DIODES FCX1053ATA

FCX1053A
SOT89 NPN medium power transistor
Summary
BVCEO = 75V
RCE(sat) = 78m⍀
IC = 3A
Description
This medium power NPN transistor, offered in the SOT89 package
provides high current and low saturation voltage making it ideal for use
in various driving and power management applications.
Features
C
•
Extremely low equivalent on-resistance; RCE(sat) = 7.8m⍀ at 4.5A
•
3 Amps continuous current
•
Up to 10 amps peak current
•
Very low saturation voltages
•
Excellent hFE characteristics up to 10 amps
B
E
Applications
•
Emergency lighting circuits
•
Motor driving (including DC fans)
•
Solenoid, relay and actuator drivers
•
DC-DC modules
•
Backlight inverters
•
Power switches
•
MOSFET gate drivers
E
C
C
B
Pinout - top view
Ordering information
Device
FCX1053ATA
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
12
1,000
Device marking
053
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FCX1053A
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
75
V
Emitter-base voltage
VEBO
5
V
IC
3
A
Peak pulse current
ICM
10
A
Power dissipation at Tamb = 25°C(a)
PD
1.6
W
13
mW/°C
2.0
W
16
mW/°C
Tj;Tstg
-55 to +150
°C
Continuous collector current(a)
Linear derating factor
PD
Power dissipation at Tamb = 25°C(b)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Value
Unit
(a)
Junction to ambient
R⍜JA
72
°C/W
Junction to ambient(b)
R⍜JA
62
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
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FCX1053A
Thermal characteristics
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FCX1053A
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base
breakdown voltage
V(BR)CBO
150
Collector-emitter
breakdown voltage
VCES
Collector-emitter
breakdown voltage
Max.
Unit
Conditions
250
V
IC = 100␮A
150
250
V
IC = 100␮A
VCEO
75
100
V
IC = 10mA
Collector-emitter
breakdown voltage
VCEV
150
250
V
IC = 100␮A, VEB = 1V
Emitter-base breakdown
voltage
V(BR)EBO
5
8.8
V
IE = 100␮A
Collector cut-off current
ICBO
0.9
10
nA
VCB = 120V
Emitter cut-off current
IEBO
0.3
10
nA
VEB = 4V
Collector-emitter cut-off
current
ICES
1.5
10
nA
VCES = 120V
Collector-emitter
saturation voltage
VCE(sat)
21
30
mV
IC = 0.2A, IB = 20mA (*)
55
75
mV
IC = 0.5A, IB = 20mA(*)
150
200
mV
IC = 1A, IB = 10mA(*)
160
210
mV
IC = 2A, IB = 100mA(*)
350
440
mV
IC = 4.5A, IB = 200mA(*)
Base-emitter saturation
voltage
VBE(sat)
900
1000
mV
IC = 3A, IB = 100mA(*)
Base-emitter turn-on
voltage
VBE(on)
825
950
mV
IC = 3A, VCE = 2V(*)
Static forward current
transfer ratio
hFE
270
440
300
450
300
450
IC = 1A, VCE = 2V(*)
40
60
IC = 4.5A, VCE = 2V(*)
20
IC = 10A, VCE = 2V(*)
IC = 10mA, VCE = 2V(*)
1200
IC = 0.5A, VCE = 2V(*)
ton
162
ns
IC = 2A, IB1 = IB2 = ⫾20mA,
VCC = 50V
toff
900
ns
IC = 2A, IB1 = IB2 = ⫾20mA,
VCC = 50V
Transition frequency
fT
140
MHz
Output capacitance
COBO
21
Switching times
30
pF
IC = 50mA, VCE = 10V,
f = 100MHz
VCB = 10V, f = 1MHz
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty ⱕ2%.
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FCX1053A
Typical characteristics
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FCX1053A
Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
DIM
Millimeters
Inches
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
E1
2.13
2.29
0.084
0.090
B
0.44
0.56
0.017
0.022
e
1.50 BSC
0.059 BSC
B1
0.36
0.48
0.014
0.019
e1
3.00 BSC
0.118 BSC
C
0.35
0.44
0.014
0.019
H
3.94
4.25
0.155
0.167
D
4.40
4.60
0.173
0.181
L
0.89
1.20
0.155
0.167
E
2.29
2.60
0.090
0.102
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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USA
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Hong Kong
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Oldham, OL9 9LL
United Kingdom
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Fax: (49) 89 45 49 49 49
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Fax: (1) 631 360 8222
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Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
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