Ordering number:ENN6305 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2011/2SC5564 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2038A Features [2SA2011/2SC5564] · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2 1 0.4 3.0 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) 0.75 Specifications ( ) : 2SA2011 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)15 V Collector-to-Emitter Voltage VCEO VEBO (–12)15 V (–)5 V IC (–)6 A ICP (–)9 Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg A (–)600 mA Mounted on a ceramic board (250mm2×0.8mm) 1.3 W Tc=25˚C 3.5 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)12V, IE=0 (–)0.1 µA Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)0.1 µA DC Current Gain hFE VCE=(–)2V, IC=(–)500mA fT VCE=(–)2V, IC=(–)500mA Gain-Bandwidth Product Output Capacitance Cob 200 VCB=(–)10V, f=1MHz 560 (350) MHz 380 MHz (41)23 pF Continued on next page. Marking : 2SA2011 : AR 2SC5564 : FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21400TS (KOTO) TA-2519 No.6305–1/5 2SA2011/2SC5564 Continued on preceding page. Parameter Symbol Ratings Conditions min max (–)120 (–)180 mV (–190) (–290) mV 200 300 mV (–)0.85 (–)1.2 IC=(–)1.5A, IB=(–)30mA Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage IC=(–)3A, IB=(–)60mA VBE(sat) Collector-to-Base Breakdown Voltage IC=(–)1.5A, IB=(–)30mA V(BR)CBO IC=(–)10µA, IE=0 Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ Emitter-to-Base Breakdown Voltage Turn-ON Time V(BR)EBO ton IE=(–)10µA, IC=0 See specified Test Circuit Storage Time tstg See specified Test Circuit tf See specified Test Circuit Fall Time Unit typ V (–)15 V (–12) V 15 V (–)5 V (35)30 ns (110) ns 190 ns 15 ns Switching Time Test Circuit IB1 PW=20µs D.C.≤1% IB2 OUTPUT INPUT VR RB RL + + 100µF 470µF 50Ω VBE=--5V VCC=5V 20IB1= --20IB2= IC=1.5A (For PNP, the polarity is reversed.) IC -- VCE 2SA2011 50mA 40mA --4 --30mA --20mA --2 --10mA 80mA 30mA 4 mA --40mA 3 20mA 2 10mA 1 --1 IB=0 --0.4 --0.6 --0.8 Collector-to-Emitter Voltage, VCE – V 25°C --3 4 25°C 3 2 --25 ° 0 1.0 IT00116 IC -- VBE 1 C 5°C --2 0.8 5 Collector Current, IC – A --4 0.6 2SC5564 VCE=2V --5 Ta= 7 0.4 6 2SA2011 VCE=--2V --1 0.2 Collector-to-Emitter Voltage, VCE – V IT00115 IC -- VBE --6 IB=0 0 0 --1.0 C --0.2 Ta=7 5° 0 --25°C 0 Collector Current, IC – A mA 60mA 70 100 --80mA --3 IC -- VCE 2SC5564 90mA 5 --50mA --10 0m A Collector Current, IC – A --70mA --60mA --90mA --5 6 Collector Current, IC – A --6 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V --1.2 --1.4 IT00117 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE – V 1.2 1.4 IT00118 No.6305–2/5 2SA2011/2SC5564 hFE -- IC 1000 7 DC Current Gain, hFE 2 25°C --25°C 100 7 5 2 3 5 7 --1.0 2 5 3 2 --100 °C 75 = Ta 5°C --2 3 2 25°C --10 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 2 3 5 7 1.0 2 3 Collector Current, IC – A 5 7 10 IT00120 VCE(sat) -- IC 2SC5564 IC / IB=20 5 3 2 100 7 C 5° =7 Ta C 5° --2 5 3 2 25°C 10 5 0.01 5 7 --10 IT00121 5 3 2 75 °C = Ta 7 C 5° 5 --2 25°C 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC – A 3 2 Ta=--25°C 7 5 75°C 25°C 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 5 7 --10 IT00125 5 7 1.0 2 3 5 7 10 IT00123 2SC5564 IC / IB=50 3 2 100 75 °C 25°C = Ta 7 5 C 5° --2 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC – A 5 7 10 IT00124 VBE(sat) -- IC 2SC5564 IC / IB=50 7 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 3 VCE(sat) -- IC 10 7 2 5 10 0.01 5 7 --10 IT00122 2SA2011 IC / IB=50 --1.0 5 7 0.1 7 VBE(sat) -- IC --10 3 1000 2SA2011 IC / IB=50 --100 2 Collector Current, IC – A VCE(sat) -- IC 7 --0.1 --0.01 5 7 0.1 7 2 --1000 --10 --0.01 3 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 2SA2011 IC / IB=20 7 5 2 1000 5 7 5 --0.01 10 0.01 5 7 --10 IT00119 VCE(sat) -- IC 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 3 Collector Current, IC – A --1000 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 2 5 7 --0.1 --25°C 100 3 3 25°C 2 2 2 Ta=75°C 3 3 10 --0.01 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 Ta=75°C 3 2SC5564 VCE=2V 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV DC Current Gain, hFE 5 hFE -- IC 1000 2SA2011 VCE=--2V 5 3 2 1.0 Ta=--25°C 7 5 25°C 75°C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A 2 3 5 7 10 IT00126 No.6305–3/5 2SA2011/2SC5564 Cob -- VCB 100 2SA2011 f=1MHz 7 3 2 10 7 5 3 5 3 2 10 7 5 3 2 2 2 3 5 1.0 1.0 2 --10 2SA2011 VCE=--2V 3 2 100 7 5 3 5 7 2 10 IT00128 f T -- IC 1000 7 5 2SC5564 VCE=2V 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 s Collector Current, IC – A s 0µ op era tio --1.0 7 5 n 3 2 --0.1 7 5 2SA2011 Tc=25°C Single pulse --0.01 --0.1 2 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Emitter Voltage, VCE – V 3 3 5 7 1.0 2 3 5 7 10 IT00130 1ms 10 10 IC 3 2 ms 0m DC s ope rat 1.0 7 5 ion 3 2 0.1 7 5 2SC5564 Tc=25°C Single pulse 0.01 0.1 2 3 5 7 2 1.0 3 5 7 2 10 Collector-to-Emitter Voltage, VCE – V IT00131 PC -- Ta 2.0 2 ASO 3 2 3 5 7 0.1 s 0µ ms DC 3 ICP 10 7 5 0µ 50 3 2 2 s 0µ 10 10 IC 2 50 --10 7 5 3 2 1ms 100ms 10 7 5 10 ICP 2 Collector Current, IC – A ASO 2 3 1.0 0.01 5 7 --10 IT00129 Collector Current, IC – A 3 2 2 Collector-to-Base Voltage, VCB -- V IT00127 f T -- IC 1000 7 5 Gain-Bandwidth Product, fT – MHz 7 Collector-to-Base Voltage, VCB -- V Gain-Bandwidth Product, fT – MHz 1.0 --1.0 Collector Current, IC – A 2SC5564 f=1MHz 7 Output Capacitance, Cob – pF Output Capacitance, Cob – pF 5 Cob -- VCB 100 IT00132 PC -- Tc 4.0 2SA2011 / 2SC5564 2SA2011 / 2SC5564 Collector Dissipation, PC – W Collector Dissipation, PC – W 3.5 1.5 M 1.3 ou nte do na 1.0 ce ram ic bo ard (25 0m 0.5 m2 ×0 .8m 3.0 2.5 2.0 1.5 1.0 0.5 m) 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT00133 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 IT01536 No.6305–4/5 2SA2011/2SC5564 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. PS No.6305–5/5