BU407 HIGH CURRENT NPN SILICON TRANSISTOR ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ DESCRIPTION The BU407 is a silicon epitaxial planar NPN transistors in Jedec TO-220 plastic package. They are fast switching, high voltage devices foe use in horizontal deflection output stages of medium and small screens MTV receivers with 110o CRT as monochrome computers terminals. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM I CM IB P tot T stg Tj June 1997 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Collector Peak Current (t p = 10 ms) Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 330 330 150 6 7 10 15 4 60 -65 to 150 150 Unit V V V V A A A A W o C o C 1/4 BU407 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.08 o C/W 70 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Test Conditions V CE =330 V V CE =200 V V CE =200 V Emitter Cut-off Current (I C = 0) V EB = 6 V V CE(sat) ∗ Collector-emitter Saturation Voltage IC = 5 A V BE(sat) ∗ Base-emitter Saturation Voltage IC = 5 A Transition-Frequency IC = 1 A f = 1 MHz fT t off ∗∗ I s/b Turn-off Time IC = 5 A Second Breakdown Collector Current V CE = 40 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/4 Min. Typ. o T case = 100 C I B = 0.5 A V CE = 5 V 10 I Bend = 0.5 A t = 10 ms 4 Max. Unit 5 100 1 mA µA mA 1 mA 1 V 1.2 V 16 MHz 0.75 µs A BU407 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L7 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 3/4 BU407 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4