DIODES ZX5T851GTC

ZX5T851G
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = 60V : RSAT = 35m ; IC = 6A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 60V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
• Extremely low equivalent on-resistance; RSAT = 35mV at 6A
SOT223
• 6 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 10 amps
APPLICATIONS
• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC Modules
• Backlight Inverters
PINOUT
ORDERING INFORMATION
DEVICE
ZX5T851GTA
ZX5T851GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
QUANTITY PER
REEL
12mm
1000 units
embossed
4000 units
TOP VIEW
DEVICE MARKING
• X5T851
ISSUE 2 - SEPTEMBER 2003
1
SEMICONDUCTORS
ZX5T851G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-base voltage
BV CBO
150
Collector-emitter voltage
BV CEO
60
V
Emitter-base voltage
BV EBO
7
V
Continuous collector current (a)
IC
6
A
Peak pulse current
I CM
20
A
Power dissipation at T A =25°C (a)
PD
3.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
24
mW/°C
PD
1.6
W
12.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
SYMBOL
(a)
R ⍜JA
VALUE
UNIT
42
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - SEPTEMBER 2003
SEMICONDUCTORS
2
ZX5T851G
CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2003
3
SEMICONDUCTORS
ZX5T851G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
150
190
MAX. UNIT CONDITIONS
V
I C =100␮A
I C =1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CER
150
190
V
Collector-emitter breakdown voltage
BV CEO
60
80
V
I C =10mA*
Emitter-base breakdown voltage
BV EBO
7
8.1
V
I E =100␮A
Collector cut-off current
I CBO
Collector cut-off current
20
nA
V CB =120V
0.5
␮A
VCB=120V,Tamb=100⬚C
I CER
20
nA
V CB =120V
R ⱕ 1k⍀
0.5
␮A
VCB=120V,Tamb=100⬚C
V EB =6V
Emitter cut-off current
I EBO
Collector-emitter saturation voltage
V CE(SAT)
10
nA
20
30
mV
I C =100mA, I B =5mA*
45
60
mV
IC=1A, IB=100mA*
50
70
mV
IC=1A, IB=50mA*
100
135
mV
IC=2A, IB=50mA*
IC=6A, IB=300mA*
210
260
mV
Base-emitter saturation voltage
V BE(SAT)
1000
1100
mV
I C =6A, I B =300mA*
Base-emitter turn-on voltage
V BE(ON)
940
1050
mV
I C =6A, V CE =1V*
Static forward current transfer ratio
H FE
100
200
100
200
55
105
IC=5A, VCE=1V*
20
40
IC=10A, VCE=1V*
130
I C =10mA, V CE =1V*
IC=2A, VCE=1V*
300
MHz I C =100mA, V CE =10V
Transition frequency
fT
Output capacitance
C OBO
31
pF
V CB =10A, f=1MHz*
Switching times
t ON
42
ns
t OFF
760
I C =1A, V CC =10V,
I B1 =I B2 =100mA
f=50MHz
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
ISSUE 2 - SEPTEMBER 2003
SEMICONDUCTORS
4
ZX5T851G
TYPICAL CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2003
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SEMICONDUCTORS
ZX5T851G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
b2
2.90
3.10
0.114
0.122
C
0.23
0.33
0.009
0.013
D
6.30
6.70
0.248
0.264
6.70
7.30
0.264
0.287
E1
3.30
3.70
0.130
0.146
L
0.90
-
0.355
-
-
-
-
-
-
© Zetex plc 2003
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ISSUE 2 - SEPTEMBER 2003
SEMICONDUCTORS
6