SO642 SMALL SIGNAL NPN TRANSISTOR ■ ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 300 V V CEO Collector-Emitter Voltage (I B = 0) 300 V V EBO Emitter-Base Voltage (I C = 0) IC I CM Collector Current Collector Peak Current o P t ot Total Dissipation at T c = 25 C T stg St orage Temperature Tj March 1996 Max. Operating Junction Temperature 6 V 0.1 A 0.3 A 310 mW -65 to 150 o C 150 o C 1/4 SO642 THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max o 450 320 o C/W C/W • Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s Min. V CB = 200 V Typ . Max. Un it 100 nA V ( BR)CBO ∗ Collector-Emitter Breakdown Voltage (I E = 0) I C = 100 µA 300 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 1 mA 300 V 6 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 20 mA I B = 2 mA 0.5 V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 20 mA I B = 2 mA 0.9 V DC Current G ain I C = 1 mA I C = 10 mA I C = 30 mA Transition F requency I C = 10 mA VCE = 20 V f = 50 MHz Collector Base Capacitance V CE = 20 V h FE∗ fT C CB ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 VCE = 10 V V CE = 10 V V CE = 10 V f = 1MHz 25 40 40 50 MHz 3 pF SO642 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 SO642 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4