DIODES ZXSBMR16PT8

ZXSBMR16PT8
MR16: Schottky bridge rectifier plus freewheel diode
Summary
Schottky Bridge and Freewheel diode for use in MR16 LED Drive
Internal Ambient Temperature = 90°C MAX*
VR =13.2VRMS; IF = 0.4AAVG; IR = 10µA
*within MR16 circuit enclosure
Description
This low leakage Schottky bridge and freewheel diode have been
specifically designed for the MR16 LED driver solution alongside
ZXLD1350E5 as described in Design Note DN86.
SM8
Key benefits
•
DC OUT
C
GND
A
Compact surface mount solution and reduced component count in
MR16 LED drive circuit
AC
IN
Features
•
Optimized bridge and freewheel diode for use in MR16
LED diode circuitry
•
Low VF and low reverse leakage current
Ordering information
Device
ZXSBMR16PT8TA
N/C
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1000
AC IN
GND
DC OUT
GND
AC IN
A
C
Device marking
ZXSB
MR16P
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Pinout - top view
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ZXSBMR16PT8
Application Schematic from DN86
ZXLD1350E5
ZXSBMR16PT8
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Maximum repetitive reverse voltage
VRRM
40
V
Maximum RMS bridge input voltage
VRMS
13.2
V
Average rectified forward current(a)(b)
IF(AV)
0.4
A
Peak repetitive forward current
IFPK
3.5
A
Non repetitive forward current t=≤100µs
t=≤10ms
IFSM
13
3.5
A
A
PD
1
W
Tstg
-55 to +150
°C
Junction temperature forward dissipation only
Tj
150
°C
Junction temperature reverse dissipation(a)(b)(c)
Tj
125
°C
Tamb
90
°C
Symbol
Limit
Unit
R⍜JA
125
°C/W
Bridge
Package
Power dissipation at Tamb=25°C(a)
Storage temperature range
MR16 LED internal ambient temperature(d)
Thermal characteristics
Parameter
Junction to
ambient(a)
NOTES:
(a) For a bridge mounted on1.6mm FR4 PCB with minimum copper pads and track dimensions in still air.
(b) Supply 12V RMS with capacitive bridge load.
(c) Maximum bridge operating junction temperature must be reduced with increased reverse bias voltage to maintain
unconditional thermal stability.
(d) Refer to Design Note DN86
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ZXSBMR16PT8
Electrical characteristics per diode (at Tamb = 25°C unless otherwise stated)
Schottky diode characteristics
Parameter
Symbol
Reverse breakdown
voltage
V(BR)R
Forward voltage
VF
Min.
Typ.
Max.
40
Unit
V
305
355
405
485
570
640
360
410
470
550
660
750
415
10
Conditions
IR=200µA
mV
mV
mV
mV
mV
mV
IF=50mA (*)
IF=100mA(*)
IF=250mA(*)
IF=500mA(*)
IF=750mA(*)
IF=1A(*)
mV
IF=500mA(*),Ta = 100°C
µA
µA
VR=30V
VR=30V,Ta = 85°C
Reverse current
IR
6
370
Diode capacitance
CD
16
pF
f=1MHz,VR=30V
Reverse recovery time
Reverse recovery charge
trr
Qrr
3
210
ns
pC
Switched from
IF = 500mA to VR = 5.5V
Measured @ IR 50mA.
di/dt = 500mA/ns.
Rsource = 6Ω;Rload = 10Ω
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300µs; duty cycle ≤2%.
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ZXSBMR16PT8
Typical characteristics single diode
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ZXSBMR16PT8
Package outline - SM8
DIM
Millimeters
Inches
DIM
Millimeters
Inches
Min.
Max.
Typ.
Min.
Max.
Typ.
Min.
Max.
Typ.
Min.
Max.
Typ.
A
-
1.7
-
-
0.067
-
e1
-
-
4.59
-
-
0.1807
A1
0.02
0.1
-
0.0008
0.004
-
e2
-
-
1.53
-
-
0.0602
b
-
-
0.7
-
-
0.0275
He
6.7
7.3
-
0.264
0.287
-
c
0.24
0.32
-
0.009
0.013
-
Lp
0.9
-
-
0.035
-
-
D
6.3
6.7
-
0.248
0.264
-
␣
-
15°
-
-
15°
-
E
3.3
3.7
-
0.130
0.145
-
␤
-
-
10°
-
-
10°
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXSBMR16PT8
Definitions
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Product status recommended for new designs
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