STB5NA80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B5NA80 ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 800 V < 2.4 Ω 4.7 A TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 3 12 I2PAK TO-262 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 1 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V DS Drain-source Voltage (V GS = 0) Parameter 800 V VDGR Drain- gate Voltage (R GS = 20 kΩ) 800 V V GS Gate-source Voltage ± 30 V o ID Drain Current (continuous) at T c = 25 C ID Drain Current (continuous) at T c = 100 C I DM (•) P t ot o Drain Current (pulsed) o Total Dissipation at T c = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction Temperature 4.7 A 3 A 19 A 125 W 1 W/ o C -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1996 1/10 STB5NA80 THERMAL DATA R t hj-ca se R t hj- amb R t hj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ o 1 62.5 0.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol Parameter Max Valu e Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 4.7 A E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 25 V) 110 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 4.5 mJ I AR Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by Tj max, δ < 1%) 3 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA V GS = 0 Min. Typ . Max. 800 Un it V I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C 250 1000 µA µA I GSS Gate-body Leakage Current (V DS = 0) V GS = ± 30 V ±100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA Min. Typ . Max. Un it 2.5 3 3.75 V 1.8 2.4 4.8 Ω Ω V GS(th) Gate T hreshold Voltage V DS = VGS R DS( on) Static Drain-source On Resistance V GS = 10 V V GS = 10 V ID(o n) On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V 4.7 Parameter Test Cond ition s Min. Typ . 2.7 5.2 I D = 2.5 A I D = 2.5 A T c = 100 oC A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/10 Forward Transconductance V DS > I D(on) x R DS(on) max I D = 2.5 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz 1250 140 35 Max. Un it S 1700 190 50 pF pF pF STB5NA80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Qg Q gs Q gd Typ . Max. Un it Turn-on T ime Rise Time Parameter V DD = 400 V I D = 2.5 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 3) Test Cond ition s 40 100 55 135 ns ns Turn-on Current Slope V DD = 640 V ID = 5 A R G = 47 Ω V GS = 10 V (see test circuit, figure 5) 180 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 55 8 24 75 nC nC nC Typ . Max. Un it 75 25 110 100 35 150 ns ns ns Typ . Max. Un it 4.7 19 A A 1.6 V ID = 5 A Min. V GS = 10 V A/µs SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s V DD = 640 V R G = 47 Ω Min. ID = 5 A V GS = 10 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward O n Voltage I SD = 4.7 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A V DD = 100 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o T j = 150 C 800 ns 15.2 µC 38 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/10 STB5NA80 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STB5NA80 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STB5NA80 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit 6/10 Fig. 2: Unclamped Inductive Waveform STB5NA80 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/10 STB5NA80 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B1 1.2 1.38 0.047 0.054 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 E 10 10.28 0.393 0.404 L 13.2 13.5 0.519 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.37 0.050 0.054 E e B B2 C2 A1 A C A L1 L2 8/10 MAX. D L STB5NA80 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 9 9.35 0.354 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.37 0.050 0.054 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G 9/10 STB5NA80 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 10/10