NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK http://onsemi.com Features •Planar HD3e Process for Fast Switching Performance •Low RDS(on) to Minimize Conduction Loss •Low Ciss to Minimize Driver Loss •Low Gate Charge •Optimized for High Side Switching Requirements in 14 AMPERES, 25 VOLTS RDS(on) = 70.4 mW (Typ) N-CHANNEL High-Efficiency DC-DC Converters •Pb-Free Packages are Available D G MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Value Unit Drain-to-Source Voltage VDSS 25 Vdc Gate-to-Source Voltage - Continuous VGS ±20 Vdc Thermal Resistance - Junction-to-Case Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C, Chip - Continuous @ TA = 25°C, Limited by Package - Single Pulse (tp ≤ 10 ms) RqJC PD ID ID ID 6.0 20.8 14 11.4 28 °C/W W A A A Thermal Resistance, Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C RqJA 80 °C/W PD ID 1.56 3.1 W A Thermal Resistance, Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C RqJA 120 °C/W PD ID 1.04 2.5 W A Operating and Storage Temperature Range TJ, Tstg -55 to 150 °C Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C S 4 4 1 2 1 3 2 3 CASE 369D DPAK-3 (Straight Lead) STYLE 2 CASE 369C DPAK (Surface Mount) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain 1 Gate Y WW 14N03 G 2 Drain YWW T14 N03G 4 Drain Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 0.5 sq. in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. YWW T14 N03G Parameter 3 Source 1 Gate = Year = Work Week = Device Code = Pb-Free Package 3 Source 2 Drain ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev. 5 1 Publication Order Number: NTD14N03R/D NTD14N03R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristics Symbol Min Typ Max Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(br)DSS 25 - 28 - - - - 1.0 10 - - ±100 1.0 - 1.5 - 2.0 - - 117 70.4 130 95 - 7.0 - Ciss - 115 - Coss - 62 - Crss - 33 - td(on) - 3.8 - tr - 27 - td(off) - 9.6 - tf - 2.0 - QT - 1.8 - Q1 - 0.8 - Q2 - 0.7 - - 0.93 0.82 1.2 - trr - 6.6 - ta - 4.75 - tb - 1.88 - QRR - 0.002 - Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 3) (VGS = 4.5 Vdc, ID = 5 Adc) (VGS = 10 Vdc, ID = 5 Adc) RDS(on) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 5 Adc) Vdc mV/°C mW gFS Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time (VGS = 10 Vdc, VDD = 10 Vdc, ID = 5 Adc, RG = 3 W) Fall Time Gate Charge (VGS = 5 Vdc, ID = 5 Adc, VDS = 10 Vdc) (Note 3) ns nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 5 Adc, VGS = 0 Vdc) (Note 3) (IS = 5 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 VSD Vdc ns mC NTD14N03R 10 V 14 8V 12 7V 6V 10 VDS ≥ 10 V 5V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 14 4.5 V 8 4V 6 3.5 V 4 3V 2 12 10 8 6 TJ = 25°C 4 TJ = 125°C 2 TJ = -55°C VGS = 2.5 V 0 0 2 4 6 10 8 0 1 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.20 VGS = 10 V 0.16 0.12 TJ = 125°C 0.08 TJ = 25°C TJ = -55°C 0.04 0 0 2 4 6 8 10 12 14 6 0.20 TJ = 125°C 0.16 TJ = 25°C 0.12 TJ = -55°C 0.08 0.04 VGS = 4.5 V 0 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Temperature 1000 1.8 1.6 VGS = 0 V ID = 5 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 1.4 1.2 1 TJ = 150°C 100 TJ = 125°C 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 25 200 TJ = 25°C VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) NTD14N03R Ciss 160 Crss Ciss 120 80 Coss 40 Crss 0 10 VGS 0 VDS 5 5 10 15 20 6 QT VGS Q2 Q1 4 2 ID = 5 A TJ = 25°C 0 0 0.4 0.8 1.2 1.6 2.0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 70 IS, SOURCE CURRENT (AMPS) VDS = 10 V ID = 5 A VGS = 10 V tr t, TIME (ns) 8 10 td(off) td(on) tf VGS = 0 V 60 50 40 30 TJ = 150°C 20 10 1 TJ = 25°C 0 1 10 100 0 0.2 0.4 0.6 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 1.0 ORDERING INFORMATION Package Shipping† DPAK 75 Units / Rail DPAK (Pb-Free) 75 Units / Rail NTD14N03R-001 DPAK-3 75 Units / Rail NTD14N03R-1G DPAK-3 (Pb-Free) 75 Units / Rail DPAK 2500 Tape & Reel DPAK (Pb-Free) 2500 Tape & Reel Device NTD14N03R NTD14N03RG NTD14N03RT4 NTD14N03RT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTD14N03R PACKAGE DIMENSIONS DPAK (SINGLE GAUGE / SURFACE MOUNT) CASE 369C ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --0.035 0.050 0.155 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --0.89 1.27 3.93 --- NTD14N03R DPAK-3 (SINGLE GAUGE / SRAIGHT LEAD) CASE 369D-01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 -TSEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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