T2800D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • Blocking Voltage to 400 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Four Quadrant Gating • Device Marking: Logo, Device Type, e.g., T2800D, Date Code http://onsemi.com TRIACS 8 AMPERES RMS 400 VOLTS MT2 MT1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating G Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = –40 to +125°C, Gate Open) VDRM, VRRM 400 Volts On–State RMS Current (All Conduction Angles, TC = +80°C) IT(RMS) 8.0 Amps ITSM 100 Amps I2t 40 A2s PGM 16 Watts PG(AV) 0.35 Watt IGM 4.0 Amps Peak Non–Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = +80°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width = 10 µs, TC = +80°C) Average Gate Power (t = 8.3 ms, TC = +80°C) Peak Gate Current (Pulse Width = 10 µs, TC = +80°C) Operating Junction Temperature Range Storage Temperature Range 4 1 PIN ASSIGNMENT TJ – 40 to +125 °C Tstg – 40 to +150 °C 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device T2800D February, 2000 – Rev. 3 3 TO–220AB CASE 221A STYLE 4 (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Semiconductor Components Industries, LLC, 1999 2 1 Package Shipping TO220AB 500/Box Publication Order Number: T2800/D T2800D THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RθJC 2.2 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit — — — — 10 2.0 µA mA — 1.7 2.0 Volts OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TC = 25°C TC = 100°C IDRM, IRRM ON CHARACTERISTICS Peak On-State Voltage(1) (IT = 30 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) IGT Gate Trigger Voltage (Continuous dc) (All Quadrants) (VD = 12 Vdc, RL = 100 Ohms) Gate Non–Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ohms, TC = 100°C) " Holding Current (VD = 12 Vdc, Initiating Current = "200 mA, Gate Open) Gate Controlled Turn-On Time (VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs) mA — — — — 10 20 15 30 25 60 25 60 VGT — 1.25 2.5 Volts VGD 0.2 — — Volts IH — 15 30 mA tgt — 1.6 — µs dv/dt(c) — 10 — V/µs dv/dt 60 — — V/µs DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C) (1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 T2800D Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Forward Blocking Current VRRM IRRM VTM IH VTM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 – Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 (–) MT2 Quadrant III Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) T2800D 95 P(AV) , AVERAGE POWER DISSIPATION (WATTS) 100 FULL CYCLE SINUSOIDAL WAVEFORM 90 85 80 0 2 4 6 8 12 10 FULL CYCLE SINUSOIDAL WAVEFORM 8 MAXIMUM TYPICAL 6 4 2 0 0 2 4 6 8 IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Current Derating Figure 2. Power Dissipation http://onsemi.com 4 10 12 T2800D PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z –T– B F T SEATING PLANE C S 4 Q A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 4: PIN 1. 2. 3. 4. http://onsemi.com 5 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 T2800D Notes http://onsemi.com 6 T2800D Notes http://onsemi.com 7 T2800D ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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