STMICROELECTRONICS STB100NF03L-03-01

STB100NF03L-03 STP100NF03L-03
STB100NF03L-03-1
N-CHANNEL 30V - 0.0026 Ω -100A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
■
■
■
■
■
■
TYPE
VDSS
RDS(on)
ID
STB100NF03L-03
STP100NF03L-03
STB100NF03L-03-01
30 V
30 V
30 V
<0.0032 Ω
<0.0032 Ω
<0.0032 Ω
100 A
100 A
100 A
TYPICAL RDS(on) = 0.0026 Ω
LOW THRESHOLD DRIVE
100% AVALANCHE TESTED
LOGIC LEVEL DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
3
3
12
1
D2PAK
TO-263
(Suffix “T4”)
I2PAK
TO-262
(Suffix “-1”)
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Value
Unit
30
V
30
V
VGS
Gate- source Voltage
± 16
V
ID(1)
Drain Current (continuous) at TC = 25°C
100
A
ID(1)
Drain Current (continuous) at TC = 100°C
100
A
Drain Current (pulsed)
400
A
Total Dissipation at TC = 25°C
300
W
Derating Factor
Single Pulse Avalanche Energy
2
1.9
W/°C
J
-55 to 175
°C
IDM(•)
Ptot
EAS(2)
Tstg
Tj
Storage Temperature
Operating Junction Temperature
(•) Pulse width limited by safe operating area
(2) Starting T j = 25 oC, IAR = 50A, V DD = 50V
(1) Current Limited by Package
February 2003
.
1/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
V(BR)DSS
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
VGS = 4.5 V
ID = 50 A
ID = 50 A
Min.
Typ.
Max.
Unit
1
1.7
2.5
V
0.0026
0.0032
0.0032
0.0045
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/11
Parameter
Test Conditions
Min.
10
gfs (*)
Forward Transconductance
VDS >ID(on)xRDS(on)max ID=10 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V f = 1 MHz VGS = 0
S
6200
1720
300
pF
pF
pF
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Turn-on Time
Rise Time
ID = 50 A
VDD = 15 V
VGS = 4.5 V
RG = 4.7 Ω
(Resistive Load, Figure 3)
35
315
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 24V ID= 100A VGS = 5V
88
22.5
36
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
ID = 50 A
VDD = 20 V
VGS = 4.5 V
RG = 4.7Ω,
(Resistive Load, Figure 3)
115
95
ns
ns
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 24 V
ID = 100 A
VGS = 4.5 V
RG = 4.7Ω
(Inductive Load, Figure 5)
110
55
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 100 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/µs
ISD = 100 A
Tj = 150°C
VDD = 20 V
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
75
150
4
Max.
Unit
100
400
A
A
1.3
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
.
.
5/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
D2PAK MECHANICAL DATA
DIM.
mm.
MIN.
TYP.
inch.
MAX.
MIN.
TYP.
TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
10.4
0.394
D1
E
8
10
E1
G
0.315
8.5
0.409
0.334
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
8°
0°
R
V2
0.4
0°
0.015
8°
7/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
8/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP.
inch.
MAX.
MIN.
TYP.
TYP.
A
4.4
4.6
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
9/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
* on sales type
10/11
1.574
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0.795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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11/11