DMN2170U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance • 70mΩ @VGS = 4.5V • 100mΩ @VGS = 2.5V • 170mΩ @VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 6) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • Drain SOT-23 D Gate ESD PROTECTED TO 3kV Gate Protection Diode TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings S G Source @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4) Symbol VDSS VGSS ID IDM Value 20 ±12 2.3 8 Units V V A A Symbol PD RθJA TJ, TSTG Value 600 208 -55 to +150 Units mW °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 ⎯ ⎯ 28 ⎯ ⎯ ⎯ 1 ±10 V μA μA VGS = 0V, ID = 10μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.45 ⎯ 1.0 V RDS (ON) ⎯ 50 70 125 70 100 170 mΩ VDS = VGS, ID = 250μA VGS = 4.5V, ID = 3A VGS = 2.5V, ID = 2.3A |Yfs| VSD ⎯ ⎯ 6 0.7 ⎯ 0.9 S V VGS = 1.5V, ID = 0.5A VDS =5V, ID = 2.4A VGS = 0V, IS = 1.05A Ciss Coss Crss ⎯ ⎯ ⎯ 217 62 34 ⎯ ⎯ ⎯ pF pF pF VDS = 10V, VGS = 0V f = 1.0MHz 1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. 2. No purposefully added lead. Halogen and Antimony Free. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Repetitive rating, pulse width limited by junction temperature. 5. Short duration pulse test used to minimize self-heating effect. 6. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. DMN2170U Document number: DS31182 Rev. 4 - 2 1 of 4 www.diodes.com June 2008 © Diodes Incorporated DMN2170U 10 8 NEW PRODUCT 6 4 2 0 0.5 1,000 VGS = 1.5V 0.4 C, TOTAL CAPACITANCE (pF) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) f = 1MHz 0.3 0.2 0.1 VGS = 2.5V Ciss 100 Coss Crss VGS = 4.5V 10 0 0 1 2 3 4 5 6 ID, DRAIN-SOURCE CURRENT Fig. 3 On-Resistance vs. Drain-Source Current & Gate Voltage 0 7 1.8 RDS(ON) STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS(TH), GATE THRESHOLD VOLTAGE (V) ID = 250µA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation with Ambient Temperature DMN2170U Document number: DS31182 Rev. 4 - 2 20 Fig. 4 Typical Total Capacitance 1 0.8 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) 2 of 4 www.diodes.com 1.6 VGS = 2.5V ID = 2.3A 1.4 VGS = 4.5V ID = 3A 1.2 VGS = 1.5V ID = 0.5A 1.0 0.8 0.6 -55 25 85 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature June 2008 © Diodes Incorporated NEW PRODUCT DMN2170U 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 7) Part Number DMN2170U-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 21N Date Code Key (If Applicable) Year 2007 Code U Month Code Jan 1 YM Marking Information 21N = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 2008 V Feb 2 Mar 3 2009 W Apr 4 May 5 2010 X Jun 6 Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D Package Outline Dimensions A SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0° 8° α All Dimensions in mm B C TOP VIEW G H K J M D DMN2170U Document number: DS31182 Rev. 4 - 2 F L 3 of 4 www.diodes.com June 2008 © Diodes Incorporated DMN2170U Suggested Pad Layout Y NEW PRODUCT Z G C X E Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2170U Document number: DS31182 Rev. 4 - 2 4 of 4 www.diodes.com June 2008 © Diodes Incorporated