SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications · Small package · Low on resistance · Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω (max) (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V) Q1 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V DC ID 400 Pulse IDP 800 Drain current mA Q2 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±12 V DC ID -200 Pulse IDP -400 Drain current JEDEC ― JEITA ― TOSHIBA 2-2J1C Weight: 6.8 mg (typ.) mA Maximum Ratings (Q1, Q2 common) (Ta = 25°C) Characteristics Symbol Rating Unit PD (Note1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Drain power dissipation (Ta = 25°C) Note1: Total rating, mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 6) 1 2002-01-17 SSM6L05FU Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Marking 6 Equivalent Circuit (top view) 5 4 6 2 4 Q1 K4 1 5 Q2 3 1 2 3 Q1 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current IGSS Drain-Source breakdown voltage Drain cut-off current V (BR) DSS IDSS Test Condition Min Typ. Max Unit VGS = ±12 V, VDS = 0 ¾ ¾ ±1 mA ID = 1 mA, VGS = 0 20 ¾ ¾ V VDS = 20 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 3 V, ID = 0.1 mA 0.6 ¾ 1.1 V Forward transfer admittance ïYfsï VDS = 3 V, ID = 200 mA (Note2) 350 ¾ ¾ mS Drain-Source ON resistance RDS (ON) ID = 200 mA, VGS = 4 V (Note2) ¾ 0.6 0.8 ID = 200 mA, VGS = 2.5 V (Note2) ¾ 0.85 1.2 ¾ 22 ¾ pF ¾ 9 ¾ pF ¾ 21 ¾ pF Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time VDS = 3 V, VGS = 0, f = 1 MHz Turn-on time ton VDD = 3 V, ID = 100 mA, ¾ 60 ¾ Turn-off time toff VGS = 0~2.5 V ¾ 70 ¾ W ns Note2: Pulse test Switching Time Test Circuit (Q1: Nch MOS FET) (a) Test circuit (b) VIN 2.5 V OUT 2.5 V 90% 50 9 IN 0 10 ms RL VDD 0V (c) VOUT VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C 10% VDD VDS (ON) 10% 90% tr ton 2 tf toff 2002-01-17 SSM6L05FU Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product. Q2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current IGSS Drain-Source breakdown voltage Drain cut-off current V (BR) DSS IDSS Test Condition Min Typ. Max Unit ¾ ¾ ±1 mA -20 ¾ ¾ V ¾ ¾ -1 mA -0.6 ¾ -1.1 V 100 ¾ ¾ mS ID = -100 mA, VGS = -4 V (Note2) ¾ 2.1 3.3 ID = -50 mA, VGS = -2.5 V (Note2) ¾ 3.2 4.0 ¾ 27 ¾ pF ¾ 7 ¾ pF ¾ 21 ¾ pF VGS = ±12 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -20 V, VGS = 0 Vth VDS = -3 V, ID = -0.1 mA Forward transfer admittance ïYfsï VDS = -3 V, ID = -50 mA Drain-Source ON resistance RDS (ON) Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time (Note2) VDS = -3 V, VGS = 0, f = 1 MHz Turn-on time ton VDD = -3 V, ID = -50 mA, ¾ 70 ¾ Turn-off time toff VGS = 0~-2.5 V ¾ 70 ¾ W ns Note2: Pulse test Switching Time Test Circuit (Q2: Pch MOS FET) (a) Test circuit (b) VIN 0V OUT 0 50 9 IN -2.5 V 10 ms 90% -2.5 V RL VDD 10% (c) VOUT VDD = -3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C VDS (ON) VDD 90% 10% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product. 