DIODES DMP2069UFY4

DMP2069UFY4
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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•
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•
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Low On-Resistance
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54mΩ @ VGS = -4.5V
•
69mΩ @ VGS = -2.5V
•
90mΩ @ VGS = -1.8V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected Up To 3kV
"Green" Device, Halogen and Antimony Free (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: DFN2015H4-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
S
D
G
ESD PROTECTED TO 3kV
Maximum Ratings
TOP VIEW
BOTTOM VIEW
Internal Schematic
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Units
V
V
IDM
Value
-20
±8
-2.5
-2.2
-12
Symbol
PD
RθJA
TJ, TSTG
Value
0.53
231
-55 to +150
Unit
W
°C/W
°C
TA = 25°C
TA = 70°C
ID
Pulsed Drain Current (Note 4)
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMP2069UFY4
Document number: DS31949 Rev. 3 - 2
1 of 6
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January 2010
© Diodes Incorporated
DMP2069UFY4
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
±10
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
-0.3
⎯
mΩ
|Yfs|
⎯
-1.0
54
69
90
⎯
V
RDS (ON)
-0.55
36
46
60
8
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.5A
VGS = -2.5V, ID = -2.2A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -2.5A
Ciss
Coss
Crss
Rg
⎯
⎯
⎯
⎯
214
104
25
250
⎯
⎯
⎯
⎯
pF
pF
pF
Ω
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9.1
1.5
1.7
80.4
155.1
688.1
423.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nC
nC
nC
ns
ns
ns
ns
TJ = 25°C
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
S
Test Condition
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -10V, ID = -4A
VDS = -10V, VGS = -4.5V,
RD = 2.5Ω, RG = 3.0Ω
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
20
20
VGS = 4.5V
VGS = 3.5V
VGS = 3.0V
VDS = 5V
VGS = 2.5V
15
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
VGS = 2.0V
10
VGS = 1.8V
5
VGS = 1.5V
15
10
5
TA = 150°C
TA = 125°C
0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMP2069UFY4
Document number: DS31949 Rev. 3 - 2
5
2 of 6
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TA = 85°C
T A = 25°C
TA = -55°C
VGS = 1.2V
0
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
January 2010
© Diodes Incorporated
0.14
0.12
VGS = 1.5V
0.10
0.08
VGS = 1.8V
0.06
VGS = 2.5V
0.04
VGS = 4.5V
0.02
0
5
10
15
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.3
1.1
VGS = 4.5V
ID = 10A
VGS = 2.5V
ID = 5A
0.5
-50
T A = 150°C
0.06
T A = 125°C
TA = 85°C
0.04
T A = 25°C
T A = -55°C
0.02
0
0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.5
0.7
VGS = 4.5V
20
1.7
0.9
0.08
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.16
0
5
10
15
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
20
0.10
0.08
VGS = 2.5V
ID = 5A
0.06
0.04
VGS = 4.5V
ID = 10A
0.02
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
20
1.0
18
0.8
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMP2069UFY4
ID = 1mA
0.6
ID = 250µA
0.4
0.2
14
12
10
TA = 25°C
8
6
4
2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMP2069UFY4
Document number: DS31949 Rev. 3 - 2
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www.diodes.com
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
January 2010
© Diodes Incorporated
DMP2069UFY4
10,000
100,000
IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
1,000
Ciss
100
Coss
10,000
T A = 150°C
TA = 125°C
1,000
T A = 85°C
100
10
Crss
T A = 25°C
10
1
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
20
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
f = 1MHz
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 235°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
T J - T A = P * R θJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
10
100
1,000
Ordering Information (Note 7)
Part Number
DMP2069UFY4-7
Notes:
Case
DFN2015H4-3
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
29P = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
29P
YM
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
2010
X
Feb
2
DMP2069UFY4
Document number: DS31949 Rev. 3 - 2
Mar
3
2011
Y
Apr
4
May
5
2012
Z
Jun
6
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
January 2010
© Diodes Incorporated
DMP2069UFY4
Package Outline Dimensions
A3
DFN2015H4-3
Dim Min Max Typ
A
0.40
−
−
A1
0
0.05 0.02
A3
0.13
−
−
b
0.20 0.30 0.25
d
0.30
−
−
D
1.45 1.575 1.50
D2 1.00 1.20 1.10
e
0.50
−
−
E
1.95 2.075 2.00
E2 0.70 0.90 0.80
f
0.60
−
−
L
0.25 0.35 0.30
z
−
− 0.125
All Dimensions in mm
A
NEW PRODUCT
SEATING PLANE
A1
z
D
L
d
e
E2
E
D2
f
b
Suggested Pad Layout
X
Y2
X1
Y1
G
X
Dimensions
C
G
X
X1
Y
Y1
Y2
Value (in mm)
1.00
0.15
0.31
1.30
0.50
1.00
0.65
Y
C
DMP2069UFY4
Document number: DS31949 Rev. 3 - 2
5 of 6
www.diodes.com
January 2010
© Diodes Incorporated
DMP2069UFY4
NEW PRODUCT
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMP2069UFY4
Document number: DS31949 Rev. 3 - 2
6 of 6
www.diodes.com
January 2010
© Diodes Incorporated