DIODES DMP3030SN-7

DMP3030SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
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Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Case: SC-59
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
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Drain
SC-59
D
Gate
ESD protected
TOP VIEW
Gate
Protection
Diode
S
G
Source
Internal Schematic
EQUIVALENT CIRCUIT
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady State
Pulsed Drain Current (Note 3)
Thermal Characteristics
Symbol
VDSS
VGSS
ID
IDM
Unit
V
V
A
A
Value
500
250
-65 to +150
Unit
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Value
-30
±20
-0.7
-2.8
Symbol
Pd
RθJA
Tj, TSTG
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
⎯
⎯
⎯
⎯
⎯
⎯
-10
±10
V
μA
μA
VGS = 0V, ID = -250mA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
-1.0
RDS (ON)
⎯
-3.0
0.25
0.45
V
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
|Yfs|
VSD
⎯
⎯
⎯
0.20
0.35
1
-0.8
⎯
-1.1
S
V
VDS = -10V, ID = -1.0mA
VGS = -10V, ID = -0.4A
VGS = -4.5V, ID = -0.4A
VDS = -10V, ID = 0.4A
VGS = 0V, IS = -0.7A
Ciss
Coss
Crss
⎯
⎯
⎯
160
120
50
⎯
⎯
⎯
pF
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
tD(ON)
tD(OFF)
tr
tf
⎯
⎯
⎯
⎯
10
25
25
40
⎯
⎯
⎯
⎯
ns
ns
ns
ns
VDD = -10V, ID = -0.4A,
VGS = -5.0V, RGEN = 50Ω
Notes:
1.
2.
3.
4.
5.
Ω
Test Condition
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMP3030SN
Document number: DS30787 Rev. 3 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated
DMP3030SN
3
3
-10V
-5V
VDS = 10V
-4.5V
2.5
-4V
2.5
TA = 25°C
2
2
NEW PRODUCT
-3.5V
1.5
1.5
1
1
-3V
TJ = 125°C
0.5
0.5
T J = 25°C
VGS = -2.5V
0
0
0
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0
TJ = -55°C
1
2
3
4
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
1
0.8
T J = 25°C
0.6
ID = -0.4A
ID = -0.7A
VGS = -4.5V
0.4
VGS = -10V
0.2
0
0
2
4
6
8
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 3 On-Resistance vs. Gate Voltage
0.1
0
10
0.8
0.5
1
1.5
2
2.5
-ID, DRAIN CURRENT (A)
Fig. 4 On-Resistance vs. Drain Current
3
2
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
1.8
1.6
0.6
1.4
ID = -0.4A, -0.7A
0.4
1.2
1
VGS = -4.5V
0.8
0.6
0.2
ID = -0.7A
0.4
VGS = -10V
0.2
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMP3030SN
Document number: DS30787 Rev. 3 - 2
2 of 4
www.diodes.com
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Gate-Source Threshold Voltage with Temperature
November 2007
© Diodes Incorporated
DMP3030SN
1,000
NEW PRODUCT
f = 1MHz
VGS = 0V
TA = 25°C
CISS
100
COSS
CRSS
10
Ordering Information
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Typical Total Capacitance
30
(Note 6)
Part Number
DMP3030SN-7
Notes:
0
Case
SC-59
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
PS2
Date Code Key
Year
Code
2006
T
YM
Marking Information
2007
U
PS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Package Outline Dimensions
A
B C
TOP VIEW
G
H
K
J
M
N
D
E
DMP3030SN
Document number: DS30787 Rev. 3 - 2
L
SC-59
Dim
Min
Max
A
0.35
0.50
B
1.50
1.70
C
2.70
3.00
D
0.95
E
⎯
⎯
G
1.90
H
2.90
3.10
J
0.013
0.10
K
1.00
1.30
L
0.35
0.55
M
0.10
0.20
N
0.70
0.80
0°
8°
α
All Dimensions in mm
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November 2007
© Diodes Incorporated
DMP3030SN
Suggested Pad Layout
Y
NEW PRODUCT
Z
G
C
X
Dimensions Value (in mm)
Z
4.0
G
1.2
X
0.9
Y
1.4
C
2.6
E
0.95
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMP3030SN
Document number: DS30787 Rev. 3 - 2
4 of 4
www.diodes.com
November 2007
© Diodes Incorporated