STB60NF06L STP60NF06L N-CHANNEL 60V - 0.014 Ω - 60A D2PAK/TO-220 STripFET II POWER MOSFET TYPE STB60NF06L STP60NF06L ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 60 V 60 V <0.016 Ω <0.016 Ω 60 A 60 A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 175 oC OPERATING RANGE LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION 3 1 D2 PAK TO-263 (Suffix “T4”) 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ■ AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit 60 V 60 V ± 15 V ID Drain Current (continuous) at TC = 25°C 60 A ID Drain Current (continuous) at TC = 100°C 42 A IDM(•) Ptot Drain Current (pulsed) 240 A Total Dissipation at TC = 25°C 150 W Derating Factor 1.0 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns E AS (2) Single Pulse Avalanche Energy 320 mJ -55 to 175 °C Tstg Tj Storage Temperature Operating Junction Temperature (•) Pulse width limit ed by safe operating area. April 2002 . Value (1) ISD ≤ 60A, di/dt ≤ 600A/µs, VDD ≤ 48V, Tj ≤ TJMAX. (2) Starting Tj = 25 oC, ID = 30A, VDD = 30V 1/10 STB60NF06L STP60NF06L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ °C/W °C/W °C 1.0 62.5 300 ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C Gate-body Leakage Current (VDS = 0) VGS = ± 15V Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS I D = 250 µA R DS(on) Static Drain-source On Resistance VGS = 5 V VGS = 10 V I D = 30 A I D = 30 A Min. Typ. 1 V 0.014 0.012 0.016 0.014 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/10 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 30 A Min. 20 S 2000 360 125 pF pF pF STB60NF06L STP60NF06L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30 V I D = 30 A VGS = 4.5 V R G = 4.7 Ω (Resistive Load, Figure 3) 35 220 Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 60 A VGS= 4.5V 35 10 20 45 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 30V I D = 30 A VGS = 4.5 V RG = 4.7Ω, (Resistive Load, Figure 3) 55 30 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 60A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A di/dt = 100A/µs T j = 150°C VDD = 30 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 110 250 4.5 Max. Unit 60 240 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10 STB60NF06L STP60NF06L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STB60NF06L STP60NF06L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/10 STB60NF06L STP60NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STB60NF06L STP60NF06L D2PAK MECHANICAL DATA DIM. MIN. mm. TYP. MAX. MIN. inch. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 B 0.03 0.7 0.23 0.93 0.001 0.028 0.009 0.037 B2 C 1.14 0.45 1.7 0.6 0.045 0.018 0.067 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 D1 E 10 10.4 0.394 E1 G 8.5 4.88 5.28 8 0.315 0.409 0.334 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 M 1.4 2.4 1.75 3.2 0.055 0.094 0.069 0.126 R V2 0° 8° 0° 0.4 0.016 8° 7/10 STB60NF06L STP60NF06L TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 0.70 0.019 D1 TYP. 1.27 E MAX. 0.050 0.49 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/10 L4 P011C STB60NF06L STP60NF06L D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A inch MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 9/10 STB60NF06L STP60NF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express writt en approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http ://www.st.com 10/10