DMG6898LSD NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability TOP VIEW ESD PROTECTED TO 2kV Maximum Ratings • • • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate) D1 G1 D1 S1 D2 G2 D2 S2 TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Unit V V IDM Value 20 ±12 9.5 7.1 30 Symbol PD RθJA TJ, TSTG Value 1.28 99.3 -55 to +150 Unit W °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG6898LSD Document number: DS31947 Rev. 3 - 2 1 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG6898LSD @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 1.0 1.5 V RDS (ON) - 11 17 16 23 mΩ |Yfs| VSD - 17 0.7 1.2 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 9.4A VGS = 2.5V, ID = 8.3A VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A Ciss Coss Crss Rg Qg Qg Qgs Qgd - 1149 157 142 1.51 11.6 26 2.7 3.4 11.67 12.49 35.89 12.33 - pF pF pF Ω nC nC nC nC ns ns ns ns tD(on) tr tD(off) tf Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 9.4A VDD = 10V, VGS = 4.5V, RGEN = 6Ω, ID = 1A 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 20 20 VGS = 8.0V 15 ID, DRAIN CURRENT (A) VGS = 4.5V ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 3.0V VGS = 2.5V VGS = 2.0V 10 5 15 VDS = 10V 10 5 TA = 150°C VGS = 1.8V T A = 125°C TA = 85°C T A = 25°C TA = -55°C VGS = 1.5V 0 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG6898LSD Document number: DS31947 Rev. 3 - 2 2 2 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 June 2010 © Diodes Incorporated 0.05 0.04 VGS = 1.8V 0.03 0.02 VGS = 2.5V VGS = 4.5V 0.01 0 2 1.2 VGS = 4.5V ID = 500mA VGS = 2.5V ID = 150mA 0.6 0.4 -50 VGS = 4.5V TA = 150°C 0.02 TA = 125°C T A = 85°C T A = 25°C 0.01 T A = -55°C 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 0.8 0.03 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 1.0 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.06 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.04 0.03 VGS = 4.5V ID = 500mA 0.02 VGS = 2.5V ID = 150mA 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature 20 1.8 1.6 1.4 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG6898LSD 1.2 ID = 1mA 1.0 0.8 ID = 250µA 0.6 0.4 15 T A = 25°C 10 5 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG6898LSD Document number: DS31947 Rev. 3 - 2 3 of 6 www.diodes.com 0 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 June 2010 © Diodes Incorporated DMG6898LSD 1,800 10,000 IDSS, LEAKAGE CURRENT (nA) 1,600 C, CAPACITANCE (pF) 1,200 Ciss 1,000 800 600 400 TA = 150°C 1,000 T A = 125°C 100 TA = 85°C 10 T A = 25°C Coss 200 TA = -55°C Crss 1 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 20 10 VGS, GATE-SOURCE VOLTAGE (V) VDS = 10V ID = 9.4A 8 6 4 2 0 0 4 8 12 16 20 24 28 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1,400 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 205°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.0001 DMG6898LSD Document number: DS31947 Rev. 3 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 4 of 6 www.diodes.com 100 1,000 June 2010 © Diodes Incorporated DMG6898LSD Ordering Information (Note 7) Part Number DMG6898LSD-13 Packaging 2500 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 8 5 Logo G6898LD Part no. YY WW 1 Xth week: 01 ~ 53 Year: “08” = 2008 “09” = 2009 4 Package Outline Dimensions 0.254 NEW PRODUCT Notes: Case SO-8 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMG6898LSD Document number: DS31947 Rev. 3 - 2 5 of 6 www.diodes.com June 2010 © Diodes Incorporated DMG6898LSD NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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