DMP210DUDJ NEW PRODUCT DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance o 5.0Ω @ -4.5V o 7.0Ω @ -2.5V o 10Ω @ -1.8V o 15Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH) <1V Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.0027 grams (approximate) SOT-963 ESD protected Maximum Ratings TOP VIEW G1 S1 S2 G2 D1 Internal Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VDSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) @TA = 25°C @TA = 85°C Pulsed Drain Current TP = 10μs Thermal Characteristics Value -20 Units V VGSS ±8 V ID -140 -100 mA IDM -600 mA Symbol PD Value 330 Units mW RθJA 377.16 °C/W TJ, TSTG -55 to +150 °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient, Note 1 Operating and Storage Temperature Range Notes: D2 1. Device mounted on 1”x1” FR-4 substrate PC board, with minimum recommended pad layout, single sided. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMP210DUDJ Document number: DS31494 Rev. 4 - 2 1 of 6 www.diodes.com June 2010 © Diodes Incorporated DMP210DUDJ Electrical Characteristics @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS ⎯ ⎯ ⎯ ⎯ ⎯ -100 -50 ±100 V nA nA nA VGS = 0V, ID = -250mA VDS = -16V, VGS = 0V VDS = -5.0V, VGS = 0V VGS = ±5.0V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -50mA VGS = -1.8V, ID = -20mA VGS = -1.5V, ID = -10mA VDS = -10V, ID = -0.2A VGS = 0V, IS = -115mA Zero Gate Voltage Drain Current IDSS Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage IGSS -20 ⎯ ⎯ ⎯ VGS(th) -0.5 ⎯ -1.0 V Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ 5.0 7.0 10 15 Ω |Yfs| VSD 200 -0.5 ⎯ ⎯ ⎯ -1.2 mS V Ciss Coss Crss ⎯ ⎯ ⎯ 13.72 4.01 2.34 175 30 20 pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ 20 37 112 97 ⎯ ⎯ ⎯ ⎯ ms VGS = -4.5V, VDD = -15V ID = -180mA, RG = 2.0Ω Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS (Note 5) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. Typical Characteristics 0.6 0.6 Av e VGS (V) @ -55° C 0.5 0.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage 0.4 0.3 0.2 Av e VGS (V) @ 25 °C 0.4 Av e VGS (V) @ 85 °C Av e VGS (V) @ 125° C 0.3 Av e VGS (V) @ 150° C 0.2 0.1 0.1 0.0 0 V DS=5.0V 0 0.5 1 1.5 2 2.5 3 3.5 VD S, DRAIN-SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DMP210DUDJ Document number: DS31494 Rev. 4 - 2 4 2 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 V GS , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics June 2010 © Diodes Incorporated DMP210DUDJ RDS(ON) , DRAIN-SOURCE ON-RESISTANCE ( Ω ) RDS(ON) , DRAIN-SOURCE ON-RESISTANCE ( Ω ) 100 RDS(ON) ( Ω ) Ave @ V GS =1.5V 10 RDS(ON) ( Ω ) Ave @ V GS =1.8V RDS(ON) ( Ω ) Ave @ V GS =2.5V RDS(ON) ( Ω ) Ave @ V GS =4.5V 1 0.001 10 V GS =4.5V 9 Av e RDS(ON ) (R) @ 150° C 8 7 Av e RDS(ON ) (R) @ 125° C 6 5 4 Av e RDS(ON ) (R) @ 85 °C 3 Av e RDS(ON ) (R) @ 25 °C 2 Av e RDS(ON ) (R) @ -55° C 1 0 0.01 0.1 ID, DRAIN-SOURCE CU RRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 0 0.1 0.2 0.3 0.4 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.5 12 RDS(ON)( Ω ) @ VGS=4.5V, ID=200mA 1.4 1.2 RDS(ON)( Ω ) @ VGS=2.5V, ID=50mA 1 0.8 RDS(ON), DRAIN-SOUR CE ON-RESISTANCE (N ormalized) 1.6 RDS(ON), DRAIN-SOUR CE ON-RESISTANCE (N ormalized) NEW PRODUCT Typical Characteristics 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JU NCTION TEMPERATU RE (° C) Fig. 5 On-Resisitance Variation with Temperature DMP210DUDJ Document number: DS31494 Rev. 4 - 2 3 of 6 www.diodes.com 10 8 RDS(ON)( Ω ) @ VGS=2.5V, ID=50mA 6 4 RDS(ON)( Ω ) @ VGS=4.5V, ID=200mA 2 0 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (° C) Fig. 6 On-Resisitance vs.Temperature 150 June 2010 © Diodes Incorporated DMP210DUDJ Typical Characteristics 0.6 V GS(th), GATE THRESHOLD VOLTAGE (V) V SD (V) @ V GS =0V 1.2 TA =25° C IS , SOURCE CURRENT (A) 0.5 1 V (th) (V) @ ID= 1mA 0.8 0.6 V (th) (V) @ ID= 250 μ A 0.4 0.4 0.3 0.2 0.1 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 V SD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10000 100 IDSS (nA) Ave @ 150 °C IDSS , LEAKAGE CURRENT (nA) f=1MHz CT, JUNCTION CAPACITANCE (pF) CISS Ave(pF) 10 COSS Av e(pF) CRSS Ave(pF ) 1000 IDSS (nA) Ave @ 125 °C 100 IDSS (nA) Ave @ 85 ° C 10 IDSS (nA) Ave @ 25 ° C 1 IDSS (nA) Ave @ -55 °C 1 0 0.1 4 8 12 16 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 1 r(t) @ D=0.7 20 0 2 4 6 8 10 12 14 16 18 20 VDS , DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage r(t) @ D=0.9 r(t) @ D=0.5 r(t), Transient Thermal Resistance NEW PRODUCT 1.4 r(t) @ D=0.3 0.1 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 0.01 r(t) @ D=0.01 r(t) @ D=0.005 Rthja (t)=r(t) *R thja Rthja=369C/W Duty Cycle, D=t1/t2 r(t) @ D=Single Puls e 0.001 0.00001 0.0001 DMP210DUDJ Document number: DS31494 Rev. 4 - 2 0.001 0.01 0.1 1 t1, Pulse Duration Time (sec) Fig. 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1000 June 2010 © Diodes Incorporated DMP210DUDJ Ordering Information (Note 6) Part Number DMP210DUDJ-7 NEW PRODUCT Notes: Case SOT-963 Packaging 10,000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information (Note 7) P1 Notes: P1 = Product Type Marking Code 7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). Package Outline Dimensions A B SOT-963 Dim Min Max Typ A 0.10 0.20 0.15 B 0.95 1.05 1.00 C 0.95 1.05 1.00 D 0.35 G 0.70 H 0.95 1.05 1.00 K 0.40 0.50 0.45 L 0.05 0.15 0.10 M 0.05 0.15 0.10 All Dimensions in mm C D G M K H L Suggested Pad Layout E Z E C G Y Dimensions Value (in mm) Z 1.10 G 0.70 X 0.20 Y 0.20 C 0.90 E 0.35 X DMP210DUDJ Document number: DS31494 Rev. 4 - 2 5 of 6 www.diodes.com June 2010 © Diodes Incorporated DMP210DUDJ NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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