STPR1520D/F ® ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF(AV) 15 A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns A A K FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY c u d ■ ■ ■ TO-220AC STPR1520D e t le ■ ■ ISOWATT220AC STPR1520F o r P o s b O - DESCRIPTION Low cost single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-220AC and ISOWATT220AC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ) s ( ct ) s t( K u d o Symbol Value Unit Repetitive peak reverse voltage 200 V RMS forward current 30 A 15 A 150 A - 65 to + 150 °C t e l o VRRM IF(RMS) s b O IF(AV) r P e Parameter Average forward current δ = 0.5 TO-220AC Tc = 115°C ISOWATT220AC Tc = 70°C IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Maximum operating junction temperature October 2001 - Ed: 3B Tp = 10 ms Sinusoidal + 150 1/6 STPR1520D/F THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case Value Unit 2 °C/W TO-220AC ISOWATT220AC 4.5 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters Test conditions IR * Reverse leakage current Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Forward voltage drop V 1.20 Tj = 25°C IF = 30 A 1.25 c u d e t le Irr = 0.25A Min. so Typ. IF = 0.5A tfr Tj = 25°C IF = 1A tr = 10 ns VFR = 1.1 x VF 20 VFP Tj = 25°C IF = 1A tr = 10 ns 3 ) s ( ct IR = 1A b O - Fig. 1: Average forward power dissipation versus average forward current. ) s t( o r P Tj = 25°C 2/6 mA IF = 30 A trr s b O 1 Tj = 125°C Test conditions t e l o µA 0.99 RECOVERY CHARACTERISTICS r P e 50 IF = 15 A To evaluate the conduction losses use the following equation : P = 0.78 x IF(AV) + 0.014 x IF2(RMS) u d o Unit Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % Symbol Max. Max. Unit 30 ns Fig. 2: Peak current versus form factor. V STPR1520D/F Fig. 3: Average temperature. current versus ambient Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC) Fig. 4: Average temperature. u d o r P e ambient ) s t( c u d o r P o s b O - Fig. 7: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AC). t e l o versus Fig. 6: Non repetitive surge peak forward current versus overload duration (maximum values) (ISOWATT220AC). e t le ) s ( ct current Fig. 8: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AC). s b O 3/6 STPR1520D/F Fig. 9: Forward voltage drop versus forward current. Fig. 10: Junction capacitance versus reverse voltage applied (typical values). Fig. 11: Recovery charge versus dIF/dt. Fig. 12: Peak reverse current versus dIF/dt. c u d e t le ) s ( ct u d o r P e o s b O - Fig. 13: Dynamic parameters versus junction temperature. t e l o s b O 4/6 o r P ) s t( STPR1520D/F PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. Millimeters Min. A H2 C L5 L7 ØI L6 L2 D L9 F1 L4 M F E G ) s ( ct A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 e t le o s b O - Max. Inches Min. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 c u d o r P Max. ) s t( u d o r P e t e l o s b O 5/6 STPR1520D/F PACKAGE MECHANICAL DATA ISOWATT220AC A H DIMENSIONS B REF. Millimeters Inches Diam Min. Typ. Max. Min. Typ. Max. L6 L7 L2 L3 F1 F D A B D E F F1 G H L2 L3 L6 L7 Diam 4.40 2.50 2.40 0.40 0.75 1.15 4.95 10.00 4.60 2.70 2.75 0.70 1.00 1.70 5.20 10.40 16.00 28.60 15.90 9.00 3.00 E e t le G ) s ( ct 0.173 0.098 0.094 0.016 0.030 0.045 0.195 0.394 0.181 0.106 0.108 0.028 0.039 0.067 0.205 0.409 0.630 30.60 16.40 9.30 3.20 1.125 0.626 0.354 0.118 c u d o r P ) s t( 1.205 0.646 0.366 0.126 o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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