STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS( on) ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TO-247 3 2 1 3 3 2 2 1 TO-218 ISOWATT218 1 ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STH/STW60N10 VD S V DG R V GS Unit STH60N10FI Drain-source Voltage (V GS = 0) 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V ± 20 Gate-source Voltage V ID Drain Current (continuous) at T c = 25 oC 60 36 A ID Drain Current (continuous) at T c = 100 oC 42 22 A Drain Current (pulsed) 240 240 A ID M(•) P tot V ISO T stg Tj o Total Dissipation at Tc = 25 C 200 70 W Derating Factor 1.33 0.56 W/o C 4000 Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -65 to 175 175 V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area May 1993 1/11 STH60N10/FI STW60N10 THERMAL DATA TO-218/TO-247 ISOWATT218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max o C/W 30 0.1 300 o C/W C/W o C Max Value Unit 0.75 1.79 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 60 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 720 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 180 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 37 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Min. VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Typ. Max. 100 Unit V T c = 125 oC V GS = ± 20 V 250 1000 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions ID = 250 µA V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10 V I D = 30 A V GS = 10 V ID = 30 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2 2.9 4 V 0.02 0.025 0.05 Ω Ω T c = 100 o C 60 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/11 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 30 A VG S = 0 Min. Typ. 25 35 4000 1100 250 Max. Unit S 5000 1400 350 pF pF pF STH60N10/FI STW60N10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 80 V ID = 30 A VGS = 10 V R G = 50 Ω (see test circuit, figure 3) Test Conditions 90 270 130 380 ns ns Turn-on Current Slope V DD = 80 V ID = 60 A R G = 50 Ω VGS = 10 V (see test circuit, figure 5) 270 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V 120 16 60 170 nC nC nC Typ. Max. Unit 200 210 410 280 290 570 ns ns ns Typ. Max. Unit 60 240 A A ID = 30 A Min. V GS = 10 V A/µs SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 80 V ID = 60 A R G = 50 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 60 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A di/dt = 100 A/µs T j = 150 o C V DD = 30 V (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 1.6 V 180 ns 1 µC 11 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218 3/11 STH60N10/FI STW60N10 Thermal Impedeance For TO-218 and TO-247 Thermal Impedance For ISOWATT218 Derating Curve For TO-218 and TO-247 Derating Curve For ISOWATT218 Output Characteristics Transfer Characteristics 4/11 STH60N10/FI STW60N10 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/11 STH60N10/FI STW60N10 Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/11 STH60N10/FI STW60N10 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/11 STH60N10/FI STW60N10 TO-247 MECHANICAL DATA mm DIM. MIN. A TYP. 4.7 A1 inch MAX. MIN. 5.3 0.185 TYP. MAX. 0.208 2.87 0.113 A2 1.5 2.5 0.059 0.098 b 1 1.4 0.039 0.055 b1 2.25 0.088 b2 3.05 3.43 0.120 0.135 C 0.4 0.8 0.015 0.031 D 20.4 21.18 0.803 0.833 e 5.43 5.47 0.213 0.215 E 15.3 15.95 0.602 0.628 L 15.57 L1 3.7 4.3 0.145 0.169 Q 5.3 5.84 0.208 0.230 ØP 3.5 3.71 0.137 0.146 A2 A1 A C 0.613 D b L1 b1 Q L b2 E e ø 8/11 STH60N10/FI STW60N10 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F Ø R 1 2 3 P025A 9/11 STH60N10/FI STW60N10 ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. 0.222 MAX. C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.45 1 0.017 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 10/11 P025C STH60N10/FI STW60N10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11