FAIRCHILD FDMS3008SDC

N-Channel Dual CoolTM PowerTrench® SyncFETTM
30 V, 49 A, 2.6 mΩ
Features
„ Dual
CoolTM
General Description
This N-Channel MOSFET is produced using Fairchild
process.
Semiconductor’s
advanced
PowerTrench®
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
Top Side Cooling PQFN package
„ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 28 A
„ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 22 A
„ High performance technology for extremely low rDS(on)
„ SyncFET Schottky Body Diode
Applications
„ RoHS Compliant
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Pin 1
S
S
S
G
D
D
D
D
Power 56
Top
D
5
4 G
D
6
3
D
7
2 S
D
8
1
S
S
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
(Note 4)
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
Ratings
30
Units
V
±20
V
49
140
(Note 1a)
-Pulsed
29
A
200
EAS
Single Pulse Avalanche Energy
(Note 3)
112
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 5)
2.3
V/ns
(Note 1a)
3.3
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
78
Operating and Storage Junction Temperature Range
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
(Top Source)
3.5
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.6
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
°C/W
Package Marking and Ordering Information
Device Marking
3008S
Device
FDMS3008SDC
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
Package
Dual CoolTM Power 56
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
August 2011
FDMS3008SDC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 10 mA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
500
μA
IGSS
Gate to Source Leakage Current, Forward
VGS = 20 V, VDS = 0 V
100
nA
3.0
V
13
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 10 mA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.2
1.9
-5
mV/°C
VGS = 10 V, ID = 28 A
1.8
2.6
VGS = 4.5 V, ID = 22 A
2.7
3.3
VGS = 10 V, ID = 28 A, TJ = 125°C
2.4
3.6
VDS = 5 V, ID = 28 A
144
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1MHz
3400
4520
pF
1115
1485
pF
80
120
pF
Ω
0.7
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
15
27
VDD = 15 V, ID = 28 A,
VGS = 10 V, RGEN = 6 Ω
4.7
10
ns
ns
33
53
ns
tf
Fall Time
3
10
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
46
64
nC
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 28 A
21
29
nC
9.6
nC
4.3
nC
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
VGS = 0 V, IS = 2 A
(Note 2)
0.4
0.8
VGS = 0 V, IS = 28 A
(Note 2)
0.8
1.2
IF = 28 A, di/dt = 300 A/μs
2
V
32
51
ns
39
62
nC
www.fairchildsemi.com
FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25°C unless otherwise noted
RθJC
Thermal Resistance, Junction to Case
(Top Source)
3.5
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.6
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
27
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
34
RθJA
Thermal Resistance, Junction to Ambient
(Note 1e)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1f)
19
RθJA
Thermal Resistance, Junction to Ambient
(Note 1g)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1h)
61
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
13
°C/W
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 112 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 33.4 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
5. ISD ≤ 28 A, di/dt ≤ 210 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC.
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
3
www.fairchildsemi.com
FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Thermal Characteristics
200
4
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 6 V
150
VGS = 4.5 V
100
VGS = 4 V
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
0
0.0
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
VGS = 3.5 V
2
VGS = 4.5 V
1
VGS = 6 V
0
40
80
120
160
200
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
10
ID = 28 A
VGS = 10 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
0
2.0
Figure 1. On Region Characteristics
IS, REVERSE DRAIN CURRENT (A)
TJ = 125 oC
100
TJ = 25 oC
50
TJ = -55 oC
3.0
3.5
6
4
TJ = 125 oC
2
TJ = 25 oC
4
6
8
10
Figure 4. On-Resistance vs Gate to
Source Voltage
150
2.5
ID = 28 A
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
2.0
8
2
200
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 4 V
200
100
10
TJ = 125 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
4.0
VGS = 0 V
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
4
1.2
www.fairchildsemi.com
FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted
5000
ID = 28 A
VDD = 15 V
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 10 V
6
VDD = 20 V
4
2
1000
Coss
Crss
100
0
0
10
20
30
40
f = 1 MHz
VGS = 0 V
40
0.1
50
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
150
40
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
o
RθJC = 1.6 C/W
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.01
0.1
1
10
120
VGS = 10 V
90
VGS = 4.5 V
60
30
Limited by Package
0
25
100
50
150
2000
P(PK), PEAK TRANSIENT POWER (W)
100
ID, DRAIN CURRENT (A)
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
100 μs
1 ms
10
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
10 ms
100 ms
THIS AREA IS
LIMITED BY rDS(on)
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 81 oC/W
DC
TA = 25 oC
0.01
0.01
0.1
1
10
100200
100
10
SINGLE PULSE
RθJA = 81 oC/W
TA = 25 oC
1
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
1000
Figure 12. Single Pulse Maximum
Power Dissipation
5
www.fairchildsemi.com
FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 81 C/W
0.001
0.0005
-4
10
-3
10
-2
10
-1
0
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
6
www.fairchildsemi.com
FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics TJ = 25°C unless otherwise noted
SyncFET Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS3008SDC.
0.01
IDSS, REVERSE LEAKAGE CURRENT (A)
30
25
CURRENT (A)
20
di/dt = 300 A/μs
15
10
5
0
-5
0
50
100
150
200
250
300
0.001
TJ = 100 oC
0.0001
0.00001
TJ = 25 oC
0.000001
0
5
10
15
20
25
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
Figure 14. FDMS3008SDC SyncFET body
diode reverse recovery characteristic
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
TJ = 125 oC
7
www.fairchildsemi.com
FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics (continued)
FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
8
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I55
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
9
www.fairchildsemi.com
FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
PDP SPM™
The Power Franchise®
FlashWriter® *
AccuPower™
FPS™
Power-SPM™
The Right Technology for Your Success™
®
Auto-SPM™
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AX-CAP™*
FRFET®
PowerXS™
®
SM
BitSiC
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CTL™
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™
TinyPower™
Current Transfer Logic™
ISOPLANAR™
TinyPWM™
Saving our world, 1mW/W/kW at a time™
DEUXPEED®
MegaBuck™
TinyWire™
Dual Cool™
SignalWise™
MICROCOUPLER™
TranSiC®
EcoSPARK®
SmartMax™
MicroFET™
TriFault Detect™
EfficentMax™
SMART START™
MicroPak™
TRUECURRENT®*
ESBC™
SPM®
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