SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications • Low on-resistance Q1: Ron = 395mΩ (max) (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 12 V DC ID 0.5 Pulse IDP 1.5 A Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±8 V DC ID -0.5 Pulse IDP -1.5 Drain current Drain power dissipation A UF6 Symbol Rating Unit PD 500 mW (Note 1) Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: 6 2 5 3 4 Unit Absolute Maximum Ratings(Q1,Q2 Common)(Ta = 25°C) Characteristics 1 0.7±0.05 Drain current 0.65 0.65 Symbol 2.0±0.1 Characteristics 1.3±0.1 Q1 Absolute Maximum Ratings (Ta = 25°C) +0.1 0.3-0.05 Optimum for high-density mounting in small packages +0.06 0.16-0.05 • 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight: 7.0 mg (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 Equivalent Circuit (top view) 5 4 6 5 4 Q1 K7 Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6L10TU Q1 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Min Typ. Max Unit VGS = ±12V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = −12 V 10 ⎯ ⎯ Gate leakage current IGSS Drain-Source breakdown voltage Drain cut-off current Forward transfer admittance Drain-Source on-resistance V VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.1 V ⏐Yfs⏐ VDS = 3 V, ID = 0.25 A (Note2) 1.2 2.4 ⎯ S ID = 0.25 A, VGS = 4.0 V (Note2) ⎯ 125 145 ID = 0.25 A, VGS = 2.5 V (Note2) ⎯ 150 190 ID = 0.25 A, VGS = 1.8 V (Note2) ⎯ 200 395 IDSS Gate threshold voltage Test Condition RDS (ON) mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 268 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 34 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 44 ⎯ pF Switching time Note2: Turn-on time ton VDD = 10 V, ID = 0.25 A, ⎯ 11 ⎯ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 Ω ⎯ 15 ⎯ ns Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN RG 10 μs RL 0V 0 VDD (c) VOUT VDD = 10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% VDD VDS (ON) 10% 90% tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) 2 2007-11-01 SSM6L10TU Q2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Max Unit μA ⎯ ⎯ ±1 V (BR) DSS ID = -1 mA, VGS = 0 -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = +8 V -12 ⎯ ⎯ IDSS VDS = -20 V, VGS = 0 ⎯ ⎯ -1 μA ⎯ -1.1 V (Note3) 0.8 1.7 ⎯ S ID = -0.25 A, VGS = -4 V (Note3) ⎯ 200 230 ID = -0.25 A, VGS = -2.5 V (Note3) ⎯ 260 330 ID = -0.25 A, VGS = -1.8 V (Note3) ⎯ 400 980 VDS = -3 V, ID = -0.1 mA ⏐Yfs⏐ VDS = -3 V, ID = -0.25 A RDS (ON) V -0.5 Vth Gate threshold voltage Drain-Source on-resistance Typ. VGS = ±8 V, VDS = 0 Drain cut-off current Forward transfer admittance Min IGSS Gate leakage current Drain-Source breakdown voltage Test Condition mΩ Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ⎯ 250 ⎯ pF Reverse transfer capacitance Crss VDS = -10 V, VGS = 0, f = 1 MHz ⎯ 35 ⎯ pF Output capacitance Coss VDS = -10 V, VGS = 0, f = 1 MHz ⎯ 45 ⎯ pF Switching time Note3: Turn-on time ton VDD = -10 V, ID = -0.25 A, ⎯ 14 ⎯ Turn-off time toff VGS = 0~-2.5 V, RG = 4.7 Ω ⎯ 15 ⎯ ns Pulse test Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 10% IN RG −2.5V 10 μs VDD 90% −2.5 V RL (c) VOUT VDD = -10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) . 