DIODES DMG4800LFG-7

DMG4800LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
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Features
Mechanical Data
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Case: DFN3030-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
Polarity: See Diagram
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.0172 grams (approximate)
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8
7
6
5
5
6
7
8
S
2
S
1
D
2
1
TOP VIEW
BOTTOM VIEW
3
G
4
4
S
3
BOTTOM VIEW
Pin Configuration
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Symbol
VDSS
VGSS
Steady
State
TA = 25°C
TA = 85°C
ID
Pulsed Drain Current (Note 4)
Value
30
±25
7.44
4.82
Units
V
V
A
IDM
40
A
Symbol
PD
RθJA
TJ, TSTG
Value
0.94
133
-55 to +150
Unit
W
°C/W
°C
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
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www.diodes.com
November 2009
© Diodes Incorporated
DMG4800LFG
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
30
-
-
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
0.8
-
1.5
V
RDS (ON)
-
11
15
17
24
mΩ
|Yfs|
VSD
-
8
0.7
1.0
S
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
VDS = 10V, ID = 9A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
798
128
122
1.37
9.47
1.87
5.60
5.03
4.50
26.33
8.55
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS =0V, VGS = 0V, f = 1MHz
VGS = 5V, VDS = 15V,
ID = 9A
VDD = 15V, VGEN = 10V,
RL = 15Ω, RG = 6Ω, ID = 1A
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
30
30
VGS = 10V
25
VDS = 5V
25
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
20
VGS = 3.0V
15
10
VGS = 2.5V
5
20
15
10
TA = 150°C
TA = 125°C
5
TA = -55°C
VGS = 2.0V
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
TA = 85°C
TA = 25°C
0
2
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1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
November 2009
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.08
0.07
0.06
VGS = 2.5V
0.05
0.04
0.03
0.02
VGS = 4.5V
0.01
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
TA = 150°C
TA = 125°C
0.02
TA = 85°C
TA = 25°C
0.01
TA = -55°C
0
0
RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
1.2
VGS = 4.5V
ID = 10A
0.8
0.6
-50
VGS = 4.5V
5
10
15
20
ID, DRAIN CURRENT (A)
25
30
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.6
1.0
0.03
30
1.8
VGS = 10V
ID = 11.6A
0.03
0.025
0.02
VGS = 4.5V
ID = 10A
0.015
0.01
VGS = 10V
ID = 11.6A
0.005
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
1.6
20
TA = 25°C
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMG4800LFG
ID = 1mA
1.2
ID = 250µA
0.8
0.4
16
12
8
4
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
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0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
November 2009
© Diodes Incorporated
DMG4800LFG
VGS, GATE-SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10
1,000
Ciss
Coss
100
Crss
10
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
8
6
ID = 11.6A
ID = 9A
4
2
0
30
0
2
4
6
8
10
12
14
16
QG, TOTAL GATE CHARGE (nC)
Fig. 10 Total Gate Charge
100
10,000
P(pk), PEAK TRANSIENT POWER (W)
T A = 150°C
IDSS, LEAKAGE CURRENT (nA)
1,000
T A = 125°C
100
T A = 85°C
10
TA = 25°C
1
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
90
Single Pulse
RθJA = 131°C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
80
70
60
50
40
30
20
10
T A = -55°C
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Single Pulse Maximum Power Dissipation
30
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
10,000
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 131°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
T J - T A = P * RθJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
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10
100
1,000
November 2009
© Diodes Incorporated
DMG4800LFG
Ordering Information
(Note 7)
Part Number
DMG4800LFG-7
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DFN3030-8
YYWW
NEW PRODUCT
Notes:
Case
DFN3030-8
N48 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 09 for 2009)
WW = Week code 01 to 52
N48
Package Outline Dimensions
A
A3 SEATING PLANE
A1
e
b
.2
R0
E
00
E2
L
D2
DFN3030-8
Dim Min Max Typ
A
0.57 0.63 0.60
A1
0
0.05 0.02
A3
0.15
⎯
⎯
b
0.29 0.39 0.34
D
2.90 3.10 3.00
D2 2.19 2.39 2.29
e
0.65
⎯
⎯
E
2.90 3.10 3.00
E2
1.64 1.84 1.74
L
0.30 0.60 0.45
All Dimensions in mm
D
Suggested Pad Layout
Z
Dimensions Value (in mm)
Z
2.59
G
0.11
X1
2.49
X2
0.65
Y
0.39
C
0.65
X1
X2
G
Y
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
C
5 of 6
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November 2009
© Diodes Incorporated
DMG4800LFG
NEW PRODUCT
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
6 of 6
www.diodes.com
November 2009
© Diodes Incorporated