ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 35mV at 6A SOT223 • 6 amps continuous current • Up to 20 amps peak current • Very low saturation voltages • Excellent hFE characteristics up to 10 amps APPLICATIONS • Emergency lighting circuits • Motor driving (including DC fans) • Solenoid, relay and actuator drivers • DC Modules • Backlight Inverters PINOUT ORDERING INFORMATION DEVICE ZXTN2010GTA ZXTN2010GTC REEL SIZE 7” 13” TAPE WIDTH QUANTITY PER REEL 12mm 1000 units embossed 4000 units TOP VIEW DEVICE MARKING ZXTN 2010 ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXTN2010G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-base voltage BV CBO 150 Collector-emitter voltage BV CEO 60 V Emitter-base voltage BV EBO 7 V Continuous collector current (a) IC 6 A Peak pulse current I CM 20 A Power dissipation at T A =25°C (a) PD 3.0 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 24 mW/°C PD 1.6 W 12.8 mW/°C Operating and storage temperature range T j , T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER Junction to ambient SYMBOL (a) R ⍜JA VALUE UNIT 42 °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 2 ZXTN2010G CHARACTERISTICS ISSUE 1 - JUNE 2005 3 SEMICONDUCTORS ZXTN2010G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO 150 190 MAX. UNIT CONDITIONS V I C =100A I C =1A, RBⱕ1k⍀ Collector-emitter breakdown voltage BV CER 150 190 V Collector-emitter breakdown voltage BV CEO 60 80 V I C =10mA* Emitter-base breakdown voltage BV EBO 7 8.1 V I E =100A Collector cut-off current I CBO Collector cut-off current 20 nA V CB =120V 0.5 A VCB=120V,Tamb=100⬚C I CER 20 nA V CB =120V R ⱕ 1k⍀ 0.5 A VCB=120V,Tamb=100⬚C V EB =6V Emitter cut-off current I EBO Collector-emitter saturation voltage V CE(SAT) 10 nA 20 30 mV I C =100mA, I B =5mA* 45 60 mV IC=1A, IB=100mA* 50 70 mV IC=1A, IB=50mA* 100 135 mV IC=2A, IB=50mA* IC=6A, IB=300mA* 210 260 mV Base-emitter saturation voltage V BE(SAT) 1000 1100 mV I C =6A, I B =300mA* Base-emitter turn-on voltage V BE(ON) 940 1050 mV I C =6A, V CE =1V* Static forward current transfer ratio H FE 100 200 100 200 55 105 IC=5A, VCE=1V* 20 40 IC=10A, VCE=1V* 130 I C =10mA, V CE =1V* IC=2A, VCE=1V* 300 MHz I C =100mA, V CE =10V Transition frequency fT Output capacitance C OBO 31 pF V CB =10A, f=1MHz* Switching times t ON 42 ns t OFF 760 I C =1A, V CC =10V, I B1 =I B2 =100mA f=50MHz NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 4 ZXTN2010G TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 SEMICONDUCTORS ZXTN2010G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E b2 2.90 3.10 0.114 0.122 C 0.23 0.33 0.009 0.013 D 6.30 6.70 0.248 0.264 6.70 7.30 0.264 0.287 E1 3.30 3.70 0.130 0.146 L 0.90 - 0.355 - - - - - - © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2005 SEMICONDUCTORS 6