DIODES ZX5T949GTA

ZX5T949G
30V PNP LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = -30V : RSAT = 31m ; IC = -5.5A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 30V
PNP transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
SOT223
• 5.5 Amps continuous current
• Up to 20 Amps peak current
• Very low saturation voltages
• Exceptional gain linearity down to 10mA
APPLICATIONS
• DC - DC Converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T949GTA
7”
13”
12mm
embossed
1,000 units
ZX5T949GTC
PINOUT
4,000 units
DEVICE MARKING
• X5T949
TOP VIEW
ISSUE 1 - NOVEMBER 2003
1
SEMICONDUCTORS
ZX5T949G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV CBO
-50
V
Collector-emitter voltage
BV CEO
-30
V
BV EBO
-7
V
Emitter-base voltage
(a)
IC
-5.5
A
Peak pulse current
I CM
-20
A
Power dissipation at T A =25°C (a)
PD
3.0
W
24
mW/°C
Continuous collector current
Linear derating factor
Power dissipation at T A =25°C (b)
PD
Linear derating factor
Operating and storage temperature range
T j , T stg
1.6
W
12.8
mW/°C
-55 to 150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient (a)
R ⍜JA
42
°C/W
(b)
R ⍜JA
78
°C/W
Junction to ambient
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
2
ZX5T949G
CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
3
SEMICONDUCTORS
ZX5T949G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
MAX. UNIT CONDITIONS
BV CBO
-50
-70
V
I C = -100␮A
Collector-emitter breakdown voltage BV CER
-50
-70
V
I C = -1␮A, RB < 1k⍀
Collector-emitter breakdown voltage BV CEO
-30
-40
V
I C = -10mA *
Emitter-base breakdown voltage
BV EBO
-7.0
-8.0
V
I E = -100␮A
Collector cut-off current
I CBO
Collector cut-off current
<1
<1
I CER
R < 1k⍀
-20
nA
V CB = -40V
-0.5
␮A
V CB = -40V, Tamb = 100°C
-20
nA
V CB = -40V
-0.5
␮A
VCB = -40V, Tamb = 100°C
V EB = -6V
Emitter cut-off current
I EBO
<1
-10
nA
Collector-emitter saturation voltage
V CE(SAT)
-30
-45
mV
I C = -0.5A, I B = -20mA *
-40
-60
mV
-60
-85
mV
I C = -1A, I B = -100mA *
I C = -1A, I B = -20mA *
-70
-90
mV
I C = -2A, I B = -200mA *
-170
-210
mV
I C = -5.5A, I B = -500mA *
-1030 -1130
mV
I C = -5.5A, IB = -500mA *
-900
mV
Base-emitter saturation voltage
V BE(SAT)
Base-emitter turn-on voltage
V BE(ON)
Static forward current transfer ratio
h FE
-1000
I C = -5.5A, V CE = -1V *
100
225
I C = -10mA, V CE = -1V *
I C = -1A, V CE = -1V *
100
200
70
145
I C = -5A, V CE = -1V *
10
20
I C = -20A, V CE = -1V *
I C = -100mA, V CE = -10V
300
Transition frequency
fT
110
Output capacitance
C OBO
83
pF
t ON
43
ns
t OFF
230
f = 50MHz
Switching times
V CB = -10V, f = 1MHz *
I C = -1A, V CC = -10V,
I B1 = I B2 = -100mA
NOTES
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
4
ZX5T949G
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
5
SEMICONDUCTORS
ZX5T949G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
A1
0.02
0.10
0.0008
0.004
e1
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
2.30 BSC
4.60 BSC
Min
Max
0.0905 BSC
0.181 BSC
© Zetex plc 2003
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ISSUE 1 - NOVEMBER 2003
SEMICONDUCTORS
6