TOSHIBA SSM3K16FU

SSM3K16FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FU
High Speed Switching Applications
Analog Switching Applications
Unit: mm
·
Suitable for high-density mounting due to compact package
·
Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
±10
V
DC
ID
100
Pulse
IDP
200
Drain current
Drain power dissipation (Ta = 25°C)
PD (Note)
mA
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: Mounted on FR4 board
2
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm ´ 3)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
0.6 mm
1.0 mm
Marking
Equivalent Circuit
3
3
DS
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±10 V, VDS = 0
¾
¾
±1
mA
V (BR) DSS
ID = 0.1 mA, VGS = 0
20
¾
¾
V
IDSS
VDS = 20 V, VGS = 0
¾
¾
1
mA
Vth
VDS = 3 V, ID = 0.1 mA
0.6
¾
1.1
V
½Yfs½
VDS = 3 V, ID = 10 mA
40
¾
¾
mS
ID = 10 mA, VGS = 4 V
¾
1.5
3.0
ID = 10 mA, VGS = 2.5 V
¾
2.2
4.0
ID = 1 mA, VGS = 1.5 V
¾
5.2
15
RDS (ON)
W
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
¾
9.3
¾
pF
Reverse transfer capacitance
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
¾
4.5
¾
pF
Output capacitance
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
¾
9.8
¾
pF
VDD = 3 V, ID = 10 mA,
VGS = 0~2.5 V
¾
70
¾
¾
125
¾
Switching time
Turn-on time
ton
Turn-off time
toff
ns
Switching Time Test Circuit
(b) VIN
(a) Test circuit
2.5 V
OUT
2.5 V
90%
50 9
IN
0
10 ms
0V
RL
VDD
(c) VOUT
VDD = 3 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 W)
Common Source
Ta = 25°C
10%
VDD
10%
90%
VDS (ON)
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device. VGS recommended voltage of 1.5 V or higher to turn on
this product.
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ID – VDS
ID – VGS
250
1000
Common source
2.5
Common source
Ta = 25°C
VDS = 3 V
10
(mA)
2.3
2.1
ID
1.9
150
Drain current
Drain current
ID
(mA)
200
4 3
1.7
100
1.5
50
100
Ta = 100°C
10
25°C
-25°C
1
0.1
VGS = 1.3 V
0
0
0.5
1
1.5
Drain-Source voltage VDS
0.01
0
2
1
(V)
Gate-Source voltage
RDS (ON) – ID
12
2
VGS
RDS (ON) – VGS
Common source
Ta = 25°C
ID = 10 mA
5
Drain-Source on resistance
RDS (ON) (W)
Drain-Source on resistance
RDS (ON) (W)
10
8
VGS = 1.5 V
4
2.5 V
2
4
3
Ta = 100°C
2
25°C
1
-25°C
4V
0
1
10
100
Drain current
ID
0
0
1000
2
4
RDS (ON) – Ta
Gate threshold voltage Vth
Drain-Source on resistance
RDS (ON) (W)
(V)
Common source
VGS = 1.5 V, ID = 1 mA
4
2.5 V, 10 mA
0
-25
4 V, 10 mA
0
25
50
75
8
VGS
10
(V)
Vth – Ta
2
2
6
Gate-Source voltage
(mA)
8
6
(V)
6
Common source
6
3
100
125
1.6
1.2
0.8
0.4
0
-25
150
Ambient temperature Ta (°C)
Common source
ID = 0.1 mA
VDS = 3 V
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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ïYfsï – ID
IDR – VDS
250
(mA)
300 Common source
VDS = 3 V
Ta = 25°C
100
Drain reverse current IDR
Forward transfer admittance
ïYfsï (mS)
500
50
30
10
5
3
1
1
10
100
Drain current
ID
200
150
D
IDR
G
S
100
50
0
0
1000
Common source
VGS = 0 V
Ta = 25°C
-0.2
(mA)
-0.4
-0.6
-1
Drain-Source voltage VDS
-1.2
-1.4
(V)
t – ID
C – VDS
100
5000
Common source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
3000
50
30
(pF)
(ns)
toff
t
10
Ciss
Coss
5
Switching time
Capacitance C
-0.8
3
Crss
Common source
1 VGS = 0 V
f = 1 MHz
0.5 Ta = 25°C
0.3
0.1
1000
500
100
ton
50
30
0.3 0.5
1
3
5
10
30 50
Drain-Source voltage VDS
100
10
0.1
(V)
tf
300
tr
1
Drain current
10
ID
100
(mA)
PD – Ta
Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t
2
Cu Pad: 0.6 mm ´ 3)
200
Drain power dissipation
PD
(mW)
250
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
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RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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