MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE CM200DY-24A ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 23 23 17 C1 12 12 G1 E1 12 2-φ6.5 MOUNTING HOLES 4 13 48 20 (14) E2 18 C2E1 E2 G2 4 17 3-M5 NUTS 4 80±0.25 7 16 C2E1 E2 21.2 29 +0.1 –0.5 LABEL C1 G1 E1 16 7.5 7 E2 G2 TAB #110. t=0.5 16 CIRCUIT DIAGRAM Mar. 2004 MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — (Tj = 25°C) Parameter ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG G-E Short C-E Short DC, TC = 84°C*1 Pulse Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage (Note 2) Main terminal to base plate, AC 1 min. Main terminal M5 Mounting holes M6 Typical value Unit V V A A W °C °C V N•m g (Tj = 25°C) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance (Note 2) Pulse TC = 25°C*1 VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 20mA, VCE = 10V 6 7 8 V — — — — — — — — — — — — — — — — — 1.6 — 2.1 2.4 — — — 1000 — — — — — 9.0 — — — 0.022 — 0.5 3.0 — 35 3 0.68 — 130 100 450 350 150 — 3.8 0.093 0.17 — 21 µA Test conditions Parameter Thermal resistance Ratings 1200 ±20 200 400 200 400 1340 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 VGE = VGES, VCE = 0V Tj = 25°C IC = 200A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6Ω, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to fin, Thermal compound Applied (1/2 module)*1,*2 Unit mA V nF nC ns ns µC V °C/W Ω *1 : Tc, Tf measured point is just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Mar. 2004 MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 350 Tj = 25°C 15 13 12 300 250 200 11 150 100 10 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 20V 9 2 0 4 6 8 10 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 200 250 300 350 400 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 103 Tj = 25°C 7 8 6 IC = 400A 4 IC = 200A 2 5 3 2 102 7 5 3 2 Tj = 25°C Tj = 125°C IC = 80A 0 6 8 10 12 14 16 18 101 20 4 5 103 Coes Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME (ns) Cies 100 3 2 3 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 7 5 7 5 2 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 101 3 2 1 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 3 2 0 GATE-EMITTER VOLTAGE VGE (V) 102 CAPACITANCE Cies, Coes, Cres (nF) 4 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 400 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) 7 td(off) 5 tf 3 2 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Mar. 2004 MITSUBISHI IGBT MODULES CM200DY-24A REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 Irr 102 trr 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 2 3 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c’) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC’ = 25°C 3 Under the chip 2 10–1 10–1 7 5 3 2 7 5 3 2 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.093°C/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.17°C/W –3 10 102 7 7 Esw(off) Esw(on) 3 2 100 1 10 2 3 5 7 102 2 3 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 102 5 3 Esw(off) 2 101 Conditions: VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive load C snubber at bus 7 5 3 2 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 Conditions: Err 7 5 3 2 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V IE = 200A Tj = 125°C Inductive load C snubber at bus 7 VCC = 600V 5 VGE = ±15V 3 RG = 1.6Ω Tj = 125°C 2 Inductive load C snubber at bus 101 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) Esw(on) 5 100 0 10 5 7 103 102 100 1 10 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 7 7 5 3 2 TIME (s) EMITTER CURRENT IE (A) Conditions: VCC = 600V 5 VGE = ±15V 3 RG = 1.6Ω Tj = 125°C 2 Inductive load C snubber at bus 101 10–2 2 3 5 7 103 EMITTER CURRENT IE (A) 5 3 2 101 Err 7 5 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG (Ω) Mar. 2004 MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A VCC = 400V 16 VCC = 600V 12 8 4 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) Mar. 2004