DIODES DMG5802LFX

DMG5802LFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(ON)
24V
15mΩ @ VGS = 4.5V
20mΩ @ VGS = 2.5V
ID
TA = 25°C
6.5A
5.6A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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DC-DC Converters
Power management functions
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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Applications
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•
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Case: W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
G1 S1 S1
D1
W-DFN5020-6
D2
D1/D2
G2
G1
S1
G2 S2 S2
ESD PROTECTED TO 3kV
Top View
Bottom View
S2
Equivalent Circuit
Top View
Pin-Out
Ordering Information (Note 4)
Part Number
DMG5802LFX-7
Notes:
Case
W-DFN5020-6
Packaging
3000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
ME
ME = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
YM
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
DMG5802LFX
Document number: DS35009 Rev. 4 - 2
2012
Z
Mar
3
Apr
4
2013
A
May
5
2014
B
Jun
6
2015
C
Jul
7
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Aug
8
2016
D
Sep
9
2017
E
Oct
O
2018
F
Nov
N
Dec
D
December 2012
© Diodes Incorporated
DMG5802LFX
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 5) VGS = 2.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
24
±12
6.5
5.2
ID
IDM
5.6
4.5
70
Symbol
PD
RθJA
TJ, TSTG
Max
0.98
126.5
-55 to +150
ID
Pulsed Drain Current (Note 6)
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
24
-
-
1.0
±10
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
0.9
11
12
13
14
17
0.6
1.5
15
17
18
20
0.9
V
Static Drain-Source On-Resistance
0.6
-
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 6.5A
VGS = 4V, ID = 5.6A
VGS = 3.1V, ID = 5.6A
VGS = 2.5V, ID = 5.6A
VDS = 5V, ID = 6.5A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1066.4
132.0
127.1
1.47
14.5
31.3
2.0
3.1
3.69
13.43
32.18
22.45
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
Test Condition
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID = 5.8A
nC
VGS = 10V, VDS = 15V,
ID = 5.8A
ns
ns
ns
ns
VGS = 10V, VDS = 15V,
RL = 2.1Ω, RG = 3Ω
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG5802LFX
Document number: DS35009 Rev. 4 - 2
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DMG5802LFX
20
20
VGS = 10V
VDS = 5V
VGS = 4.5V
VGS = 4.0V
16
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
16
VGS = 3.5V
VGS = 3.0V
12
VGS = 2.5V
VGS = 2.0V
8
VGS = 1.5V
4
12
8
TA = 150°C
T A = 125°C
T A = 85°C
4
T A = 25°C
TA = -55°C
0
0.5
1.0
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.05
0.04
0.03
VGS = 1.8V
0.02
VGS = 2.5V
VGS = 4.5V
0.01
0
0
0
2.0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
3.0
0.04
VGS = 4.5V
0.03
T A = 150°C
0.02
TA = 125°C
TA = 85°C
TA = 25°C
0.01
T A = -55°C
0
20
0
5
10
15
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
20
0.04
VGS = 10V
ID = 20A
1.4
VGS = 4.5V
ID = 10A
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMG5802LFX
Document number: DS35009 Rev. 4 - 2
RDSON, DRAIN-SOURCE ON-RESISTANCE
1.6
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.5
1.0
1.5
2.0
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
0.03
VGS = 10V
ID = 20A
0.02
VGS = 4.5V
ID = 10A
0.01
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
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DMG5802LFX
20
1.2
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.4
1.0
0.8
ID = 1mA
0.6
ID = 250µA
0.4
12
TA = 25°C
8
4
0.2
0
0
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
100,000
10,000
1,000
IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
f = 1MHz
Ciss
Coss
Crss
100
10
10,000
T A = 150°C
TA = 125°C
1,000
100
TA = 85°C
10
TA = 25°C
1
0
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
24
0
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
24
VGS, GATE-SOURCE VOLTAGE (V)
10
VDS = 15V
ID = 7A
8
6
4
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMG5802LFX
Document number: DS35009 Rev. 4 - 2
40
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DMG5802LFX
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 122°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 /t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A3
A1
D
e
D2
Pin 1 ID
E
E2
L
Z
W-DFN5020-6
Dim
Min
Max
Typ
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.15
−
−
b
0.20 0.30 0.25
D
1.90 2.10 2.00
D2
1.40 1.60 1.50
e
0.50
−
−
E
4.90 5.10 5.00
E2
2.80 3.00 2.90
L
0.35 0.65 0.50
Z
0.375
−
−
All Dimensions in mm
b
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
X
C
X1
G
Y2
Y3
X2
DMG5802LFX
Document number: DS35009 Rev. 4 - 2
Dimensions Value (in mm)
C
0.50
G
0.35
X
0.35
X1
0.90
X2
1.80
Y
0.70
Y2
1.60
Y3
3.20
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DMG5802LFX
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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DMG5802LFX
Document number: DS35009 Rev. 4 - 2
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