DMP2022LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 13mΩ @ VGS = -10V • 16mΩ @ VGS = -4.5V • 22mΩ @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072g (approximate) • • • • • • SO-8 S D S D S D G D TOP VIEW Internal Schematic TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Units V V IDM Value -20 ±12 -10 -8 -35 Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Symbol PD RθJA Value 2.5 50 Unit W °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Steady State TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 3) A A Thermal Characteristics Notes: 1. 2. 3. 4. Device mounted on 2 oz. Copper pads on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMP2022LSS Document number: DS31373 Rev. 5 - 2 1 of 5 www.diodes.com June 2010 © Diodes Incorporated DMP2022LSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) gfs VSD 0.77 8 11 17 28 0.68 -1.1 13 16 22 ⎯ -1.2 V Static Drain-Source On-Resistance -0.6 ⎯ ⎯ ⎯ ⎯ -0.5 VDS = VGS, ID = -250μA VGS = -10V, ID = -10A VGS = -4.5V, ID = -9A VGS = -2.5V, ID = -8A VDS = -10V, ID = -10A VGS = 0V, IS = -3A Ciss Coss Crss RG ⎯ ⎯ ⎯ ⎯ 2444 594 556 2.0 ⎯ ⎯ ⎯ ⎯ Qg ⎯ 28.1 56.9 ⎯ Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 3.4 11.9 7.5 9.9 108.0 76.5 ⎯ ⎯ 15 20 216 153 Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω Test Condition VDS = -10V, VGS = 0V f = 1.0MHz VGS = 0V VDS = 0V, f = 1MHz nC VDS = -10V, VGS = -4.5V, ID = -10A VDS = -10V, VGS = -10V, ID = -10A VDS = -10V, VGS = -10V, ID = -10A VDS = -10V, VGS = -10V, ID = -10A ns VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. 30 30 VDS = -5V Pulsed 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 20 15 10 15 10 5 5 0 20 0 0.5 1.0 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMP2022LSS Document number: DS31373 Rev. 5 - 2 2.0 0 0.5 1 1.5 2 -VGS , GATE SOURCE VOLTAGE (V) 2.5 Fig. 2 Typical Transfer Characteristics 2 of 5 www.diodes.com June 2010 © Diodes Incorporated RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 1.3 VGS = -2.5V ID = -8.0A 1.2 VGS = -4.5V ID = -9.0A 1.1 VGS = -10V ID = -10A 1.0 0.9 0.8 0.7 -50 -25 25 75 100 125 150 0 50 TA, AMBIENT TEMPERATURE (C) Fig. 3 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) DMP2022LSS 0.1 VGS = -2.5V 0.01 1 10 100 -ID, DRAIN CURRENT (A) Fig. 4 On-Resistance vs. Drain Current and Gate Voltage 1.0 -VGS(TH), GATE THRESHOLD VOLTAGE (V) f = 1MHz VGS = 0V C, CAPACITANCE (pF) VGS = -4.5V 0.001 0.1 10,000 Ciss 1,000 Coss Crss 100 VGS = -3.0V 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Total Capacitance 20 0.8 ID = -250µA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature -IS, SOURCE CURRENT (A) 10 1 0.1 0.01 0.001 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage DMP2022LSS Document number: DS31373 Rev. 5 - 2 3 of 5 www.diodes.com June 2010 © Diodes Incorporated DMP2022LSS Ordering Information (Note 7) Part Number DMP2022LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo P2022LS Part no. YY WW Xth week: 01~53 Year: "08" =2008 1 4 0.254 Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMP2022LSS Document number: DS31373 Rev. 5 - 2 4 of 5 www.diodes.com June 2010 © Diodes Incorporated DMP2022LSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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