3 2007-11-01 SSM6L10TU Q1(Nch MOS FET) ID - VGS ID - VDS 1600 10000 1.8 1.6 1000 1200 2.0 3.0 4.0 5.0 1000 800 Drain current ID (mA) Drain current ID (mA) 1400 VGS=1.4V 600 400 100 Ta=100°C 10 -25°C 0.1 Common Source Ta=25°C 200 25°C 1 Common Source VDS=3V 0.01 0 0 0.2 0.4 0.6 0.8 1 0 1 2 Gate-Source voltage VGS (V) Drain-Source voltage VDS (V) Drain-Source on resistance RDS(ON) (mΩ) 160 2.5V 140 120 VGS=4V 100 80 60 40 Common Source Ta=25°C 20 0 0 400 350 200 200 150 300 250 200 25°C 150 Ta=100°C 100 -25°C 50 0 400 600 800 1000 1200 1400 1600 Drain current ID (mA) 0 RDS(ON) - Ta 1 2 3 4 5 6 7 8 9 Gate-Source voltage VGS (V) 1.8V 2.5V VGS=4V 100 10 Vth - Ta 1 Common Source ID=250mA 300 250 Common Source ID=250mA 350 Gate threshold voltage Vth(V) Drain-Source on resistance RDS(ON) (mΩ) 400 1.8V 180 Drain-Source on resistance RDS(ON) (mΩ) RDS(ON) - VGS RDS(ON) - ID 200 3 Common Source ID=0.1mA VDS=3V 0.8 0.6 0.4 0.2 50 0 -60 -40 -20 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2007-11-01 SSM6L10TU Q1(Nch MOS FET) |Yfs| - ID IDR - VDS 1600 Drain reverse current IDR (mA) Forward transfer admittance |Yfs| (S) 10 25°C -25°C 1 Ta=100°C Common Source VDS=3V Ta=25°C Common Source VGS=0V Ta=25°C 1400 1200 D 1000 G IDR 800 S 600 400 200 0 0 10 100 1000 10000 0 -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS (V) Drain current ID (mA) C - VDS Ciss 100 Common Source VGS=0V f=1MHz Ta=25°C t - ID 1000 Switching time t (ns) Capacitance C (pF) 1000 Coss -1 toff Common Source VDD=10V VGS=0~2.5V Ta=25°C 100 tf ton 10 tr Crss 1 10 0.1 1 10 Drain-Source voltage VDS (V) 10 100 5 100 1000 Drain current ID (mA) 10000 2007-11-01 SSM6L10TU Q2(Pch MOS FET) ID - VDS -1600 -2.0 - 1000 -1.8 -1200 Drain current ID (mA) Drain current ID (mA) -3.0 -5.0 -1400 ID - VGS -10000 -4.0 -1000 -1.6 -800 -600 VGS=-1.4V -400 -100 Ta=100°C - 10 -25°C - 0.1 Common Source Ta=25°C -200 25°C -1 Common Source VDS=-3V - 0.01 0 0 -0.2 -0.4 -0.6 -0.8 -1 0 -1 -2 Gate-Source voltage VGS (V) Drain-Source voltage VDS (V) -3 - 500 Common Source ID=-250mA 400 Drain-Source on resistance RDS(ON) (mΩ) Drain-Source on resistance RDS(ON) (mΩ) RDS(ON) - VGS RDS(ON) - ID 500 -1.8V 300 -2.5V 200 VGS=-4V 100 Common Source Ta=25°C 0 0 -200 -400 -600 -800 400 300 Ta=100°C 200 25°C -25°C 100 0 0 -1000 -1200 -1400 -1600 Drain current ID (mA) RDS(ON) - Ta Drain-Source on resistance RDS(ON) (mΩ) Common Source ID=-250mA -2 -3 -4 -5 -6 -7 -8 -9 -10 Gate-Source voltage VGS (V) -1 -1.8V Gate threshold voltage Vth(V) 500 -1 400 -2.5V 300 VGS=-4V 200 100 -0.8 Common Source ID=-0.1mA VDS=-3V -0.6 -0.4 -0.2 0 -60 -40 -20 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) Vth - Ta 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 6 2007-11-01 SSM6L10TU Q2(Pch MOS FET) |Yfs| - ID IDR - VDS 1600 Drain reverse current IDR (mA) Forward transfer admittance |Yfs| (S) 10 25°C -25°C 1 Ta=100°C Common Source VDS=-3V Ta=25°C 0 -10 Common Source VGS=0V Ta=25°C 1400 1200 1000 800 600 400 200 0 -100 -1000 -10000 0.0 0.2 Drain current ID (mA) C - VDS Ciss 100 Coss Common Source VGS=0V f=1MHz Ta=25°C toff -1 -10 Drain-Source voltage VDS (V) Common Source VDD=-10V VGS=0 ~-2.5V Ta=25°C 100 tf 10 ton tr Crss 10 -0 1.0 t - ID 1000 Switching time t (ns) Capacitance C (pF) 1000 0.4 0.6 0.8 Drain-Source voltage VDS (V) 1 -10 -100 -100 -1000 Drain current ID (mA) -10000 PD* - Ta Drain power dissipation PD* (mW) 1000 t=10s 800 600 mounted FR4 board (25.4mm*25.4mm*1.6t Cu Pad :645mm2) DC 400 200 0 0 20 *:Total Rating 40 60 80 100 120 140 Ambient temperature Ta( ℃) 160 7 2007-11-01 SSM6L10TU Transient thermal impedance rth (°C/W ) rth – tw 1000 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 10 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) 8 2007-11-01 SSM6L10TU 9 2007-11-01 SSM6L10TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-11-01