TOSHIBA SSM3K309T

SSM3K309T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K309T
○ Power Management Switch Applications
○ High-Current Switching Applications
Unit: mm
•
1.8V drive
•
Low on-resistance : Ron = 47mΩ (max.) (@VGS = 1.8V)
: Ron = 35mΩ (max.) (@VGS = 2.5V)
: Ron = 31mΩ (max.) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
20
V
Gate–source voltage
VGSS
±12
V
DC
ID
4.7
Pulse
IDP
9.4
PD (Note 1)
700
mW
Drain current
Drain power dissipation
A
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
JEDEC
―
JEITA
―
TOSHIBA
Weight:
2-3S1A
10mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain–source breakdown voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = 1 mA, VGS = 0
20
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = -12 V
12
⎯
⎯
VDS =20 V, VGS = 0
⎯
⎯
1
μA
Drain cutoff current
IDSS
Gate leakage current
V
IGSS
VGS = ±12 V, VDS = 0
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = 3 V, ID = 1 mA
0.35
⎯
1.0
V
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 4.0A
13
25
⎯
S
(Note2)
⎯
22
31
(Note2)
⎯
25
35
⎯
30
47
ID = 4.0 A, VGS = 4.0 V
Drain–source ON-resistance
RDS (ON)
ID = 3.0 A, VGS = 2.5 V
ID = 1.0 A, VGS = 1.8 V
(Note2)
(Note2)
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
1020
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
175
⎯
pF
Crss
pF
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
160
⎯
Turn-on time
ton
VDD = 10 V, ID = 2A
⎯
23
⎯
Turn-off time
toff
VGS = 0~2.5 V, RG = 4.7 Ω
⎯
34
⎯
⎯
-0.85
-1.2
Reverse transfer capacitance
Switching time
Drain–source forward voltage
VDSF
ID = -4.7 A, VGS = 0
(Note2)
ns
V
Note2: Pulse test
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SSM3K309T
Switching Time Test Circuit
(b) VIN
(a) Test Circuit
2.5 V
90%
2.5 V
OUT
IN
RG
0
10 μs
VDD
VDD = 10 V
RG = 4.7 Ω
< 1%
D.U. =
VIN: tr, tf < 5 ns
Common source
Ta = 25°C
0V
10%
VDD
90%
(c) VOUT
10%
VDS (ON)
tr
ton
Marking
tf
toff
Equivalent Circuit (top view)
3
3
KDM
1
2
1
2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM3K309T
ID – VDS
10
ID – VGS
10
4.0 V 2.5 V 1.8 V
1.5 V
ID
6
4
VGS = 1.2 V
2
0
Common Source
Ta = 25 °C
0
0.4
0.2
0.6
0.8
Drain - Source voltage
VDS
0.1
Ta = 100 °C
Drain current
ID
Drain current
1
(A)
(A)
8
Common Source
VDS = 3 V
0.01
25 °C
0.001
− 25 °C
0.0001
0
1.0
(V)
1.0
RDS (ON) – VGS
100
Common Source
Ta = 25°C
Common Source
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
ID =4.0A
50
25 °C
Ta = 100 °C
− 25 °C
0
2
6
4
Gate - Source voltage
8
2.5 V
VGS = 4.0 V
0
2
6
4
Drain current
ID
8
10
(A)
Vth – Ta
1.0
Gate threshold voltage
Vth (V)
Common Source
1.0 A / 1.8 V
3.0 A / 2.5 V
ID = 4.0 A / VGS = 4.0 V
0
−50
1.8 V
VGS (V)
RDS (ON) – Ta
50
50
0
10
100
Drain – Source on-resistance
RDS (ON) (mΩ)
VGS (V)
RDS (ON) – ID
100
0
2.0
Gate - Source voltage
Common Source
VDS = 3 V
ID = 1 mA
0.8
0.6
0.4
0.2
0
0
50
Ambient temperature
100
Ta
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2007-11-01
SSM3K309T
IDR – VDS
(S)
⎪Yfs⎪
|Yfs| – ID
30
10 VDS = 3 V
10
IDR
Ta = 25 °C
Drain reverse current
Forward transfer admittance
3
1
0.3
0.1
0.03
Common Source
VGS = 0 V
(A)
Common Source
D
IDR
Ta = 25 °C
1
G
S
0.1
0.01
100 °C
0.001
25 °C
−25 °C
0.01
0.001
0.1
0.01
1
Drain current
ID
0.0001
0
10
-0.8
-0.6
-1.0
VDS
-1.2
(V)
t – ID
1000
Common Source
VDD = 10 V
VGS = 0 ∼ 2.5 V
Ta = 25 °C
RG = 4.7 Ω
toff
3000
(ns)
Ciss
(pF)
-0.4
Drain-Source voltag
C – VDS
5000
-0.2
(A)
1000
tf
Capacitance
300
Switching time
C
t
100
Coss
100
Crss
Common Source
ton
10
tr
Ta = 25 °C
f = 1 MHz
VGS = 0 V
30
10
0.1
1
10
Drain – Source voltage
1
0.01
100
VDS
0.1
Drain current
(V)
rth – tw
Drain power dissipation PD (mW)
Transient thermal impedance Rth (°C/W)
b
100
a
Single Pulse
a: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 0.8 mm2×3)
1
0.001
0.01
0.1
1
Pulse width
ID
10
(A)
PD – Ta
1000
10
1
10
tw
100
1000
800
a
600
400
(s)
b
200
0
-40
1000
a: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 0.8 mm2×3)
-20
0
20
40
60
80
Ambient temperature
4
100 120 140 160
Ta
(°C)
2007-11-01
SSM3K309T
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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