RL
VCE = 5V
50
Ta = 25℃
IF = 16mA
VCC = 5V
RBE = 220kΩ
300
IF = 25mA
30
10mA
100
5
Switching time (μs)
(mA)
10
Collector current IC
5mA
3
1mA
1
50
tOFF
30
ts
10
5
0.5
0.5mA
3
0.3
tON
0.1
-20
0
20
40
60
80
1
1
100
3
5
10
30
50
100
Load resistance RL (kΩ)
Ambient temperature Ta (℃)
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2007-10-01
TLP131
Switching Time – RBE
1000
Ta = 25℃
IF = 16mA
VCC = 5V
RL = 1.9kΩ
500
300
300
100
100
tOFF
50
ts
30
Ta = 25°C
IF = 16mA
500 VCC = 5V
Switching time (μs)
Switching time (μs)
Switching Time – RL
1000
ts
50
30
10
10
5
5
3
tOFF
3
tON
1
100k
300k
1M
tON
3M
1
1
∞
Base-emitter resistance RBE (Ω)
3
5
10
Load resistance RL
8
30
50
100
(Ω)
2007-10-01
TLP131
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01