DIODES ZXTP2008GTC

ZXTP2008G
30V PNP LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = -30V : RSAT = 31m ; IC = -5.5A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
SOT223
• 5.5 Amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Exceptional gain linearity down to 10mA
APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE
ZXTP2008GTA
ZXTP2008GTC
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
7”
12mm
embossed
1,000 units
13”
PINOUT
4,000 units
DEVICE MARKING
ZXTP
2008
TOP VIEW
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ZXTP2008G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV CBO
-50
V
Collector-emitter voltage
BV CEO
-30
V
BV EBO
-7
V
Emitter-base voltage
(a)
IC
-5.5
A
Peak pulse current
I CM
-20
A
Power dissipation at T A =25°C (a)
PD
3.0
W
24
mW/°C
Continuous collector current
Linear derating factor
Power dissipation at T A =25°C (b)
PD
Linear derating factor
Operating and storage temperature range
T j , T stg
1.6
W
12.8
mW/°C
-55 to 150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient (a)
R ⍜JA
42
°C/W
(b)
R ⍜JA
78
°C/W
Junction to ambient
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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ZXTP2008G
CHARACTERISTICS
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
MAX. UNIT CONDITIONS
BV CBO
-50
-70
V
I C = -100␮A
Collector-emitter breakdown voltage BV CER
-50
-70
V
I C = -1␮A, RB < 1k⍀
Collector-emitter breakdown voltage BV CEO
-30
-40
V
I C = -10mA *
Emitter-base breakdown voltage
BV EBO
-7.0
-8.0
V
I E = -100␮A
Collector cut-off current
I CBO
Collector cut-off current
<1
<1
I CER
R < 1k⍀
-20
nA
V CB = -40V
-0.5
␮A
V CB = -40V, Tamb = 100°C
-20
nA
V CB = -40V
-0.5
␮A
VCB = -40V, Tamb = 100°C
V EB = -6V
Emitter cut-off current
I EBO
<1
-10
nA
Collector-emitter saturation voltage
V CE(SAT)
-30
-45
mV
I C = -0.5A, I B = -20mA *
-40
-60
mV
-60
-85
mV
I C = -1A, I B = -100mA *
I C = -1A, I B = -20mA *
-70
-90
mV
I C = -2A, I B = -200mA *
-170
-210
mV
I C = -5.5A, I B = -500mA *
-1030 -1130
mV
I C = -5.5A, IB = -500mA *
-900
mV
Base-emitter saturation voltage
V BE(SAT)
Base-emitter turn-on voltage
V BE(ON)
Static forward current transfer ratio
h FE
-1000
I C = -5.5A, V CE = -1V *
100
225
I C = -10mA, V CE = -1V *
I C = -1A, V CE = -1V *
100
200
70
145
I C = -5A, V CE = -1V *
10
20
I C = -20A, V CE = -1V *
I C = -100mA, V CE = -10V
300
Transition frequency
fT
110
Output capacitance
C OBO
83
pF
t ON
43
ns
t OFF
230
f = 50MHz
Switching times
V CB = -10V, f = 1MHz *
I C = -1A, V CC = -10V,
I B1 = I B2 = -100mA
NOTES
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
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ZXTP2008G
TYPICAL CHARACTERISTICS
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PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
A1
0.02
0.10
0.0008
0.004
e1
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
2.30 BSC
4.60 BSC
Min
Max
0.0905 BSC
0.181 BSC
© Zetex Semiconductors plc 2005
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