STMICROELECTRONICS STW150NF55

STB150NF55 STP150NF55
STW150NF55
N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
STB150NF55
STP150NF55
STP150NF55
■
■
VDSS
RDS(on)
ID
55 V
55 V
55 V
<0.006 Ω
<0.006 Ω
<0.006 Ω
120 A(**)
120 A(**)
120 A(**)
TYPICAL RDS(on) = 0.005 Ω
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
3
1
D2PAK
TO-263
(Suffix “T4”)
TO-247
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE
Ordering Information
SALES TYPE
STB150NF55T4
STP150NF55
STW150NF55
MARKING
B150NF55
P150NF55
W150NF55
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
VDGR
VGS
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
ID(**)
Drain Current (continuous) at TC = 100°C
ID
IDM(•)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
Peak Diode Recovery voltage slope
dv/dt (1)
EAS (2)
Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
October 2002
PACKAGE
D2PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
Value
55
55
± 20
120
106
480
300
2.0
8
850
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX
(2) Starting T j = 25 oC, ID = 60 A, VDD = 30V
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STB150NF55 STP150NF55 STW150NF55
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
V(BR)DSS
VGS = 0
Min.
Typ.
Max.
55
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
4
V
0.005
0.006
Ω
Typ.
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 60 A
Min.
Typ.
2
DYNAMIC
Symbol
2/14
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS = 15 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
ID = 60 A
Min.
160
S
4400
1050
350
pF
pF
pF
STB150NF55 STP150NF55 STW150NF55
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
ID = 60 A
VDD = 27.5 V
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
35
180
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=27.5 V I D=120A VGS= 10V
140
35
70
170
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
ID = 60 A
VDD = 27.5 V
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
140
80
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 120 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/µs
ISD = 120 A
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
130
350
7.5
Max.
Unit
120
480
A
A
1.5
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/14
STB150NF55 STP150NF55 STW150NF55
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/14
STB150NF55 STP150NF55 STW150NF55
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
Power
Derating vs Tc
.
Max
Id Current vs Tc.
5/14
STB150NF55 STP150NF55 STW150NF55
Thermal Resistance Rthj-a vs PCB Copper Area
Max Power Dissipation vs PCB Copper Area
Allowable Iav vs. Time in Avalanche
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To derate above 25 oC, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .
6/14
STB150NF55 STP150NF55 STW150NF55
SPICE THERMAL MODEL
Node
Value
CTHERM1
5-4
0.011
CTHERM2
4-3
0.0012
CTHERM3
3-2
0.05
CTHERM4
2-1
0.1
RTHERM1
5-4
0.09
RTHERM2
4-3
0.02
RTHERM3
3-2
0.11
RTHERM4
2-1
0.17
Parameter
7/14
STB150NF55 STP150NF55 STW150NF55
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 3.1: Inductive Load Switching and Diode Recovery Times Waveform
Fig. 4: Gate Charge Test Circuit
Fig. 4.1: Gate Charge Test Waveform
8/14
STB150NF55 STP150NF55 STW150NF55
Fig. 5: Unclamped Inductive Load Test Circuit
Fig. 5.1: Diode Recovery Times Waveform
9/14
STB150NF55 STP150NF55 STW150NF55
D2PAK MECHANICAL DATA
DIM.
mm.
MIN.
MAX.
MIN.
TYP.
TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
10.4
0.394
D1
E
8
10
E1
G
0.315
8.5
0.409
0.334
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
8°
0°
R
V2
10/14
TYP.
inch.
0.4
0°
0.015
8°
STB150NF55 STP150NF55 STW150NF55
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
11/14
STB150NF55 STP150NF55 STW150NF55
TO-220 MECHANICAL DATA
DIM.
12/14
mm.
MIN.
TYP.
inch.
MAX.
MIN.
TYP.
TYP.
A
4.4
4.6
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
STB150NF55 STP150NF55 STW150NF55
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
inch
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
MAX.
12.992
0.059
13.2
0.504
0.520
0.795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
1.574
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
* on sales type
13/14
STB150NF55 STP150NF55 STW150NF55
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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