FAIRCHILD FJP3835

FJP3835
FJP3835
Power Amplifier
• High Current Capability : IC=8A
• High Power Dissipation
• Wide S.O.A
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
200
Units
V
120
V
8
V
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
PC
Collector Dissipation (TC=25°C)
50
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=5mA, IE=0
Min.
200
120
BVCEO
Collector-Emitter Breakdown Voltage
IC=10mA, RBE=∞
BVEBO
Emitter-Base Breakdown Voltage
IE=5mA, IC=0
ICBO
Collector Cut-off Current
VCB=80V, IE=0
IEBO
hFE
Emitter Cut-off Current
* DC
Current Gain
Typ.
Units
V
V
8
V
VEB=4V, IC=0
VCE=4V, IC=3A
Max.
120
0.1
mA
0.1
mA
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC=3A, IB=0.3A
0.5
VBE(sat)
Base-Emitter On Voltage
IC=3A, IB=0.3A
1.2
fT
Current Gain Bandwidth Product
VCE=5V, IC=1A
V
V
30
MHz
Cob
Output Capacitance
VCB=10V, f=1MHz
210
pF
tON
Turn On Time
0.26
µs
tF
Fall Time
0.68
µs
tSTG
Storage Time
VCC=20V,
IC=1A=10IB1=-10IB2
RL=20Ω
6.68
µs
* Pulse Test : PW=20µs
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FJP3835
Typical Characteristics
1000
7
IB = 35mA
VCE = 4V
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
6
5
4
3
IB = 10mA
2
IB = 5mA
o
o
TC = 125 C
o
o
TC = - 25 C
10
0
2
4
6
8
0.01
0.1
VCE [V], COLLECTOR-EMITTER VOLTAGE
10
Figure 2. DC current Gain
1
10
IC = 10 IB
VBE(sat), SATURATION VOLTAGE
IC = 10 IB
0.1
o
TC = - 25 C
o
TC = 25 C
o
TC = 75 C
o
TC = 125 C
0.01
1E-3
0.01
0.1
1
o
1
TC = 25 C
o
TC = - 25 C
o
TC = 75 C
o
TC = 125 C
0.1
0.01
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
100
IC MAX. (Pulse)
100ms
10
IC MAX. (DC)
10ms
1
0.1
Single Pulse
o
TC=25[ C]
PC[W], POWER DISSIPATION
100
0.01
0.1
1
IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic
VCE(sat) [V], SATURATION VOLTAGE
TC = 25 C
100
1
0
IC[A], COLLECTOR CURRENT
TC = 75 C
80
60
40
20
0
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2003 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, December 2003
FJP3835
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I6