DIODES DMN26D0UT

DMN26D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
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Features
Mechanical Data
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Low On-Resistance:
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3.0 Ω @ 4.5V
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4.0 Ω @ 2.5V
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6.0 Ω @ 1.8V
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10 Ω @ 1.5V
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Lead, Halogen, and Antimony Free By Design/RoHS
Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.002 grams (approximate)
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Drain
D
Gate
Gate
Protection
Diode
ESD PROTECTED
Maximum Ratings
EQUIVALENT CIRCUIT
TOP VIEW
S
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current
Thermal Characteristics
TP = 10µs
Symbol
VDSS
VGSS
ID
IDM
Value
20
±10
230
805
Unit
V
V
mA
mA
300
417
-55 to +150
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
G
Source
PD
RθJA
TJ, TSTG
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
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September 2009
© Diodes Incorporated
DMN26D0UT
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = 25°C
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 5)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
20
⎯
⎯
⎯
⎯
500
V
nA
IGSS
⎯
⎯
±1
±500
±100
μA
nA
nA
VGS(th)
0.5
⎯
1.0
V
RDS (ON)
⎯
⎯
⎯
3.0
4.0
6.0
10.0
15.0
Ω
⎯
⎯
1.8
2.4
2.9
3.7
5.4
|Yfs|
VSD
⎯
0.5
242
⎯
⎯
1.0
mS
V
Ciss
Coss
Crss
⎯
⎯
⎯
14.1
2.9
1.6
⎯
⎯
⎯
pF
pF
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
3.8
7.9
13.4
15.2
⎯
⎯
⎯
⎯
ns
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
VGS = 0V, ID = 100μA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±8V, VDS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
VDS =10V, ID = 0.1A
VGS = 0V, IS = 115mA
4. Short duration pulse test used to minimize self-heating effect.
5. Switching characteristics are independent of operating junction temperature.
0.4
0.8
0.7
VGS = 8V
VDS = 10V
VGS = 4.5V
0.6
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Gate-Body Leakage
Symbol
VGS = 3.0V
0.5
0.4
VGS = 2.5V
0.3
VGS = 2.0V
0.2
0.1
0
0
0.3
TA = -55°C
TA = 25°C
TA = 85°C
TA = 125°C
0.2
TA = 150°C
0.1
VGS = 1.5V
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
3
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0
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
September 2009
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
5
4
3
VGS = 1.8V
2
VGS = 2.5V
VGS = 4.5V
1
0.01
0.1
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1
2.0
VGS = 4.5V
3
TA = 150°C
2
TA = 125°C
T A = 85°C
TA = 25°C
1
TA = -55°C
0
0.01
0.1
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1
3.5
1.6
VGS = 4.5V
ID = 500mA
RDSON, DRAIN-SOURCE
ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
4
4.0
1.8
1.4
VGS = 2.5V
ID = 150mA
1.2
1.0
0.8
3.0
2.5
VGS = 2.5V
ID = 150mA
2.0
1.5
VGS = 4.5V
ID = 500mA
1.0
0.6
0.4
-50
0.5
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
1.4
0.8
1.2
0.7
1.0
ID = 1mA
0.8
0.6
ID = 250µA
0.4
0.2
Document number: DS31854 Rev. 2 - 2
0.6
TA = 25°C
0.5
0.4
0.3
0.2
0.1
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMN26D0UT
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMN26D0UT
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0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
September 2009
© Diodes Incorporated
DMN26D0UT
10,000
20
IDSS, LEAKAGE CURRENT (nA)
f = 1MHz
NEW PRODUCT
C, CAPACITANCE (pF)
15
Ciss
10
5
1,000
TA = 150°C
TA = 125°C
100
TA = 85°C
10
1
TA = 25°C
Coss
TA = -55°C
Crss
0
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
0.1
0
20
2
4
6
8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
R θJA = 278°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = Single Pulse
0.001
0.000001 0.00001
Ordering Information
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
10
100
1,000
(Note 6)
Part Number
DMN26D0UT-7
Notes:
t1
Case
SOT-523
Packaging
3,000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
M1
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
2010
X
Feb
2
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
Mar
3
M1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
YM
2011
Y
Apr
4
May
5
2012
Z
Jun
6
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
September 2009
© Diodes Incorporated
DMN26D0UT
Package Outline Dimensions
A
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
⎯
⎯
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°
α
⎯
All Dimensions in mm
B C
G
NEW PRODUCT
H
K
M
N
J
L
D
Suggested Pad Layout
Y
Z
C
X
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
E
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DMN26D0UT
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
6 of 6
www.diodes.com
September 2009
© Diodes Incorporated