DMG3414U N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V • 37mΩ @ VGS = 1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) Drain D Gate TOP VIEW Maximum Ratings S G Source Internal Schematic TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State Units V V IDM Value 20 ±8 4.2 3.2 30 Symbol PD RθJA TJ, TSTG Value 0.78 162 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 4) A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s. 4. Repetitive rating, pulse width limited by junction temperature. DMG3414U Document number: DS31739 Rev. 3 - 2 1 of 6 www.diodes.com May 2009 © Diodes Incorporated DMG3414U Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage @TA = 25°C unless otherwise specified TJ = 25°C Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.5 ⎯ mΩ |Yfs| ⎯ 0.9 25 29 37 ⎯ V RDS (ON) ⎯ 19 22 28 7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 8.2A VGS = 2.5V, ID = 3.3A VGS = 1.8V, ID = 2.0A VDS = 10V, ID = 4A Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 829.9 85.3 81.2 9.6 1.5 3.5 8.1 8.3 40.1 9.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC ns ns ns ns S Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 8.2A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω, ID = 1A 5. Short duration pulse test used to minimize self-heating effect. 20 25 VGS = 10V 16 ID, DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 4.5V VGS = 3.0V 15 VDS = -5V 12 VGS = 2.5V VGS = 2.0V 10 VGS = 1.5V 5 8 T A = 150°C 4 TA = 125°C T A = 85°C TA = 25°C 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG3414U Document number: DS31739 Rev. 3 - 2 2 2 of 6 www.diodes.com 0 0.5 TA = -55°C 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 2 May 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 VGS = 1.8V 0.03 VGS = 2.5V 0.02 VGS = 4.5V 0.01 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.05 VGS = 4.5V 0.04 TA = 150°C TA = 85°C T A = 25°C 0.02 TA = -55°C 0.01 0 20 0 8 12 16 ID, DRAIN CURRENT (A) 20 0.05 1.6 VGS = 2.5V ID = 5A 1.4 VGS = 4.5V ID = 6.5A 1.2 1.0 0.8 0.6 -50 0.04 VGS = 2.5V ID = 5A 0.03 VGS = 4.5V ID = 6.5A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.0 10 IS, SOURCE CURRENT (A) 0.8 4 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature RDSON , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 125°C 0.03 1.8 VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG3414U ID = 250µA 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG3414U Document number: DS31739 Rev. 3 - 2 TA = 25°C 1 0.1 0.01 0.4 3 of 6 www.diodes.com 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.0 May 2009 © Diodes Incorporated DMG3414U 10,000 100,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) 1,000 Ciss Coss 100 Crss 10,000 T A = 125°C 1,000 T A = 85°C 100 TA = 25°C 10 TA = -55°C 1 10 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 0 20 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 166°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 Ordering Information 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response Part Number DMG3414U-7 Notes: 10 100 1,000 (Note 6) Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM NEW PRODUCT T A = 150°C MN8 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMG3414U Document number: DS31739 Rev. 3 - 2 Mar 3 MN8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 4 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D May 2009 © Diodes Incorporated DMG3414U Package Outline Dimensions A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm NEW PRODUCT B C H K M K1 D F J L G Suggested Pad Layout Y Z C X DMG3414U Document number: DS31739 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com May 2009 © Diodes Incorporated DMG3414U IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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