STZT5401 MEDIUM POWER AMPLIFIER ADVANCE DATA ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE 2 1 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (I E = 0) Parameter -180 V V CEO Collector-Emitter Voltage (I B = 0) -160 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -0.6 A P tot Total Dissipation at T c = 25 o C -1.5 W T stg Storage Temperature IC Tj Max. Operating Junction Temperature October 1997 -65 to 150 o C 150 o C 1/4 STZT5401 THERMAL DATA R t hj-amb • R thj-tab • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max o 62.5 8 o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) V CB = -120 V -50 nA I EBO Emitter Cut-off Current (I E = 0) V EB = -3 V -50 nA Collector-Base Breakdown Voltage (IE = 0) I C = -100 µA -160 V I C = -1 mA -150 V -5 V V (BR)CBO V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I C = -10 µA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -10 mA I C = -50 mA I B = -1 mA I B = -5 mA -0.2 -0.5 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -10 mA I C = -50 mA I B = -1 mA I B = -5 mA -1 -1 V V DC Current Gain I C = -1 mA I C = -10 mA I C = -50 mA V CE = -5 V V CE = -5 V V CE = -5 V h FE ∗ 240 f = 1 KHz 40 200 100 400 MHz 6 pF hfe Small Signal Current Gain I C = -1 mA fT Transition Frequency I C = -10 mA V CE = -10 V f = 1 MHz Collector-Base Capacitance IE = 0 f = 1 MHz Noise Figure f = 1 KHz ∆F = 200 Hz R G = 1KΩ I C = -0.25 mA V CE = -5 V C CBO F ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 50 60 50 V CE = -10 V V CB = -10 V 5 dB STZT5401 SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 3/4 STZT5401 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4