DIODES ZXTN07045EFF

ZXTN07045EFF
45V, SOT23F, NPN high gain power transistor
Summary
BVCEO > 45V
BVECO > 6V
IC(cont) = 4A
VCE(sat) < 80mV @ 1A
RCE(sat) = 50m⍀
PD = 1.5W
Complementary part number ZXTP07040DFF
Description
C
This low voltage NPN transistor has been designed for applications
requiring high gain and very low saturation voltage. The SOT23F
package is pin compatible with the industry standard SOT23 footprint
but offers lower profile and higher dissipation for applications where
power density is of utmost importance.
B
Features
E
•
Low profile SOT23F package
•
Low saturation voltage
•
High gain
•
High power dissipation
E
Applications
C
•
Boost converters
•
Lamp and relay driver
•
Siren driver
•
MOSFET and IGBT gate driving
•
Motor drive
B
Pinout - top view
Ordering information
Device
ZXTN07045EFFTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
8
3000
Device marking
1D4
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ZXTN07045EFF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
45
V
Collector-emitter voltage
VCEO
45
V
Emitter-collector voltage (reverse blocking)
VECO
6
V
Emitter-base voltage
VEBO
7
V
Continuous collector current(c)
IC
4
A
Base current
IB
1
A
Peak pulse current
ICM
6
A
Power dissipation at Tamb=25°C(a)
PD
0.84
W
6.72
mW/°C
1.34
W
10.72
mW/°C
1.50
W
12.0
mW/°C
2.0
W
16.0
mW/°C
Tj, Tstg
- 55 to 150
°C
Linear derating factor
Power dissipation at
PD
Tamb=25°C(b)
Linear derating factor
PD
Power dissipation at Tamb=25°C(c)
Linear derating factor
PD
Power dissipation at Tamb=25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
ambient(a)
R⍜JA
149
°C/W
Junction to ambient(b)
R⍜JA
93
°C/W
Junction to ambient(c)
R⍜JA
83
°C/W
Junction to ambient(d)
R⍜JA
60
°C/W
Junction to
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTN07045EFF
Characteristics
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ZXTN07045EFF
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Symbol
BVCBO
Min.
45
Typ.
160
Max.
Unit
V
Conditions
IC = 100␮A
BVCEO
45
60
V
IC = 10mA (*)
BVEBO
7
8.3
V
IE = 100␮A
BVECX
6
8.2
V
IE = 100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown BVECO
voltage (base open)
Collector-base cut-off current ICBO
6
7.2
V
IE = 100␮A,
<1
50
20
nA
␮A
VCB = 35V
VCB = 35V, Tamb= 100°C
Emitter-base cut-off current
IEBO
<1
50
nA
VEB = 5.6V
Collector-emitter saturation
voltage
VCE(sat)
45
70
mV
IC = 0.1A, IB = 0.5mA(*)
160
230
mV
IC = 1A, IB = 5mA(*)
60
80
mV
IC = 1A, IB = 100mA(*)
200
270
mV
IC = 2A, IB = 20mA(*)
230
280
mV
IC = 4A, IB = 80mA(*)
1000
1100
mV
IC = 4A, IB = 80mA(*)
875
1000
mV
IC = 4A, VCE = 2V(*)
500
800
1500
400
710
IC = 1A, VCE = 2V(*)
250
530
IC = 2A, VCE = 2V(*)
70
125
IC = 4A, VCE = 2V(*)
150
190
MHz
pF
VEB = 0.5V, f = 1MHz(*)
pF
VCB = 10V, f = 1MHz(*)
VCC = 10V.
IC = 500mA,
IB1 = IB2= 50mA.
Base-emitter saturation
VBE(sat)
voltage
Base-emitter turn-on voltage VBE(on)
Static forward current
transfer ratio
hFE
IC = 0.1A, VCE = 2V(*)
Transition frequency
fT
Input capacitance
Cibo
225
Output capacitance
Cobo
18.4
Delay time
td
22.3
ns
Rise time
tr
10.6
ns
Storage time
ts
613
ns
Fall time
tf
146
ns
25
IC = 50mA, VCE = 5V
f = 50MHz
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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ZXTN07045EFF
Typical characteristics
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ZXTN07045EFF
Package outline - SOT23F
c
D
b
e1
b
e
L1
L
E
E1
b
A1
R
A
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.80
1.00
0.0315
0.0394
A1
0.00
0.10
0.00
b
0.35
0.45
c
0.10
D
2.80
e
e1
Millimeters
Inches
Min.
Max.
Max.
Max.
E
2.30
2.50
0.0906
0.0984
0.0043
E1
1.50
1.70
0.0590
0.0669
0.0153
0.0161
E2
1.10
1.26
0.0433
0.0496
0.20
0.0043
0.0079
L
0.48
0.68
0.0189
0.0268
3.00
0.1102
0.1181
L1
0.30
0.50
0.0153
0.0161
R
0.05
0.15
0.0019
0.0059
O
0°
12°
0°
12°
0.95 ref
1.80
Dim.
2.00
0.0374 ref
0.0709
0.0787
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN07045EFF
Intentionally left blank
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ZXTN07045EFF
Definitions
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
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or
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
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© 2007 Published by Zetex Semiconductors plc
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