FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE(sat) = 78m⍀ IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications. Features C • Extremely low equivalent on-resistance; RCE(sat) = 7.8m⍀ at 4.5A • 3 Amps continuous current • Up to 10 amps peak current • Very low saturation voltages • Excellent hFE characteristics up to 10 amps B E Applications • Emergency lighting circuits • Motor driving (including DC fans) • Solenoid, relay and actuator drivers • DC-DC modules • Backlight inverters • Power switches • MOSFET gate drivers E C C B Pinout - top view Ordering information Device FCX1053ATA Reel size (inches) Tape width (mm) Quantity per reel 7 12 1,000 Device marking 053 Issue 2 - July 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com FCX1053A Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 75 V Emitter-base voltage VEBO 5 V IC 3 A Peak pulse current ICM 10 A Power dissipation at Tamb = 25°C(a) PD 1.6 W 13 mW/°C 2.0 W 16 mW/°C Tj;Tstg -55 to +150 °C Continuous collector current(a) Linear derating factor PD Power dissipation at Tamb = 25°C(b) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Value Unit (a) Junction to ambient R⍜JA 72 °C/W Junction to ambient(b) R⍜JA 62 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - July 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com FCX1053A Thermal characteristics Issue 2 - July 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com FCX1053A Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage V(BR)CBO 150 Collector-emitter breakdown voltage VCES Collector-emitter breakdown voltage Max. Unit Conditions 250 V IC = 100A 150 250 V IC = 100A VCEO 75 100 V IC = 10mA Collector-emitter breakdown voltage VCEV 150 250 V IC = 100A, VEB = 1V Emitter-base breakdown voltage V(BR)EBO 5 8.8 V IE = 100A Collector cut-off current ICBO 0.9 10 nA VCB = 120V Emitter cut-off current IEBO 0.3 10 nA VEB = 4V Collector-emitter cut-off current ICES 1.5 10 nA VCES = 120V Collector-emitter saturation voltage VCE(sat) 21 30 mV IC = 0.2A, IB = 20mA (*) 55 75 mV IC = 0.5A, IB = 20mA(*) 150 200 mV IC = 1A, IB = 10mA(*) 160 210 mV IC = 2A, IB = 100mA(*) 350 440 mV IC = 4.5A, IB = 200mA(*) Base-emitter saturation voltage VBE(sat) 900 1000 mV IC = 3A, IB = 100mA(*) Base-emitter turn-on voltage VBE(on) 825 950 mV IC = 3A, VCE = 2V(*) Static forward current transfer ratio hFE 270 440 300 450 300 450 IC = 1A, VCE = 2V(*) 40 60 IC = 4.5A, VCE = 2V(*) 20 IC = 10A, VCE = 2V(*) IC = 10mA, VCE = 2V(*) 1200 IC = 0.5A, VCE = 2V(*) ton 162 ns IC = 2A, IB1 = IB2 = ⫾20mA, VCC = 50V toff 900 ns IC = 2A, IB1 = IB2 = ⫾20mA, VCC = 50V Transition frequency fT 140 MHz Output capacitance COBO 21 Switching times 30 pF IC = 50mA, VCE = 10V, f = 100MHz VCB = 10V, f = 1MHz NOTES: (*) Measured under pulsed conditions. Pulse width = 300s. Duty ⱕ2%. Issue 2 - July 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com FCX1053A Typical characteristics Issue 2 - July 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com FCX1053A Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 E1 2.13 2.29 0.084 0.090 B 0.44 0.56 0.017 0.022 e 1.50 BSC 0.059 BSC B1 0.36 0.48 0.014 0.019 e1 3.00 BSC 0.118 BSC C 0.35 0.44 0.014 0.019 H 3.94 4.25 0.155 0.167 D 4.40 4.60 0.173 0.181 L 0.89 1.20 0.155 0.167 E 2.29 2.60 0.090 0.102 - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - July 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com