STW34NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STW 34NB20 ■ ■ ■ ■ ■ V DSS R DS(on) ID 200 V < 0.075 Ω 34 A TYPICAL RDS(on) = 0.062 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t Drain-source Voltage (V GS = 0) 200 V V DGR Drain- gate Voltage (R GS = 20 kΩ) 200 V V GS Gate-source Voltage ± 30 V V DS Parameter o ID Drain Current (continuous) at Tc = 25 C 34 A ID Drain Current (continuous) at Tc = 100 oC 21 A 136 A Total Dissipation at Tc = 25 C 180 W Derating F actor 1.44 W/ o C IDM (•) P t ot T stg Tj Drain Current (pulsed) o Storage T emperature Max. O perating Junction Temperature (•) Pulse width limited by safe operating area January 1998 -65 to 150 o C 150 o C (1) ISD ≤34A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/8 STW34NB20 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 0.69 30 0.1 300 C/W oC/W o C/W o C Max Valu e Unit 34 A 650 mJ AVALANCHE CHARACTERISTICS Symb ol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating I GSS Gate-body Leakage Current (V DS = 0) Typ . Max. 200 V GS = 0 I DSS Min. Un it V T c = 125 oC V GS = ± 30 V 1 10 µA µA ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate Threshold Voltage R DS( on) Static Drain-source On V GS = 10V Resistance ID(o n) V DS = VGS Min. Typ . Max. Un it 3 4 5 V 0.062 0.075 Ω ID =17 A 34 On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/8 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D = 17 A VGS = 0 Min. Typ . 8 17 2400 650 90 Max. Un it S 3300 900 130 pF pF pF STW34NB20 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Typ . Max. Un it t d(on) tr Turn-on Time Rise Time Parameter V DD = 100 V I D = 17 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 3) Test Cond ition s Min. 30 40 40 55 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 160 V 60 19 29 80 nC nC nC Typ . Max. Un it 17 18 35 23 24 47 ns ns ns Typ . Max. Un it 34 136 A A 1.5 V 290 ns 2.7 µC 18.5 A I D =34 A V GS = 10 V SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s Min. V DD = 160 V I D = 34 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 34 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 34 A di/dt = 100 A/µs o Tj = 150 C V DD = 50 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STW34NB20 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STW34NB20 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW34NB20 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW34NB20 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 7/8 STW34NB20 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 8/8