3 2002-01-17 SSM6L05FU Q1 (Nch MOS FET) ID – VDS ID – VGS 1000 1000 Common Source 10 4 800 3 VDS = 3 V 100 2.1 400 1.9 Drain current 600 ID (mA) 2.3 (mA) ID Drain current Common Source Ta = 25°C 2.5 1.7 200 10 Ta = 100°C 1 25°C -25°C 0.1 VGS = 1.5 V 0 0 0.5 1.0 1.5 Drain-Source voltage VDS 0.01 0 2.0 0.5 (V) 1.0 1.5 2.0 Gate-Source voltage RDS (ON) – ID VGS 3.0 (V) RDS (ON) – VGS 2.0 2.0 Common Source Common Source Ta = 25°C ID = 200 mA 1.6 Drain-Source on resistance RDS (ON) (W) Drain-Source on resistance RDS (ON) (W) 2.5 1.2 2.5 V 0.8 VGS = 4 V 0.4 1.6 1.2 Ta = 100°C 0.8 25°C 0.4 -25°C 0 0 200 400 Drain current 600 ID 800 0 0 1000 2 (mA) 4 Gate-Source voltage RDS (ON) – Ta (mS) Common Source ïYfsï 2.5 V Forward transfer admittance Drain-Source on resistance RDS (ON) (W) ID = 200 mA 1.6 0.8 VGS = 4 V 0.4 0 -25 0 25 50 75 8 VGS 10 (V) ïYfsï – ID 2.0 1.2 6 100 125 150 Ambient temperature Ta (°C) 5000 Common Source 3000 VDS = 3 V Ta = 25°C 1000 500 300 100 10 30 50 100 Drain current 4 300 ID 500 1000 (mA) 2002-01-17 SSM6L05FU Q1 (Nch MOS FET) IDR – VDS C – VDS 100 1000 VGS = 0 Ta = 25°C 50 30 (pF) 800 D 600 G Capacitance C Drain reverse current IDR (mA) Common Source IDR S 400 Ciss 10 Coss 5 3 Common Source Crss VGS = 0 f = 1 MHz 200 Ta = 25°C 1 0.1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Drain-Source voltage VDS -1.2 0.3 1 3 Drain-Source voltage VDS -1.4 10 30 (V) (V) t – ID 1000 Common Source VDD = 3 V VGS = 0~2.5 V 300 toff Ta = 25°C Switching time t (ns) 500 100 50 tf ton 30 tr 10 1 3 10 Drain current 30 ID 100 300 (mA) 5 2002-01-17 SSM6L05FU Q2 (Pch MOS FET) ID – VDS ID – VGS -500 Common Source Ta = 25°C -4 -3 VDS = -3 V -100 (mA) -10 Common Source -2.5 ID -2.3 -300 -2.1 -200 Drain current ID (mA) -400 Drain current -1000 -1.9 -1.7 -100 -10 Ta = 100°C -1 25°C -25°C -0.1 VGS = -1.5 V 0 0 -0.5 -1.0 -1.5 Drain-Source voltage VDS -0.01 0 -2.0 -0.5 (V) -1.0 -2.0 Gate-Source voltage RDS (ON) – ID 6 -1.5 VGS -3.0 (V) RDS (ON) – VGS 6 Common Source Common Source Ta = 25°C ID = -50 mA 5 Drain-Source on resistance RDS (ON) (W) 5 Drain-Source on resistance RDS (ON) (W) -2.5 -2.5 V 4 3 VGS = -4 V 2 1 0 0 -100 -200 Drain current -300 ID -400 4 3 Ta = 100°C 2 25°C 1 -25°C 0 0 -500 -2 (mA) -4 -6 Gate-Source voltage -8 VGS -10 (V) RDS (ON) – Ta 6 ïYfsï – ID Common Source 1000 4 Forward transfer admittance ïYfsï (mS) Drain-Source on resistance RDS (ON) (W) 5 -2.5 V, -50 mA 3 2 VGS = -4 V, ID = -100 mA 1 0 -25 0 25 50 75 100 125 Common Source VDS = -3 V 500 Ta = 25°C 300 100 50 30 -10 150 Ambient temperature Ta (°C) -30 -50 -100 Drain current 6 -300 -500 ID -1000 (mA) 2002-01-17 SSM6L05FU Q2 (Pch MOS FET) IDR – VDS C – VDS -500 100 VGS = 0 Ta = 25°C 50 (pF) -400 D -300 G Capacitance C Drain reverse current IDR (mA) Common Source IDR S -200 30 Ciss Coss 10 5 3 Crss Common Source VGS = 0 f = 1 MHz -100 Ta = 25°C 1 -0.1 0 0 0.2 0.4 0.6 0.8 1.0 Drain-Source voltage VDS 1.2 -0.3 -1 1.4 400 VDD = -3 V VGS = 0~-2.5 V toff P D* Ta = 25°C 100 tf 50 ton Drain power dissipation Switching time t (ns) Mounted on FR4 board. (mW) Common Source 500 10 -1 -30 PD* – Ta t – ID 30 -10 (V) (V) 1000 300 -3 Drain-Source voltage VDS tr -3 -10 Drain current -30 ID -100 (25.4 mm ´ 25.4 mm ´ 1.6 t 2 Cu Pad: 0.32 mm ´ 6) 300 200 100 -300 0 0 (mA) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) *: Total rating 7 2002-01-17 SSM6L05FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 2002-01-17