MJE13007A SILICON NPN SWITCHING TRANSISTOR ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The MJE13007A is silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. They are inteded for use in motor control, switching regulators etc. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (V BE = -1.5V) 850 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 8 A 16 A IC I CM IB I BM IE Collector Peak Current Base Current 4 A Base Peak Current 8 A Emitter Current 12 A I EM Emitter Peak Current 24 A P tot Total Dissipation at T c ≤ 25 o C 80 W T stg Storage Temperature Tj June 1997 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/4 MJE13007A THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.56 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) V CE = rated V CEV V CE = rated V CEV Emitter Cut-off Current (I C = 0) V EB = 9 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE(sat) ∗ h FE ∗ fT C CBO Test Conditions Collector-Emitter Saturation Voltage Min. o T c = 100 C I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A Typ. Max. Unit 1 5 mA mA 1 mA 400 IB IB IB IB = = = = 0.4 A 1A 2A 1A Base-Emitter Saturation Voltage IC = 2 A IC = 5 A IC = 5 A I B = 0.4 A IB = 1 A IB = 1 A DC Current Gain IC = 2 A IC = 5 A V CE = 5 V V CE = 5 V Transition Frequency I C = 0.5 A Output Capacitance IE = 0 V CE = 10 V V CB = 10 V V T c = 100 o C 1 1.5 3 2 V V V V T c = 100 o C 1.2 1.6 1.5 V V V 8 6 f = 1 MHz 40 30 4 f = 0.1 MHz MHz 110 pF RESISTIVE LOAD Symbol Parameter t on Turn-on Time ts Storage Time tf Fall Time Test Conditions Min. Typ. V CC = 125 V I C = 5 A I B1 = -I B2 = 1 A t p = 25 µs Duty Cycle < 1% Max. Unit 0.7 µs 3 µs 0.7 µs Max. Unit INDUCTIVE LOAD Symbol Parameter Test Conditions Typ. tf Fall Time V CC = 125 V IC = 5 A I B1 = 1 A t p = 25 µs Duty Cycle < 1% 0.3 µs tf Fall Time V CC = 125 V IC = 5 A I B1 = 1 A t p = 25 µs Duty Cycle < 1% T c = 100 o C 0.6 µs * Pulsed: Pulse duration = 300 µs, duty cycle 2 % 2/4 Min. MJE13007A TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L7 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 3/4 MJE13007A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4