1N 5711 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request. DO 35 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Value Repetitive Peak Reverse Voltage 70 V Ta = 25 °C 15 mA Ta = 25°C 430 mW - 65 to 200 - 65 to 200 °C 230 °C Value Unit 400 °C/W Forward Continuous Current* Ptot Power Dissipation* Tstg Tj Storage and Junction Temperature Range TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case IF Unit THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Junction-ambient* ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit VBR Tamb = 25°C IR = 10µA VF * * Tamb = 25°C IF = 1mA 0.41 Tamb = 25°C IF = 15mA 1 Tamb = 25°C VR = 50V 0.2 µA Max. Unit 2 pF 100 ps IR * * 70 V V DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. C Tamb = 25°C VR = 0V f = 1MHz τ Tamb = 25°C IF = 5mA Krakauer Method Typ. * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. August 1999 Ed: 1A 1/3 1N 5711 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Capacitance C versus reverse applied voltage VR (typical values). Figure 3. Reverse current versus ambient temperature. Figure 4. Reverse current versus continuous reverse voltage (typical values). 2/3 1N 5711 PACKAGE MECHANICAL DATA DO 35 Glass DIMENSIONS B A note 1 E B /C O REF. /D O O /D note 2 Millimeters Inches Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 C 12.7 D 0.458 E note 1 0.500 0.558 0.018 0.022 Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 3/3