DIODES ZXTN2010ASTOA

ZXTN2010A
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY
BVCEO = 60V : RSAT = 34m ; IC = 4.5A
DESCRIPTION
Packaged in the E-line outline this new low saturation 60V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
• Extemely low equivalent on-resistance; RSAT = 34m at 5A
E-LINE
• 4.5 amps continuous current
• Up to 15 amps peak current
• Very low saturation voltages
APPLICATIONS
• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC modules
• Backlight inverters
ORDERING INFORMATION
DEVICE
ZXTN2010ASTOA
ZXTN2010ASTZ
QUANTITY
2000 units / reel
2000 units / carton
DEVICE MARKING
ZXT
N20
10
PINOUT
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SEMICONDUCTORS
ZXTN2010A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector-base voltage
BV CBO
150
V
Collector-emitter voltage
BV CEO
60
V
BV EBO
7
V
A
Emitter-base voltage
(a)
LIMIT
UNIT
IC
4.5
Peak pulse current
I CM
15
A
Practical power dissipation (a)
PD
1.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
8
mW/°C
PD
0.71
W
5.7
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
Continuous collector current
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient
(a)
Junction to ambient
(b)
VALUE
UNIT
R ⍜JA
125
°C/W
R ⍜JA
175
°C/W
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b For a device mounted in a socket in still air conditions. Collector lead length 10mm.
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SEMICONDUCTORS
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ZXTN2010A
CHARACTERISTICS
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Collector-base breakdown voltage
BV CBO
150
190
V
I C =100␮A
Collector-emitter breakdown voltage
BV CER
150
190
V
I C =1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
60
80
V
I C =10mA*
Emitter-base breakdown voltage
BV EBO
7
8.1
V
I E =100␮A
Collector cut-off current
I CBO
50
nA
V CB =120V
0.5
␮A
VCB=120V, Tamb=100⬚C
Collector cut-off current
I CER
100
nA
V CB =120V
Rⱕ1k⍀
0.5
␮A
VCB=120V, Tamb=100⬚C
V EB =6V
Emitter cut-off current
I EBO
Collector-emitter saturation voltage
V CE(SAT)
Base-emitter saturation voltage
V BE(SAT)
Base-emitter turn-on voltage
V BE(ON)
Static forward current transfer ratio
h FE
10
nA
18
30
mV
I C =100mA, I B =5mA*
40
55
mV
IC=1A, IB=100mA*
45
65
mV
IC=1A, IB=50mA*
95
130
mV
IC=2A, IB=50mA*
170
210
mV
IC=5A, IB=200mA*
950
1050
mV
I C =4A, I B =200mA*
840
950
mV
I C =4A, V CE =1V*
I C =10mA, V CE =1V*
100
200
100
200
55
105
20
40
130
IC=2A, VCE=1V*
300
IC=5A, VCE=1V*
IC=10A, VCE=1V*
MHz I C =100mA, VCE =10V
Transition frequency
fT
Output capacitance
C OBO
31
pF
V CB =10V, f=1MHz*
Switching times
t ON
42
ns
t OFF
760
ns
I C =1A, V CC =10V,
I B1 =I B2 =100mA
f=50MHz
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
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ZXTN2010A
TYPICAL CHARACTERISTICS
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ZXTN2010A
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Min
Max
Min
Max
A
0.41
0.495
0.016
0.0195
B
0.41
0.495
0.016
0.0195
C
3.61
4.01
0.142
0.158
D
4.37
4.77
0.172
0.188
E
2.16
2.41
0.085
0.095
F
—
2.50
—
0.098
G
1.27 NOM
L
13.00
13.97
0.050 NOM
0.512
0.550
© Zetex Semiconductors plc 2005
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