SGSF464 SGSIF464 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTS U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) APPLICATIONS: ■ SWITCH MODE POWER SUPPLIES ■ HORIZONTAL DEFLECTION FOR COLOUR TVS AND MONITORS DESCRIPTION The SGSF464 and SGSIF464 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. 3 3 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Valu e Un it V CES Collector-Emitter Voltage (VBE = 0) 1200 V V CEO Collector-Emitter Voltage (IB = 0) 600 V VEBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 10 A Collector Peak Current (tp < 5 ms) 15 A Base Current 7 A 12 A IC I CM IB I BM Parameter Base Peak Current (tp < 5 ms) o P tot T otal Dissipation at Tc = 25 C T s tg Storage Temperature Tj June 1996 Max. Operating Junction T emperature 125 57 W -65 to 150 o C 150 o C 1/7 SGSF464/SGSIF464 THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case Max R t hj- amb Thermal Resistance Junction-Ambient Max TO-218 ISO WATT218 1 2.2 30 o C/W o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CES Collector Cut-off Current (V BE = 0) V CE = 1200 V 200 µA I CEO Collector Cut-off Current (IB = 0) V EC = 380 V V EC = 600 V 200 2 µA mA I EBO Emitter Cut-off Current (I C = 0) V BE = 7 V 1 mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage I C = 100 mA 600 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 6 A I C = 3.5 A IB = 1.2 A IB = 0.5 A 1.5 1.5 V V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 6 A I C = 3.5 A IB = 1.2 A IB = 0.5 A 1.5 1.5 V V t ON ts tf Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD IC = 6 A v CC = 250 v I B1 = -2 A I B1 = 1 A 0.6 2.45 0.12 1.2 3.5 0.4 µs µs µs t ON ts tf Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD v CC = 250 v IC = 5 A I B1 = -2 A I B1 = 1 A With Antisaturation Network 0.6 1.7 0.12 µs µs µs t ON ts tf Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD IC = 5 A V CC = 250 V V BE (off) = - 5 V I B1 = 1 A 0.6 1.3 0.2 µs µs µs ts tf Storage Time Fall T ime INDUCTIVE LOAD h FE = 5 IC = 5 A V CL = 450 V V BE(off ) = -5 V L = 300 µH R BB = 0.8 Ω 1.4 0.1 ts tf Storage Time Fall T ime INDUCTIVE LOAD h FE = 5 IC = 5 A V CL = 450 V V BE(off ) = -5 V L = 300 µH R BB = 0.8 Ω o T c = 100 C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 2.8 0.2 µs µs 4 0.3 µs µs SGSF464/SGSIF464 Safe Operating AreaThermal Impedance Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Reverse Biased SOA 3/7 SGSF464/SGSIF464 Resistive Load Switching Times Switching Times Percentance Variation 4/7 Resistive Load Switching Times SGSF464/SGSIF464 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A 5/7 SGSF464/SGSIF464 ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. 0.222 MAX. C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 U 4.6 0.090 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 6/7 SGSF464/SGSIF464 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. 7/7